IQE050N08NM5CGSCATMA1 vs IQE036N08NM6CGATMA1 Perbandingan

Perbandingan bersamaan detil IQE050N08NM5CGSCATMA1 dari Infineon dan IQE036N08NM6CGATMA1 dari Infineon. Bandingkan spesifikasi penting, parameter listrik, pengemasan, status cycle, harga, dan ketersediaan untuk menentukan komponen terbaik untuk kebutuhan desain Anda.

Infineon
IQE036N08NM6CGATMA1 IQE036N08NM6CGATMA1 - 80V 118A OptiMOS 6 N-MOSFET | Infineon

IQE036N08NM6CGATMA1 - 80V 118A OptiMOS 6 N-MOSFET | Infineon

IQE036N08NM6CGATMA1 ✓ Aktif

Perbandingan Spesifikasi

Parameter Umum IQE050N08NM5CGSCATMA1 IQE036N08NM6CGATMA1
Merek Infineon Infineon
Kategori MOSFETs MOSFETs
Status Lingkungan Hidup Aktif Aktif
FET Type N-Channel —
Technology OptiMOS 5 (trench) Trench MOSFET, OptiMOS 6
Drain-Source Voltage (VDS) 80 V —
Continuous Drain Current (ID) at TC 99 A —
Continuous Drain Current (ID) at TA 16 A —
Pulsed Drain Current (IDM) [DATA_NEEDED: pulsed drain current] —
On-Resistance RDS(on) max at VGS=10V 5.0 mOhm —
Gate Threshold Voltage VGS(th) typ 3.8 V —
Gate Charge Qg typ [DATA_NEEDED: total gate charge] —
Total Power Dissipation at TC (PD) 100 W —
Total Power Dissipation at TA (PD) 2.5 W —
Rentang Suhu Kerja -55C to +175C (junction, typical) -55 C to +175 C (junction, Tj)
Paket PG-WHTFN-9-1 (Source-Down) PG-TTFN-9-3 (Source-Down PQFN, 3.3 x 3.3 mm)
Tipe Mounting Surface Mount Surface Mount
Lead-Free / RoHS Lead-free, RoHS compliant —
Level MSL 1 MSL1 (per JEDEC J-STD-020)
Manufacturer — Infineon Technologies
Product Family — OptiMOS 6
Tipe Transistor — N-Channel MOSFET
Drain-Source Voltage (Vds) — 80 V
Gate-Source Voltage (Vgs) — [DATA_NEEDED: Vgs max]
Continuous Drain Current (Id) at Tc — 118 A
Continuous Drain Current (Id) at Ta — 16.7 A
Rds(on) max at Vgs=10V — 3.6 mOhm
Gate Threshold Voltage (Vgs(th)) — 3.5 V (max)
Power Dissipation at Tc — 125 W
Power Dissipation at Ta — 2.5 W
Status RoHS — Compliant
Configuration — Single N-channel, Source-Down

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IQE050N08NM5CGSCATMA1

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