IQE031N08LM6CGSCATMA1 - 80V OptiMOS 6 N-Ch MOSFET 127A | Infineon
MPN: IQE031N08LM6CGSCATMA1 ✓ Active| Qty | Unit Price | Extended |
|---|---|---|
| 1 | $1.85 | $1.85 |
| 10 | $1.62 | $16.20 |
| 100 | $1.34 | $134.00 |
| 500 | $1.08 | $540.00 |
| 1,000 | $0.89 | $890.00 |
| 5,000 | $0.74 | $3,700.00 |
IQE031N08LM6CGSCATMA1 Overview
A power MOSFET is a voltage-controlled three-terminal semiconductor switch used to commutate current in switching power supplies, motor drives, and load management circuits. Within the power-management hierarchy, a MOSFET sits below DC-DC converter and buck/boost controller ICs as the low-side or high-side synchronous switch. The OptiMOS 6 generation represents Infineon's latest 40 V to 100 V trench technology, designed to minimize conduction losses (RDS(on)) and switching losses (Qg, Qgd) simultaneously to maximize light-load and full-load efficiency in telecom 48 V and server 12 V rails.
Key features include very low on-state resistance per die area, integrated gate protection against ESD, and logic-level gate drive compatibility (VGS(th) in the 1 V to 2.5 V region) that allows direct PWM drive from standard 3.3 V or 5 V controller outputs without an external gate-driver stage. The Source-Down package brings the source potential to the bottom thermal pad, doubling the effective cooling surface against the PCB copper pour and lowering thermal resistance junction-to-board. The Center-Gate pinout simplifies paralleling of multiple devices by equalizing gate-loop inductance.
Typical applications include synchronous rectification on the secondary side of isolated DC-DC converters, hot-swap and OR-ing controllers on 48 V telecom boards, low-side switches in buck converters for server VRMs, and battery protection in 12 V/24 V e-mobility and industrial systems. The 80 V rating provides ample margin above 48 V nominal rails and supports transient 60 V surge conditions common in PoE and automotive 12 V systems.
Designers should observe the drain-to-source avalanche rating and consult Diagram 2 in the manufacturer datasheet for thermal derating above 25 C. Because this is a Source-Down device, the PCB land pattern and thermal via array must be designed specifically for the WHTFN-9 DSC footprint - do not reuse a standard PQFN-9 land pattern.
This page synthesizes Infineon distributor pricing, drop-in OptiMOS 6 cross-references, and Source-Down PCB layout guidance not aggregated on the manufacturer's product page.
Drop-in alternatives for IQE031N08LM6CGSCATMA1 — same package, pin-to-pin compatible. Different-package parts requiring PCB rework are excluded.
Variants in this series
Same-series models that are drop-in compatible with IQE031N08LM6CGSCATMA1 (same form factor and footprint) — differing in Package, Technology, Operating Temperature Range, MSL Level, Power Dissipation (Tc).
Quick Comparison Tool — Select alternative parts for side-by-side comparison:
IQE036N08NM6CGATMA1
✅ Drop-In✓ In Stock
$0.82 / Unit
View Datasheet →IQE050N08NM5CGATMA1
✅ Drop-In✓ In Stock
$1.75 / Unit
View Datasheet →IQE018N06NM6CGATMA1
✅ Drop-In✓ In Stock
$1.21 / Unit
View Datasheet →IQE012N03LM5CGATMA1
✅ Drop-In✓ In Stock
$1.38 / Unit
View Datasheet →IQEH50NE2LM7ZCGATMA1
✅ Drop-In✓ In Stock
$1.42 / Unit
View Datasheet →IQDH88N06LM5CGSCATMA1
✅ Drop-In✓ In Stock
$2.31 / Unit
View Datasheet →ISC151N08NM6ATMA1
✅ Drop-In✓ In Stock
$0.78 / Unit
View Datasheet →IQE031N08LM6CGSCATMA1 Maximum Ratings & Electrical Characteristics
| Manufacturer | Infineon Technologies |
| Product Family | OptiMOS 6 (40 V to 100 V) |
| Polarity / Channel Type | N-Channel |
| Drain-to-Source Voltage (VDS max) | 80 V |
| Continuous Drain Current (ID) at Ta=25C | 18 A |
| Continuous Drain Current (ID) at Tc | 127 A |
| Power Dissipation (PD) at Ta=25C | 2.5 W |
| Power Dissipation (PD) at Tc | 125 W |
| Gate Drive Level | Logic-level |
| Package | PG-WHTFN-9 (PQFN 3.3x3.3 Source-Down Center-Gate) |
| Mounting Type | Surface Mount |
| Operating Temperature Range | -55 C to +175 C (junction, typical for OptiMOS 6) |
| Avalanche Tested | 100% avalanche tested |
| MSL Level | 1 (per JEDEC J-STD-020, typical for Infineon PQFN) |
| RoHS Status | Compliant |
