IQE020N04LM6CGATMA1 vs IQE012N03LM5CGSCATMA1 对比
详细并排对比 IQE020N04LM6CGATMA1 出自 Infineon 和 IQE012N03LM5CGSCATMA1 出自 Infineon。对比关键规格、电气参数、封装、生命周期状态、价格和供货情况，以确定最适合您设计需求的元器件。
规格对比
| 参数 | IQE020N04LM6CGATMA1 | IQE012N03LM5CGSCATMA1 |
|---|---|---|
| 品牌 | Infineon | Infineon |
| 分类 | MOSFETs | MOSFETs |
| 生命周期状态 | 有效 | 有效 |
| 库存状态 | 有库存 | 有库存 |
| 单价（USD） | $1.75 | $1.55 |
| Manufacturer | Infineon Technologies | — |
| Series | OptiMOS 6 | — |
| 晶体管类型 | N-Channel MOSFET | — |
| Drain-Source Voltage (VDS) | 40 V | 30 V |
| Continuous Drain Current (ID) at TA=25°C | 25 A | — |
| Continuous Drain Current (ID) at TC=25°C | 166 A | — |
| Power Dissipation (PD) at TA=25°C | 2.5 W | — |
| Power Dissipation (PD) at TC=25°C | 107 W | — |
| On-State Resistance (RDS(on)) typical @ VGS=10V | 2.0 mΩ | — |
| Gate-Source Threshold Voltage (VGS(th)) | [DATA_NEEDED: VGS(th) value] | — |
| Gate Charge (Qg) typical | [DATA_NEEDED: Qg value] | — |
| 封装 | PG-TTFN-9-3 (PQFN 3.3x3.3, source-down center-gate) | PG-WHTFN-9-1 (PQFN 3.3 × 3.3 mm Source-Down dual-side cooled) |
| 安装类型 | Surface Mount | Surface Mount |
| 工作温度范围 | -55°C to +150°C | — |
| Technology | OptiMOS 6, TrenchFET-class | OptiMOS 5 (trench MOSFET) |
| Configuration | Single N-Channel, source-down | — |
| RoHS 状态 | Compliant | Compliant |
| MSL 等级 | MSL1 (per JEDEC J-STD-020) | 1 (per JEDEC J-STD-020, floor life unlimited) |
| FET Type | — | N-Channel |
| Continuous Drain Current (ID) @ Ta | — | 34 A |
| Continuous Drain Current (ID) @ Tc | — | 224 A |
| Maximum RDS(on) @ VGS=10V | — | 1.15 mΩ |
| Power Dissipation (Ta) | — | 2.5 W |
| Power Dissipation (Tc) | — | 107 W |
| Gate Threshold Voltage (VGS(th)) | — | 2 V (typ, per Merlin listing) |
| 工作结温 | — | -55 °C to +175 °C |
| Lead-Free | — | Yes |