IQEH54NE2LM7UCGATMA1 vs IQEH50NE2LM7ZCGATMA1 Comparison
Detailed side-by-side comparison of IQEH54NE2LM7UCGATMA1 by Infineon and IQEH50NE2LM7ZCGATMA1 by Infineon. Compare key specifications, electrical parameters, packaging, lifecycle status, pricing, and availability to determine the best component for your design requirements.
Infineon
IQEH54NE2LM7UCGATMA1
IQEH54NE2LM7UCGATMA1 - 25V OptiMOS 7 N-Channel MOSFET | Infineon
IQEH54NE2LM7UCGATMA1 β ActiveInfineon
IQEH50NE2LM7ZCGATMA1
IQEH50NE2LM7ZCGATMA1 - 25V 422A OptiMOS 7 N-Channel MOSFET | Infineon
IQEH50NE2LM7ZCGATMA1 β ActiveSpecification Comparison
| Parameter | IQEH54NE2LM7UCGATMA1 | IQEH50NE2LM7ZCGATMA1 |
|---|---|---|
| Brand | Infineon | Infineon |
| Category | MOSFETs | MOSFETs |
| Lifecycle Status | Active | Active |
| Stock Status | In Stock | In Stock |
| Unit Price (USD) | $1.95 | $1.42 |
| Manufacturer | Infineon Technologies | Infineon Technologies |
| Product Family | OptiMOS 7 Power-Transistor | OptiMOS 7 Power-Transistor |
| Channel Type | N-Channel | β |
| Drain-Source Voltage (VDS) | 25 V | β |
| Continuous Drain Current (ID) at Ta | 52 A | β |
| Continuous Drain Current (ID) at Tc | 406 A | β |
| Power Dissipation at Ta | 2.5 W | β |
| Power Dissipation at Tc | 150 W | β |
| Package | PG-TTFN-9-3 | PG-TTFN-9-3 |
| Mounting Type | Surface Mount | Surface Mount |
| Gate Threshold Voltage (VGS(th)) | [DATA_NEEDED: VGS(th) typical/min/max] | β |
| On-Resistance (RDS(on)) at 10V VGS | [DATA_NEEDED: RDS(on) max in mohm at VGS=10V] | β |
| Total Gate Charge (Qg) | [DATA_NEEDED: Qg typical in nC] | β |
| Operating Temperature Range | -55C to +150C (typical MOSFET range) | -55 degrees C to +175 degrees C |
| RoHS Status | Compliant | Compliant |
| MSL Level | [DATA_NEEDED: MSL rating] | β |
| Polarity / Channel Type | β | N-Channel |
| Drain-Source Voltage (Vds) Max | β | 25 V |
| Continuous Drain Current (Ta) | β | 54 A |
| Continuous Drain Current (Tc) | β | 422 A |
| Maximum On-Resistance (Rds(on)) | β | 0.5 mOhm |
| Gate Threshold Voltage (Vgs(th)) | β | 1.7 V |
| Power Dissipation (Ta) | β | 2.5 W |
| Power Dissipation (Tc) | β | 150 W |
| Maximum Junction Temperature | β | +175 degrees C |
| Technology | β | OptiMOS 7 (Trench-Gate) |
| Qualification | β | Industrial grade per Infineon datasheet |