IQEH50NE2LM7ZCGATMA1 - 25V 422A OptiMOS 7 N-Channel MOSFET | Infineon
MPN: IQEH50NE2LM7ZCGATMA1 ✓ Active| Qty | Unit Price | Extended |
|---|---|---|
| 1 | $2.85 | $2.85 |
| 10 | $2.55 | $25.50 |
| 100 | $2.18 | $218.00 |
| 500 | $1.92 | $960.00 |
| 1,000 | $1.7 | $1,700.00 |
| 5,000 | $1.42 | $7,100.00 |
IQEH50NE2LM7ZCGATMA1 Overview
An N-channel MOSFET (Metal-Oxide-Semiconductor Field-Effect Transistor) is a voltage-controlled three-terminal switching device that conducts current between drain and source when a positive gate-source voltage exceeds the threshold. Within the broader semiconductor taxonomy, a power MOSFET belongs to the discrete power device family alongside IGBTs and thyristors, and it serves as the fundamental building block of synchronous rectification, hot-swap, and load-switch stages. The OptiMOS 7 generation from Infineon is the company's 25 V and 40 V logic-level optimized family targeting AI server, telecom, and high-density computing power rails.
The IQEH50NE2LM7ZCGATMA1's headline features are its extremely low 0.5 mOhm maximum on-resistance, 422 A continuous drain current at case, and +175 degrees C operating junction temperature. These specifications enable very low conduction losses in high-current synchronous-rectifier and OR-ing applications, while the elevated temperature rating provides extra margin for hot-spot-tolerant designs. Infineon's OptiMOS 7 technology also delivers improved switching figures of merit versus prior generations, allowing higher switching frequencies with reduced gate-drive losses.
Architecturally, the device uses a trench-gate silicon structure optimized for 25 V breakdown class, with the source and gate bondable from the top side and the drain exposed through the package's thermal pad. The PG-TTFN-9-3 (Infineon Thin-package Topside-Flat No-lead) footprint provides Kelvin-source connection options that minimize gate-loop inductance, an important consideration when the MOSFET is operated at high di/dt in 48 V-to-PoL conversion stages for AI processors.
Typical applications include AI server 48 V intermediate bus converters, OR-ing and hot-swap controllers in redundant telecom rectifiers, synchronous-rectifier stages for telecom DC-DC bricks, e-mobility auxiliary 24 V/12 V power rails, and high-current USB-PD source switches. The combination of 25 V rating and 0.5 mOhm Rds(on) is particularly well-matched to point-of-load stages that step down 12 V or 5 V intermediate rails directly at the processor socket.
When designing with this device, pay attention to PCB layout for the gate-drive loop: keep the gate-driver IC as close as possible to the gate and Kelvin-source pins to minimize parasitic inductance and ringing. Thermal management is critical at high current - use generous copper pours on the drain pad and, when possible, a multi-layer PCB with thermal vias to spread heat into inner copper planes.
This page synthesizes distributor pricing, drop-in OptiMOS 7 alternatives, and practical design notes not found in the manufacturer datasheet alone.
Drop-in alternatives for IQEH50NE2LM7ZCGATMA1 — same package, pin-to-pin compatible. Different-package parts requiring PCB rework are excluded.
Variants in this series
Same-series models that are drop-in compatible with IQEH50NE2LM7ZCGATMA1 (same form factor and footprint) — differing in Package, Operating Temperature Range, Technology, Maximum Junction Temperature, RoHS Status.
Quick Comparison Tool — Select alternative parts for side-by-side comparison:
IQEH50NE2LM7UCGSCATMA1
✅ Drop-In✓ In Stock
$1.78 / Unit
View Datasheet →IQEH54NE2LM7UCGATMA1
✅ Drop-In✓ In Stock
$1.95 / Unit
View Datasheet →IQEH68NE2LM7UCGATMA1
✅ Drop-In✓ In Stock
$1.35 / Unit
View Datasheet →IQEH50NE2LM7ZCGATMA1 Maximum Ratings & Electrical Characteristics
| Manufacturer | Infineon Technologies |
| Product Family | OptiMOS 7 Power-Transistor |
| Polarity / Channel Type | N-Channel |
| Drain-Source Voltage (Vds) Max | 25 V |
| Continuous Drain Current (Ta) | 54 A |
| Continuous Drain Current (Tc) | 422 A |
| Maximum On-Resistance (Rds(on)) | 0.5 mOhm |
| Gate Threshold Voltage (Vgs(th)) | 1.7 V |
| Power Dissipation (Ta) | 2.5 W |
| Power Dissipation (Tc) | 150 W |
| Maximum Junction Temperature | +175 degrees C |
| Operating Temperature Range | -55 degrees C to +175 degrees C |
| Package | PG-TTFN-9-3 |
| Mounting Type | Surface Mount |
| Technology | OptiMOS 7 (Trench-Gate) |
| RoHS Status | Compliant |
| Qualification | Industrial grade per Infineon datasheet |
IQEH50NE2LM7ZCGATMA1 Pin Configuration
| Pin 1 | Gate — Gate drive input; logic-level threshold ~1.7 V |
| Pin 2 | Kelvin Source — Kelvin-source connection for gate return; minimizes gate-loop inductance |
| Pin 3 | Source — Source pad (electrical) |
| Pin 4 | Source — Source pad (electrical) |
| Pin 5 | Source — Source pad (electrical) |
| Pin 6 | Drain — Drain thermal/electrical pad |
| Pin 7 | Drain — Drain thermal/electrical pad |
| Pin 8 | Drain — Drain thermal/electrical pad |
| Pin 9 | Drain — Drain thermal/electrical pad |
Safe Operating Area (DC)
Typical Applications
IQEH50NE2LM7ZCGATMA1 is suitable for 6 applications: AI Server 48V Intermediate Bus Converter, Synchronous Rectifier in 12V DC-DC Buck, Telecom Hot-Swap and OR-ing Controller, USB-PD Source Power Switch, E-Mobility 12V/24V Auxiliary Rail, Robotics and Industrial Motor Drive H-Bridge.
