IQE020N04LM6CGATMA1 vs ISC016N08NM8ATMA1 Ikinahambing
Detalyadong pagkakahiwalay na pagkakahambing ng IQE020N04LM6CGATMA1 sa pamamagitan ng Infineon at ISC016N08NM8ATMA1 sa pamamagitan ng Infineon. Ikinahambing ang mga pangunahing paglalarawan, mga tama ng elektriko, paakay, kalagayan ng buhay, presyo, at pagkakaroon upang makita ang pinakamahusay na komponente para sa iyong mga kinakailangang pang disenyo.
Infineon
IQE020N04LM6CGATMA1 - 40V 2.0mΩ OptiMOS 6 MOSFET | Infineon
IQE020N04LM6CGATMA1 ✓ Nakahanda
Pagsanggunian na paghahambing
| Parametro | IQE020N04LM6CGATMA1 | ISC016N08NM8ATMA1 |
|---|---|---|
| Brand | Infineon | Infineon |
| Kategorya | MOSFETs | MOSFETs |
| Katayuan ng Lifecycle | Aktibo | Aktibo |
| Manufacturer | Infineon Technologies | Infineon Technologies |
| Series | OptiMOS 6 | — |
| Uri ng Transistor | N-Channel MOSFET | — |
| Drain-Source Voltage (VDS) | 40 V | — |
| Continuous Drain Current (ID) at TA=25°C | 25 A | — |
| Continuous Drain Current (ID) at TC=25°C | 166 A | — |
| Power Dissipation (PD) at TA=25°C | 2.5 W | — |
| Power Dissipation (PD) at TC=25°C | 107 W | — |
| On-State Resistance (RDS(on)) typical @ VGS=10V | 2.0 mΩ | — |
| Gate-Source Threshold Voltage (VGS(th)) | [DATA_NEEDED: VGS(th) value] | — |
| Gate Charge (Qg) typical | [DATA_NEEDED: Qg value] | — |
| Packhaging | PG-TTFN-9-3 (PQFN 3.3x3.3, source-down center-gate) | SuperSO8 / PG-TDSON-8 (5.0 x 6.0 mm) |
| Uri ng Pagpapasok | Surface Mount | Surface Mount |
| Hanay ng Temperature na Operasyon | -55°C to +150°C | -55 C to +150 C (junction) |
| Technology | OptiMOS 6, TrenchFET-class | Trench-gate OptiMOS 8 (silicon) |
| Configuration | Single N-Channel, source-down | — |
| Tindminan RoHS | Compliant | Compliant |
| Level ng MSL | MSL1 (per JEDEC J-STD-020) | 1 (per JEDEC J-STD-020E classification for SuperSO8) |
| Product Series | — | OptiMOS 8 |
| Channel Type | — | N-Channel |
| Drain-Source Voltage (VDS max) | — | 80 V |
| Gate-Source Voltage (VGS max) | — | +/-20 V (typical rating) |
| Continuous Drain Current (ID) at Ta | — | 29 A |
| Continuous Drain Current (ID) at Tc | — | [DATA_NEEDED: pulsed/continuous current rating at Tc] |
| Pulsed Drain Current (IDM) at Tc | — | 268 A |
| Power Dissipation (PD) at Ta | — | 3 W |
| Power Dissipation (PD) at Tc | — | 263 W |
| On-State Resistance RDS(on) typ @ VGS=10V | — | 1.6 mOhm |
| Gate Threshold Voltage VGS(th) typ | — | [DATA_NEEDED: gate threshold voltage] |
| Total Gate Charge Qg typ | — | [DATA_NEEDED: total gate charge] |
| Lead-Free / Halogen-Free | — | Lead-free (per Infineon product page) |