IQE012N03LM5CGATMA1 - 30V 224A OptiMOS 5 N-FET | Infineon
MPN: IQE012N03LM5CGATMA1 ✓ Active| Qty | Unit Price | Extended |
|---|---|---|
| 1 | $2.63 | $2.63 |
| 10 | $2.37 | $23.70 |
| 100 | $2.1 | $210.00 |
| 500 | $1.84 | $920.00 |
| 1,000 | $1.61 | $1,610.00 |
| 5,000 | $1.38 | $6,900.00 |
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View Datasheet →IQE012N03LM5CGATMA1 Maximum Ratings & Electrical Characteristics
| FET Type | N-Channel |
| Drain-Source Voltage (VDS) | 30 V |
| Continuous Drain Current (ID, Ta) | 34 A |
| Pulsed Drain Current (IDM, Tc) | 224 A |
| On-Resistance RDS(on), typ | 1.20 mOhm |
| Gate-Source Threshold VGS(th) | 1.0 V to 2.4 V (typ, OptiMOS 5 logic-level) |
| Power Dissipation (Ta) | 2.5 W |
| Power Dissipation (Tc) | 107 W |
| Technology / Process | OptiMOS 5 trench |
| Package | PG-TTFN-9-3 (PQFN 3.3x3.3 Source-Down, center-gate) |
| Mounting Type | Surface Mount |
| Operating Temperature | -55 C to +150 C (TJ) |
| Gate Drive (recommended) | 10 V (logic-level compatible) |
| RoHS Status | Compliant |
| MSL Level | 1 |
IQE012N03LM5CGATMA1 Pin Configuration
| Pin 1 | Gate — Gate drive input, VGS=10 V recommended for full RDS(on) |
| Pin 2 | Source — Source connection, internally bonded to thermal pad |
| Pin 3 | Source — Source connection, internally bonded to thermal pad |
| Pin 4 | KS (Kelvin Source) — Kelvin source return for gate drive; isolate from main source current path |
| Pin 5 | Source — Source connection (drain on opposite face in Source-Down) |
| Pin 6 | Source — Source connection |
| Pin 7 | Source — Source connection |
| Pin 8 | Source — Source connection |
| Pin 9 | Source — Source connection |
Safe Operating Area - IQE012N03LM5CGATMA1
Typical Applications
IQE012N03LM5CGATMA1 is suitable for 7 applications: 12V POL Synchronous Rectifier, USB-PD VBUS Hot-Swap / Source Switch, 24V Telecom Hot-Swap / OR-ing, Low-Voltage BLDC Motor Drive H-Bridge, 1S-3S Battery Pack Protection FET, Industrial High-Side Load Switch, AI Accelerator Card Power Stage.
12V POL Synchronous Rectifier
The IQE012N03LM5CGATMA1's 1.20 mOhm RDS(on) at VGS=10 V and 34 A continuous drain current make it a strong synchronous-rectifier candidate for 12 V input point-of-load buck converters powering CPUs, GPUs and ASICs. At 25 A the conduction loss is approximately 0.75 W, and the Source-Down PQFN 3.3x3.3 keeps the high-side/low-side loop inductance low for clean switching transitions. Use 10 V gate drive to fully enhance the cell; pair with a gate driver such as the IR2104STRPBF or 2EDN7524GXTMA1 to avoid shoot-through.
Recommended
USB-PD VBUS Hot-Swap / Source Switch
In USB-PD Type-C source paths, the IQE012N03LM5CGATMA1 acts as the VBUS load switch controlling 5 V / 9 V / 15 V / 20 V PDOs up to 5 A. The 30 V VDS rating covers the highest 20 V PDO with margin, and 1.20 mOhm RDS(on) holds conduction loss under 30 mW at 5 A. The Source-Down package enables a tight thermal pad under the source current path so the connector area can deliver full 100 W without exceeding 80 C Tj. Add TVS protection at VBUS for surge compliance.