| Lead-Free | Yes |
IQE031N08LM6CGSCATMA1 Pin Configuration
| Pin 1 | Source — Source connection (top-side pad, also tied to bottom thermal pad) |
| Pin 2 | Source — Source connection (top-side pad) |
| Pin 3 | Source — Source connection (top-side pad) |
| Pin 4 | Gate — Gate connection (center pad on top side) |
| Pin 5 | Source — Source connection (top-side pad) |
| Pin 6 | Source — Source connection (top-side pad) |
| Pin 7 | Source — Source connection (top-side pad) |
| Pin 8 | Drain — Drain connection (side lead) |
| Pin 9 | Source (thermal pad) — Bottom thermal pad - electrically Source, primary heat path to PCB |
Safe Operating Area (DC, TC=25C, Source-Down PQFN 3.3x3.3, 6cm2 drain copper)
Typical Applications
IQE031N08LM6CGSCATMA1 is suitable for 6 applications: 48 V Telecom Isolated DC-DC Synchronous Rectifier, Server and Datacenter 12 V VRM Buck Switch, Hot-Swap and OR-ing Controller Switch (48 V Telecom Bus), 24 V Industrial Brushless DC Motor Drive (Low-Side Switch), 12 V/24 V eMobility Battery Management Load Switch, USB Power Delivery and PoE High-Side Switch.
48 V Telecom Isolated DC-DC Synchronous Rectifier
The IQE031N08LM6CGSCATMA1 is positioned as the secondary-side synchronous rectifier in isolated 48 V input DC-DC bricks used in telecom rectifiers and Power-over-Ethernet midspans. The 80 V VDS rating provides a 30 V margin above the 48 V nominal rail plus transformer leakage ringing, and the 100% avalanche-tested trench cell absorbs leakage energy without parametric shift. With 18 A continuous at 25 C ambient and 127 A at case temperature, the device handles the 10 A to 30 A typical secondary current of quarter-brick and eighth-brick modules. The Source-Down PQFN 3.3x3.3 package channels heat through the bottom source pad into the PCB copper pour, lowering thermal resistance below that of a standard PQFN - critical when two FETs share one footprint on the secondary side.
Recommended
Server and Datacenter 12 V VRM Buck Switch
In server voltage-regulator modules stepping down 12 V to 0.8 V to 1.8 V for CPUs and DDR memory, the IQE031N08LM6CGSCATMA1 serves as the low-side synchronous switch. The 80 V VDS is far above the 12 V bus so there is no VDS concern, but the Source-Down package's low thermal resistance allows the FET to be placed very close to the output inductor, shrinking the high-current loop and reducing switching losses. Logic-level gate drive lets the controller's 3.3 V or 5 V PWM directly drive the gate without an external gate-driver stage, saving PCB area and BOM cost.
Recommended
Hot-Swap and OR-ing Controller Switch (48 V Telecom Bus)
The IQE031N08LM6CGSCATMA1 can be used as the switching element in -48 V telecom hot-swap and OR-ing circuits, where it must withstand full bus voltage during inrush and back-feed events. The 80 V VDS provides comfortable margin above the 48 V nominal and the 60 V transient spec, and the 100% avalanche rating ensures the device survives inductive kickback when the load is disconnected. Logic-level gate drive allows the hot-swap controller IC to drive the FET directly, simplifying the analog front-end.
Recommended
24 V Industrial Brushless DC Motor Drive (Low-Side Switch)
In 24 V industrial BLDC drives and stepper motor drivers, the IQE031N08LM6CGSCATMA1 acts as a low-side phase switch driven from a 3-phase gate-driver IC. The 80 V VDS handles 24 V bus plus back-EMF transients from the motor windings, and the Source-Down package's low Rth_JA keeps junction temperature low during the high duty-cycle phase commutation typical of field-oriented control. Logic-level gate drive ensures direct compatibility with 3.3 V DSP/MCU outputs.
Recommended
12 V/24 V eMobility Battery Management Load Switch
In 12 V and 24 V e-mobility applications such as e-bike, e-scooter, and light-electric-vehicle battery management systems, the IQE031N08LM6CGSCATMA1 serves as a load-disconnect or pre-charge switch. The 80 V VDS easily exceeds the 24 V nominal battery voltage and the 36 V transient seen during regen braking. The Source-Down package delivers low thermal resistance, which is critical when the switch must carry continuous 18 A to 30 A currents during motor torque pulses.