AI Server 48V Intermediate Bus Converter
The IQEH50NE2LM7ZCGATMA1 fits AI server 48 V-to-12 V intermediate bus converter (IBC) stages where 25 V OptiMOS 7 parts are commonly deployed. Its 25 V Vds rating provides comfortable headroom on the 12 V secondary side, while the 0.5 mOhm max Rds(on) and 422 A Tc rating deliver low conduction loss at the high currents typical of GPU/CPU power-delivery networks. The PG-TTFN-9-3 Kelvin-source connection minimizes gate-loop inductance, which is critical when the MOSFET is switched at high di/dt in multi-megahertz resonant or hard-switched topologies. Compared with a 40 V part, the 25 V silicon achieves lower Rds(on) per unit area, which improves power density on the secondary-side synchronous rectifier. Designers should pair the part with a dedicated gate-driver IC placed within 5 mm of the gate pad to exploit the Kelvin-source benefit fully.
Recommended
Synchronous Rectifier in 12V DC-DC Buck
The IQEH50NE2LM7ZCGATMA1 is well-matched as the low-side synchronous FET in 12 V input buck converters that step down to 1 V or below for processor cores. Its 0.5 mOhm max Rds(on) keeps I-squared-R conduction loss minimal even at continuous currents above 50 A, while the 25 V drain-source rating provides more than double the headroom required for 12 V rails. The OptiMOS 7 trench-gate structure also delivers improved switching figures of merit versus prior generations, allowing higher switching frequencies that shrink the output inductor. In a typical 12 V-to-1 V 50 A buck, using the IQEH50NE2LM7ZCGATMA1 on the low side and a 40 V control FET on the high side yields >96% peak efficiency. The exposed-drain PG-TTFN-9-3 pad also serves as the primary thermal path, so use extensive copper and thermal vias.
Recommended
Telecom Hot-Swap and OR-ing Controller
The IQEH50NE2LM7ZCGATMA1 handles the -48 V rectifier OR-ing and 12 V/24 V hot-swap MOSFET role in redundant telecom power shelves where low Rds(on) directly translates to lower voltage drop and heat dissipation. Its 422 A Tc rating gives tremendous design margin even when the OR-ing FET continuously carries 100-200 A in a 12 V distribution bus. The PG-TTFN-9-3 footprint is well-suited to the high-current PCB copper pours typical of telecom backplane designs, and the Kelvin-source option allows clean gate control during fast hot-plug events. Infineon OptiMOS 7 parts are widely used in this segment because of their proven long-term reliability at +175 degrees C junction. Add a TVS across drain-source to absorb transients during hot-plug inductance ringing.
Recommended
USB-PD Source Power Switch
The IQEH50NE2LM7ZCGATMA1 is well-suited to high-current USB-PD source-side power-path switches that need to carry 5 A, 20 V EPR (Extended Power Range) without significant voltage drop or heat rise. Its 0.5 mOhm Rds(on) results in only 25 mV drop at 5 A and ~63 mV at the EPR 36 W level, well within USB-PD cable voltage-tolerance budgets. The 25 V Vds rating covers 20 V EPR outputs with adequate transient margin, and the small PG-TTFN-9-3 footprint fits inside space-constrained USB-C charger housings. For EPR designs above 28 V, evaluate a higher-voltage OptiMOS 7 part instead. Pair with a USB-PD controller such as Infineon's EZ-PD family for a complete Type-C source solution.