Recommended
24V Telecom Hot-Swap / OR-ing
The IQE012N03LM5CGATMA1 suits 24 V telecom board hot-swap and OR-ing diodes in -48 V ground-referenced systems when sized for the positive return path. Its 30 V VDS provides headroom for transient ringing on 24 V distribution rails, and the 224 A pulsed rating handles inrush with adequate margin. The Source-Down footprint simplifies symmetrical PCB layout when used with a paralleled second FET. Add an Infineon gate driver such as IRS2004STRPBF for controlled dV/dt turn-on.
Recommended
Low-Voltage BLDC Motor Drive H-Bridge
For 12 V to 24 V BLDC pumps, fans and small industrial drives, the IQE012N03LM5CGATMA1 functions as the low-side or high-side switch in a 4-FET H-bridge. The 1.20 mOhm RDS(on) keeps per-FET conduction loss under 1 W at 25 A continuous, and the 3.3x3.3 PQFN footprint lets designers parallel two FETs per leg for higher current without expanding board area. Use a gate driver such as IRS21834STRPBF or 2ED21844S06JXUMA1 for bootstrap high-side drive at 24 V bus.
Recommended
1S-3S Battery Pack Protection FET
The IQE012N03LM5CGATMA1 is well suited as the protection MOSFET for 1-series to 3-series lithium-ion battery packs in power tools, e-bikes and portable medical devices. The 30 V VDS comfortably exceeds the maximum 3s pack voltage of 12.6 V, and 1.20 mOhm RDS(on) ensures minimal voltage drop during high-current discharge (10 A gives 120 mV drop). Its 3.3x3.3 mm PQFN enables compact BMS layouts. Choose the IAUC suffix for AEC-Q101 / automotive-grade variants.
Recommended
Industrial High-Side Load Switch
In industrial PLC and factory-automation loads, the IQE012N03LM5CGATMA1 implements a high-side load switch on 24 V rails with P-channel replacement performance at N-channel cost. Drive the gate with a bootstrap or charge-pump circuit (such as the BTS3118N or a discrete gate driver) to fully enhance the FET for lowest RDS(on). The 224 A pulsed rating provides ample inrush margin for capacitive and inductive loads at turn-on, and the Source-Down footprint eases heatsinking on FR4.
Recommended
AI Accelerator Card Power Stage
The IQE012N03LM5CGATMA1 can be used as a synchronous rectifier in 12 V input AI-accelerator VRMs where multiple paralleled 3.3x3.3 FETs share current to reduce conduction loss. The Source-Down architecture lowers switching loop inductance, suppressing ringing and EMI on the high-di/dt gate transitions. Each device carrying 20 A to 25 A continuous, two paralleled FETs achieve the 40 A to 50 A per phase typical of GPU/CPU VRMs with adequate thermal margin.
Recommended
Recommended Products Summary
Engineering reference data for IQE012N03LM5CGATMA1 — comparison, design guidance, and compliance information.
