IQE220N15NM5ATMA1 vs IQD005N04NM6ATMA1 Comparison
Detailed side-by-side comparison of IQE220N15NM5ATMA1 by Infineon and IQD005N04NM6ATMA1 by Infineon. Compare key specifications, electrical parameters, packaging, lifecycle status, pricing, and availability to determine the best component for your design requirements.
Infineon
IQD005N04NM6ATMA1 - 40V 0.5mΩ N-Ch MOSFET PG-TSON-8-9 | Infineon
IQD005N04NM6ATMA1 ✓ ActiveSpecification Comparison
| Parameter | IQE220N15NM5ATMA1 | IQD005N04NM6ATMA1 |
|---|---|---|
| Brand | Infineon | Infineon |
| Category | MOSFETs | MOSFETs |
| Lifecycle Status | Active | Active |
| Manufacturer | Infineon Technologies | Infineon Technologies |
| Product Family | OptiMOS 5 Power-Transistor | OptiMOS 6 Power-Transistor |
| Polarity / Channel Type | N-Channel | N-Channel |
| Drain-Source Voltage (VDS) Max | 150 V | — |
| Continuous Drain Current (ID) at Ta | 7 A | — |
| Continuous Drain Current (ID) at Tc | 44 A | — |
| Power Dissipation (PD) at Ta | 2.5 W | — |
| Power Dissipation (PD) at Tc | 100 W | — |
| RDS(on) Max at VGS=10V | 22 mΩ | — |
| Gate Threshold Voltage (VGS(th)) | 4.6 V (typ at 46 µA) | — |
| Total Gate Charge (Qg) | 14.4 nC at 10 V | — |
| Input Capacitance (Ciss) | 14 pF | — |
| Output Capacitance (Coss) | 340 pF | — |
| Output Configuration | Single N-Channel | — |
| Package | PG-TSON-8-5 (Source-Down) | PG-TSON-8-9 (PQFN 5x6 mm) |
| Mounting Type | Surface Mount | Surface Mount |
| Operating Temperature | -55C to +150C (junction) | — |
| Technology | Trench MOSFET (OptiMOS 5) | OptiMOS 6 trench MOSFET |
| RoHS Status | Compliant | Compliant |
| MSL Level | 1 | 1 |
| Drain-Source Voltage (VDS) | — | 40 V |
| Continuous Drain Current (ID) at Ta=25C | — | 58 A |
| Pulsed Drain Current (IDM) at Tc | — | 610 A |
| On-Resistance RDS(on) max @ VGS=10V | — | 0.5 mOhm |
| Power Dissipation (Ta) | — | 3 W |
| Power Dissipation (Tc) | — | 333 W |
| Operating Temperature Range | — | -55C to +150C |
| Gate Threshold Voltage (VGS(th) typ) | — | [DATA_NEEDED: VGS(th) typical] |