Recommended
E-Mobility 12V/24V Auxiliary Rail
The IQEH50NE2LM7ZCGATMA1 fits 12 V and 24 V auxiliary rails in mild-hybrid and battery-electric vehicles where low conduction loss and small PCB footprint matter. The 25 V Vds rating covers 24 V battery transients when paired with a TVS clamp, while the 0.5 mOhm Rds(on) keeps voltage drop and dissipation minimal at typical 30-60 A accessory loads (lighting, infotainment, body controllers). Although the part is industrial grade rather than AEC-Q101 automotive qualified, designers often use OptiMOS 7 25 V parts in non-safety auxiliary applications. The PG-TTFN-9-3's top-side cooling path simplifies heatsink attachment on modules behind the dashboard. For safety-critical or AEC-Q100-required rails, select an Infineon automotive-grade OptiMOS 7 variant.
Recommended
Robotics and Industrial Motor Drive H-Bridge
The IQEH50NE2LM7ZCGATMA1 is suitable as the switching element in low-voltage H-bridge motor drives for robotics, AGVs, and small industrial servo amplifiers operating on 12 V or 24 V rails. Its 0.5 mOhm Rds(on) and 422 A peak rating enable high-torque PWM drive at low duty-cycle losses, and the 25 V Vds class covers 24 V industrial bus transients. The PG-TTFN-9-3 Kelvin-source pin simplifies gate-drive layout for the high-side FET in a bootstrap configuration. Designers should add gate-source resistors of 10-100 ohm to dampen ringing during the fast PWM transitions common at 20-50 kHz. The +175 degrees C junction rating also gives extra margin in the enclosed motor-drive enclosures common in robotics.
Recommended
Recommended Products Summary
Engineering reference data for IQEH50NE2LM7ZCGATMA1 — comparison, design guidance, and compliance information.
Selection Guide
Comparison with Alternatives
| Parameter | This Product | IQEH50NE2LM7UCGSCATMA1 | IQEH54NE2LM7UCGATMA1 | IQEH68NE2LM7UCGATMA1 |
|---|---|---|---|---|
| Brand | Infineon | Infineon | Infineon | Infineon |
| Package | PG-TTFN-9-3 | PG-TTFN-9-3 (same) | PG-TTFN-9-3 (same) | PG-TTFN-9-3 (same) |
| Vds Max | 25 V | 25 V | 25 V | 25 V |
| Continuous Drain Current (Tc) | 422 A | ~422 A (same die) | Higher bin | Highest bin |
| Rds(on) Max | 0.5 mOhm | ~0.5 mOhm (different bin/test) | ~0.55 mOhm (+10%) | ~0.6 mOhm (+20%) |
| Continuous Drain Current (Ta) | 54 A | 54 A | 54 A | 68 A |
| Gate Threshold Vgs(th) | 1.7 V | 1.7 V | 1.7 V | 1.7 V |
| Power Dissipation (Tc) | 150 W | 150 W | 150 W | 150 W |
Key Differentiators
- Very low 0.5 mOhm max Rds(on) in compact PG-TTFN-9-3 (vs IQEH54NE2LM7UCGATMA1)
- Top-bin current handling versus sibling OptiMOS 7 parts (vs IQEH68NE2LM7UCGATMA1)
- Infineon OptiMOS 7 technology positioning for AI server power (vs Non-Infineon 25 V MOSFETs)
Design Notes
Estimated: At 200 A continuous load and 0.5 mOhm Rds(on), the IQEH50NE2LM7ZCGATMA1 dissipates approximately I-squared-R = 200 x 200 x 0.0005 = 20 W. To keep the junction below +150 degrees C with a +85 degrees C ambient, the thermal resistance from junction to case must remain below (150-85)/20 = 3.25 degrees C/W, which the PG-TTFN-9-3 footprint can achieve only with substantial PCB copper and forced cooling. Use a multi-layer PCB with thermal vias under the drain pad and connect the Kelvin-source pad back to the controller ground plane with a wide trace to avoid raising source inductance.
Minimize gate-loop inductance by placing the gate-driver IC within 5 mm of the gate pad and connecting the gate-driver ground return directly to the Kelvin-source pin. Use a 10-100 ohm gate-source resistor close to the gate pin to dampen ringing. The high-current drain path should use multiple top-layer copper pours stitched together with thermal vias to inner ground planes. Keep the switching-node copper area small to reduce EMI radiated emissions.
Do not exceed the +175 degrees C maximum junction temperature rating even though OptiMOS 7 silicon is robust - sustained operation above 150 degrees C accelerates solder-joint fatigue. Ensure the Vgs gate-drive voltage stays within the datasheet-recommended range; under-driven gates cause the part to operate in the linear region and overheat. Verify the gate-driver can source and sink the required Qg at the desired switching frequency without excessive ringing. Finally, always include a TVS or snubber across drain-source if the application includes significant inductive transients.
Compliance Information
RoHS and REACH compliance confirmed via Infineon product page and DigiKey listing. Halogen-free status not explicitly stated in verified data. Industrial-grade qualification; for AEC-Q100 automotive requirements, choose an automotive-grade OptiMOS 7 variant.
