IRF1010EPBF vs IRF1010NPBF-VB 对比
详细并排对比 IRF1010EPBF 出自 Infineon 和 IRF1010NPBF-VB 出自 VBsemi Elec。对比关键规格、电气参数、封装、生命周期状态、价格和供货情况，以确定最适合您设计需求的元器件。
规格对比
| 参数 | IRF1010EPBF | IRF1010NPBF-VB |
|---|---|---|
| 品牌 | Infineon | VBsemi Elec |
| 分类 | MOSFETs | MOSFETs |
| 生命周期状态 | 有效 | 有效 |
| 库存状态 | 有库存 | 有库存 |
| 单价（USD） | $0.45 | $0.25 |
| Polarity | N-Channel | — |
| Drain-Source Voltage (VDS) | 60 V | — |
| Continuous Drain Current (ID) | 84 A at Tc | — |
| Power Dissipation (PD) | 200 W at Tc | — |
| On-Resistance (RDS(on)) | 12 mOhm | — |
| Total Gate Charge (Qg) | 86.6 nC | — |
| Technology | HEXFET Power MOSFET | — |
| 封装 | TO-220AB | TO-220AB (Through Hole) |
| 安装类型 | Through Hole | Through Hole |
| Configuration | Single FET | Single FET |
| RoHS 状态 | RoHS3 Compliant | Compliant (Pb-free suffix) |
| MSL 等级 | 3 (168 Hours) | — |
| 工作温度 | [DATA_NEEDED: operating temperature range] | — |
| Gate Threshold Voltage (VGS(th)) | [DATA_NEEDED: gate threshold voltage] | — |
| Rise Time / Fall Time | [DATA_NEEDED: switching times] | — |
| Thermal Resistance (RthJC) | [DATA_NEEDED: thermal resistance junction to case] | — |
| Input Capacitance (Ciss) | [DATA_NEEDED: input capacitance] | — |
| Transistor Polarity | — | N-Channel |
| Drain-Source Voltage VDSS | — | 55 V |
| Continuous Drain Current ID | — | 85 A (Tc) |
| Power Dissipation PD | — | 180 W (Tc) |
| On-Resistance RDS(on) | — | 0.014 Ohm (14 mOhm) |
| Total Gate Charge Qg | — | 80 nC |
| Gate-Source Voltage VGSS | — | +/-20 V |
| Operating Mode | — | Enhancement |
| Number of Channels | — | 1 |
| Process Technology | — | Planar HEXFET, Advanced Process Technology |
| Recommended Switching Frequency | — | Below 100 kHz |
| Market Qualification | — | Industrial |