IQE020N04LM6CGATMA1 vs IQE012N03LM5CGSCATMA1 Vergleich

Detaillierter Direktvergleich von IQE020N04LM6CGATMA1 von Infineon und IQE012N03LM5CGSCATMA1 von Infineon. Vergleichen Sie die wichtigsten Spezifikationen, elektrischen Parameter, Gehäuse, Lebenszyklusstatus, Preise und Verfügbarkeit, um das beste Bauteil für Ihre Designanforderungen zu ermitteln.

Infineon
IQE020N04LM6CGATMA1 IQE020N04LM6CGATMA1 - 40V 2.0mΩ OptiMOS 6 MOSFET | Infineon

IQE020N04LM6CGATMA1 - 40V 2.0mΩ OptiMOS 6 MOSFET | Infineon

IQE020N04LM6CGATMA1 ✓ Aktiv
Infineon
IQE012N03LM5CGSCATMA1 IQE012N03LM5CGSCATMA1 - 30V 1.15mΩ OptiMOS 5 MOSFET | Infineon

IQE012N03LM5CGSCATMA1 - 30V 1.15mΩ OptiMOS 5 MOSFET | Infineon

IQE012N03LM5CGSCATMA1 ✓ Aktiv

Spezifikationsvergleich

Parameter IQE020N04LM6CGATMA1 IQE012N03LM5CGSCATMA1
Marke Infineon Infineon
Kategorie MOSFETs MOSFETs
Lebenszyklusstatus Aktiv Aktiv
Lagerstatus In Stock In Stock
Stückpreis (USD) $1,75 $1,55
Manufacturer Infineon Technologies —
Series OptiMOS 6 —
Transistortyp N-Channel MOSFET —
Drain-Source Voltage (VDS) 40 V 30 V
Continuous Drain Current (ID) at TA=25°C 25 A —
Continuous Drain Current (ID) at TC=25°C 166 A —
Power Dissipation (PD) at TA=25°C 2.5 W —
Power Dissipation (PD) at TC=25°C 107 W —
On-State Resistance (RDS(on)) typical @ VGS=10V 2.0 mΩ —
Gate-Source Threshold Voltage (VGS(th)) [DATA_NEEDED: VGS(th) value] —
Gate Charge (Qg) typical [DATA_NEEDED: Qg value] —
Gehäuse PG-TTFN-9-3 (PQFN 3.3x3.3, source-down center-gate) PG-WHTFN-9-1 (PQFN 3.3 × 3.3 mm Source-Down dual-side cooled)
Montageart Surface Mount Surface Mount
Betriebstemperaturbereich -55°C to +150°C —
Technology OptiMOS 6, TrenchFET-class OptiMOS 5 (trench MOSFET)
Configuration Single N-Channel, source-down —
RoHS-Status Compliant Compliant
MSL-Level MSL1 (per JEDEC J-STD-020) 1 (per JEDEC J-STD-020, floor life unlimited)
FET Type — N-Channel
Continuous Drain Current (ID) @ Ta — 34 A
Continuous Drain Current (ID) @ Tc — 224 A
Maximum RDS(on) @ VGS=10V — 1.15 mΩ
Power Dissipation (Ta) — 2.5 W
Power Dissipation (Tc) — 107 W
Gate Threshold Voltage (VGS(th)) — 2 V (typ, per Merlin listing)
Betriebs-Sperrschichttemperatur — -55 °C to +175 °C
Lead-Free — Yes

Datenblätter & Ressourcen

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