IRF1010EPBF vs IRF1010NPBF-VB Comparison
Detailed side-by-side comparison of IRF1010EPBF by Infineon and IRF1010NPBF-VB by VBsemi Elec. Compare key specifications, electrical parameters, packaging, lifecycle status, pricing, and availability to determine the best component for your design requirements.
Specification Comparison
| Parameter | IRF1010EPBF | IRF1010NPBF-VB |
|---|---|---|
| Brand | Infineon | VBsemi Elec |
| Category | MOSFETs | MOSFETs |
| Lifecycle Status | Active | Active |
| Stock Status | In Stock | In Stock |
| Unit Price (USD) | $0.45 | $0.25 |
| Polarity | N-Channel | — |
| Drain-Source Voltage (VDS) | 60 V | — |
| Continuous Drain Current (ID) | 84 A at Tc | — |
| Power Dissipation (PD) | 200 W at Tc | — |
| On-Resistance (RDS(on)) | 12 mOhm | — |
| Total Gate Charge (Qg) | 86.6 nC | — |
| Technology | HEXFET Power MOSFET | — |
| Package | TO-220AB | TO-220AB (Through Hole) |
| Mounting Type | Through Hole | Through Hole |
| Configuration | Single FET | Single FET |
| RoHS Status | RoHS3 Compliant | Compliant (Pb-free suffix) |
| MSL Level | 3 (168 Hours) | — |
| Operating Temperature | [DATA_NEEDED: operating temperature range] | — |
| Gate Threshold Voltage (VGS(th)) | [DATA_NEEDED: gate threshold voltage] | — |
| Rise Time / Fall Time | [DATA_NEEDED: switching times] | — |
| Thermal Resistance (RthJC) | [DATA_NEEDED: thermal resistance junction to case] | — |
| Input Capacitance (Ciss) | [DATA_NEEDED: input capacitance] | — |
| Transistor Polarity | — | N-Channel |
| Drain-Source Voltage VDSS | — | 55 V |
| Continuous Drain Current ID | — | 85 A (Tc) |
| Power Dissipation PD | — | 180 W (Tc) |
| On-Resistance RDS(on) | — | 0.014 Ohm (14 mOhm) |
| Total Gate Charge Qg | — | 80 nC |
| Gate-Source Voltage VGSS | — | +/-20 V |
| Operating Mode | — | Enhancement |
| Number of Channels | — | 1 |
| Process Technology | — | Planar HEXFET, Advanced Process Technology |
| Recommended Switching Frequency | — | Below 100 kHz |
| Market Qualification | — | Industrial |