IRF1010EPBF vs IRF1407PBF Comparison

Detailed side-by-side comparison of IRF1010EPBF by Infineon and IRF1407PBF by Infineon. Compare key specifications, electrical parameters, packaging, lifecycle status, pricing, and availability to determine the best component for your design requirements.

Specification Comparison

Parameter IRF1010EPBF IRF1407PBF
Brand Infineon Infineon
Category MOSFETs MOSFETs
Lifecycle Status Active Active
Stock Status In Stock In Stock
Unit Price (USD) $0.45 $0.86
Polarity N-Channel —
Drain-Source Voltage (VDS) 60 V 75 V
Continuous Drain Current (ID) 84 A at Tc —
Power Dissipation (PD) 200 W at Tc —
On-Resistance (RDS(on)) 12 mOhm —
Total Gate Charge (Qg) 86.6 nC —
Technology HEXFET Power MOSFET HEXFET (stripe-planar MOSFET)
Package TO-220AB TO-220AB (through-hole, 3 leads)
Mounting Type Through Hole Through Hole
Configuration Single FET —
RoHS Status RoHS3 Compliant —
MSL Level 3 (168 Hours) —
Operating Temperature [DATA_NEEDED: operating temperature range] —
Gate Threshold Voltage (VGS(th)) [DATA_NEEDED: gate threshold voltage] —
Rise Time / Fall Time [DATA_NEEDED: switching times] —
Thermal Resistance (RthJC) [DATA_NEEDED: thermal resistance junction to case] —
Input Capacitance (Ciss) [DATA_NEEDED: input capacitance] —
FET Type — N-Channel
Continuous Drain Current (ID) at TC=25C — 130 A
Pulsed Drain Current (IDM) — [DATA_NEEDED: pulsed drain current]
Power Dissipation (PD) at TC=25C — 330 W
On-Resistance RDS(on) at VGS=10V — 7.8 mOhm (typical)
Gate-Source Threshold Voltage (VGS(th)) — [DATA_NEEDED: VGS threshold typical/min/max]
Gate Charge (Qg) — 160 nC (typical)
Maximum Junction Temperature — 175 C
Operating Temperature Range — -55 C to +175 C
Lead-Free / RoHS — Lead-free, RoHS compliant (PBF suffix)
Avalanche Rating — Repetitive avalanche rated

Datasheets & Resources

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