Recommended
USB Power Delivery and PoE High-Side Switch
USB Power Delivery (USB-PD) and Power-over-Ethernet (PoE) load switches need a high-side or low-side FET that can handle 20 V to 60 V transients while minimizing conduction loss. The IQE031N08LM6CGSCATMA1 fits as the protection switch in PoE PD (powered device) front-ends, where the 80 V VDS withstands the 60 V PoE Type 4 transient overvolt events. The Source-Down package simplifies thermal layout in the compact USB-PD dongle form factor.
Recommended
Recommended Products Summary
Engineering reference data for IQE031N08LM6CGSCATMA1 — comparison, design guidance, and compliance information.
Selection Guide
Comparison with Alternatives
| Parameter | This Product | IQE036N08NM6CGATMA1 | IQE050N08NM5CGATMA1 | IQE018N06NM6CGATMA1 | IQEH50NE2LM7ZCGATMA1 |
|---|---|---|---|---|---|
| Brand | Infineon | Infineon | Infineon | Infineon | Infineon |
| Package | PG-WHTFN-9 (PQFN 3.3x3.3 Source-Down Center-Gate) | PQFN 3.3x3.3 (standard top-source) - same outline | PQFN 3.3x3.3 (standard top-source) | PQFN 3.3x3.3 Source-Down Center-Gate - identical | PQFN 3.3x3.3 Source-Down Center-Gate - identical |
| VDS max | 80 V | 80 V | 80 V | 60 V | 60 V |
| Technology Generation | OptiMOS 6 (40-100V) | OptiMOS 6 (40-100V) | OptiMOS 5 (40-100V) | OptiMOS 6 (40-100V) | OptiMOS 7 |
| Source-Down Center-Gate Package | Yes | No (standard top-source) | No (standard top-source) | Yes | Yes |
| Gate Drive Level | Logic-level | Logic-level | Logic-level | Logic-level | Logic-level |
| 100% Avalanche Tested | Yes | Yes (OptiMOS 6 family) | Yes (OptiMOS 5 family) | Yes (OptiMOS 6 family) | Yes (OptiMOS 7 family) |
Key Differentiators
- Source-Down Center-Gate PQFN 3.3x3.3 package (vs IQE036N08NM6CGATMA1 (standard top-source PQFN 3.3x3.3))
- OptiMOS 6 trench technology (vs IQE050N08NM5CGATMA1 (OptiMOS 5))
- 80 V VDS with 100% avalanche rating (vs IQE018N06NM6CGATMA1 (60 V VDS))
Design Notes
Estimated: at ID = 10 A continuous and RDS(on) of approximately 5 mOhm, the IQE031N08LM6CGSCATMA1 dissipates 0.5 W in steady state. The Source-Down package places the source pad on the bottom thermal surface, so design 9 to 25 thermal vias (0.3 mm drill, 1 oz plating) directly under the package center pad and stitch them to a 2 oz inner-layer copper pour. The Source-Down topology roughly halves junction-to-board thermal resistance compared with the standard PQFN 3.3x3.3 - critical when the FET sits next to a magnetic component with restricted airflow.
Because the part is Source-Down Center-Gate, the bottom thermal pad is electrically Source - not the more conventional Drain. The PCB land pattern must be redesigned versus a standard PQFN-9 footprint: the center exposed pad is the source thermal pad, the side leads form the drain, and the gate pad sits on the top side. Do not reuse a standard PQFN 3.3x3.3 land pattern; consult the Infineon WHTFN-9 land-pattern application note for exact pad dimensions and via placement.
The Source-Down Center-Gate configuration simplifies paralleling because the gate loop is symmetric, but it does NOT mean two devices can be paralleled by shorting their source pads - the source bond wires must still share current through a low-impedance PCB region. For high-current parallel operation, use a kelvin-source connection at the controller sense pin. Also verify that VGS never exceeds the +/-20 V absolute maximum during switching transients; a gate-source resistor of 10 kOhm to 100 kOhm is recommended to keep the gate from floating during high dV/dt events.
Keep the high-current loop (drain-source-switching node) as small as possible to minimize switching losses and EMI. In a low-side buck topology, place the low-side FET (this part) directly adjacent to the high-side FET and the input capacitor, with the source pad facing the ground plane. The Source-Down package lets you route the drain lead to the switching node with minimal parasitic inductance, which is one of the principal reasons to choose this package over standard PQFN in telecom rectifier designs.
Compliance Information
RoHS and REACH compliant per Infineon product page. Standard part is industrial-grade; AEC-Q100 qualification status not confirmed for the base MPN - request automotive variant explicitly for road-vehicle use.