Selection Guide
Comparison with Alternatives
| Parameter | This Product | IQE012N03LM5CGSCATMA1 | IQE008N03LM5SCATMA1 | IQE013N04LM6ATMA1 | IQEH50NE2LM7UCGSCATMA1 | BSC019N08NS5ATMA1 |
|---|---|---|---|---|---|---|
| Brand | Infineon Technologies | Infineon Technologies | Infineon Technologies | Infineon Technologies | Infineon Technologies | Infineon Technologies |
| Package | PQFN 3.3x3.3 (PG-TTFN-9-3, Source-Down) | PQFN 3.3x3.3 (Source-Down) | PQFN 3.3x3.3 (Source-Down) | PQFN 3.3x3.3 (Source-Down) | PQFN 3.3x3.3 (Source-Down) | PQFN 3.3x3.3 (Source-Down class) |
| VDS max | 30 V | 30 V | 30 V | 40 V | 30 V | 80 V |
| Continuous ID (Ta) | 34 A | 34 A | [DATA_NEEDED] | [DATA_NEEDED] | [DATA_NEEDED] | [DATA_NEEDED] |
| RDS(on) typ | 1.20 mOhm at VGS=10 V | 1.20 mOhm at VGS=10 V | ~0.8 mOhm class (-33%) | 1.3 mOhm class (+8%) | lower mOhm class | 1.9 mOhm class (+58%) |
| Pulsed ID (Tc) | 224 A | 224 A | [DATA_NEEDED] | [DATA_NEEDED] | [DATA_NEEDED] | [DATA_NEEDED] |
| Power Dissipation (Tc) | 107 W | 107 W | [DATA_NEEDED] | [DATA_NEEDED] | [DATA_NEEDED] | [DATA_NEEDED] |
| Technology | OptiMOS 5 trench | OptiMOS 5 trench | OptiMOS 5 trench | OptiMOS 6 | OptiMOS 7 | OptiMOS 5 |
| Reference Unit Price (qty 1) | $2.63 | $2.63 (same die) | [DATA_NEEDED] | [DATA_NEEDED] | [DATA_NEEDED] | [DATA_NEEDED] |
Key Differentiators
- Ultra-low 1.20 mOhm RDS(on) in 3.3x3.3 Source-Down PQFN (vs BSC019N08NS5ATMA1 (Infineon 80 V OptiMOS 5, 1.9 mOhm))
- Source-Down package architecture halves source inductance (vs Conventional drain-down PQFN 3.3x3.3 (e.g., BSC0502NSIATMA1))
- Infineon OptiMOS 5 platform with full distributor stock (vs Cross-brand 30 V PQFN 3.3x3.3 Source-Down equivalents from Vishay or Renesas)
Design Notes
Estimated: at 25 A continuous conduction with RDS(on)=1.20 mOhm and Tj=100 C, conduction loss is roughly P=I^2*R = 25*25*0.0018 = ~1.1 W (RDS(on) derated ~1.5x at 100 C). On the Infineon reference PCB (FR4 40x40x1.5 mm, 6 cm2 copper) this keeps Tj well below 150 C. On smaller PCBs (1 cm2 copper) the part derates to roughly half the continuous current - use the SOA chart and thermal impedance curves in the datasheet.
The Source-Down package requires the bottom thermal pad to be electrically tied to the source and to the system ground plane. Use a continuous ground copper pour under the pad, with multiple thermal vias (at least 9 x 0.3 mm) stitching the top pad to inner ground planes. Keep the high-side and low-side switching loop area as small as possible to leverage the Source-Down inductance advantage - typical layouts show a 50 percent reduction in voltage overshoot at the switch node.
Drive VGS to 10 V, not 4.5 V, to achieve full RDS(on) - OptiMOS 5 logic-level VGS(th) is 1.0-2.4 V typical, but the curve flattens only above 8 V. Also, never tie the Kelvin Source pin (pin 4) to the same PCB trace as the main source current - this defeats its purpose and reintroduces source-bond voltage drop into the gate drive loop. Do not exceed 30 V VDS transients; even brief ringing above 30 V can permanently damage the device.
Use a dedicated gate driver (such as IR2104STRPBF, 2EDN7524GXTMA1, or IRS2004STRPBF) capable of sourcing and sinking 1 A to 2 A peak current to achieve fast switching transitions. Slow gate edges convert switching loss into heat and can trigger dv/dt-induced turn-on of the complementary FET in a half-bridge. Place a 10 Ohm gate resistor in series to dampen ringing; value depends on the gate driver and PCB layout parasitics.
Compliance Information
Commercial-grade OptiMOS 5 part. For AEC-Q101 automotive qualification choose an IAUC-suffix variant. RoHS and lead-free per Infineon product page. REACH compliance assumed per EU regulations; conflict minerals declaration per Infineon CMRT.
