IRF1010EPBF vs IRF1407PBF 对比
详细并排对比 IRF1010EPBF 出自 Infineon 和 IRF1407PBF 出自 Infineon。对比关键规格、电气参数、封装、生命周期状态、价格和供货情况，以确定最适合您设计需求的元器件。
规格对比
| 参数 | IRF1010EPBF | IRF1407PBF |
|---|---|---|
| 品牌 | Infineon | Infineon |
| 分类 | MOSFETs | MOSFETs |
| 生命周期状态 | 有效 | 有效 |
| 库存状态 | 有库存 | 有库存 |
| 单价（USD） | $0.45 | $0.86 |
| Polarity | N-Channel | — |
| Drain-Source Voltage (VDS) | 60 V | 75 V |
| Continuous Drain Current (ID) | 84 A at Tc | — |
| Power Dissipation (PD) | 200 W at Tc | — |
| On-Resistance (RDS(on)) | 12 mOhm | — |
| Total Gate Charge (Qg) | 86.6 nC | — |
| Technology | HEXFET Power MOSFET | HEXFET (stripe-planar MOSFET) |
| 封装 | TO-220AB | TO-220AB (through-hole, 3 leads) |
| 安装类型 | Through Hole | Through Hole |
| Configuration | Single FET | — |
| RoHS 状态 | RoHS3 Compliant | — |
| MSL 等级 | 3 (168 Hours) | — |
| 工作温度 | [DATA_NEEDED: operating temperature range] | — |
| Gate Threshold Voltage (VGS(th)) | [DATA_NEEDED: gate threshold voltage] | — |
| Rise Time / Fall Time | [DATA_NEEDED: switching times] | — |
| Thermal Resistance (RthJC) | [DATA_NEEDED: thermal resistance junction to case] | — |
| Input Capacitance (Ciss) | [DATA_NEEDED: input capacitance] | — |
| FET Type | — | N-Channel |
| Continuous Drain Current (ID) at TC=25C | — | 130 A |
| Pulsed Drain Current (IDM) | — | [DATA_NEEDED: pulsed drain current] |
| Power Dissipation (PD) at TC=25C | — | 330 W |
| On-Resistance RDS(on) at VGS=10V | — | 7.8 mOhm (typical) |
| Gate-Source Threshold Voltage (VGS(th)) | — | [DATA_NEEDED: VGS threshold typical/min/max] |
| Gate Charge (Qg) | — | 160 nC (typical) |
| Maximum Junction Temperature | — | 175 C |
| 工作温度范围 | — | -55 C to +175 C |
| Lead-Free / RoHS | — | Lead-free, RoHS compliant (PBF suffix) |
| Avalanche Rating | — | Repetitive avalanche rated |