IRF1010ZSTRLPBF vs IRF1010ESTRLPBF Comparison

Detailed side-by-side comparison of IRF1010ZSTRLPBF by Infineon and IRF1010ESTRLPBF by Infineon. Compare key specifications, electrical parameters, packaging, lifecycle status, pricing, and availability to determine the best component for your design requirements.

Infineon
IRF1010ESTRLPBF IRF1010ESTRLPBF - 60V 84A N-Channel MOSFET | Infineon

IRF1010ESTRLPBF - 60V 84A N-Channel MOSFET | Infineon

IRF1010ESTRLPBF ✓ Active

Specification Comparison

Parameter IRF1010ZSTRLPBF IRF1010ESTRLPBF
Brand Infineon Infineon
Category MOSFETs MOSFETs
Lifecycle Status Active Active
Stock Status In Stock In Stock
Unit Price (USD) $0.00 $0.00
Polarity N-Channel —
Operating Mode Enhancement Enhancement
Drain-Source Breakdown Voltage (V(BR)DSS) 55 V —
Continuous Drain Current (Id) 75 A at Tc —
Continuous Drain Current (Id, distributor listing) 94 A —
Drain-Source On-Resistance (RDS(on)) 7.5 mOhm —
RDS(on) (alternate condition) 14.0 mOhm —
Total Gate Charge (Qg) 63 nC 86.6 nC
Power Dissipation (Pd) 140 W at Tc —
Junction Operating Temperature 175 C (max) —
Package D2PAK (TO-263), Surface Mount D2PAK (TO-263)
Mounting Type Surface Mount Surface Mount
Technology HEXFET Advanced Process Technology HEXFET planar
Avalanche Rating Improved repetitive avalanche rating —
Gate-Source Voltage (Vgs) [DATA_NEEDED: gate-source voltage] —
RoHS Status RoHS3 Compliant (PBF lead-free suffix) —
Gate Threshold Voltage (Vgs(th)) [DATA_NEEDED: gate threshold voltage] —
FET Type — N-Channel
Drain-Source Voltage (Vdss) — 60 V
Continuous Drain Current (Id) @ Tc — 84 A
Power Dissipation (Pd) @ Tc — 200 W
On-Resistance (RDS on) @ VGS=10V — 12 mOhm
Drive Voltage — 10 V (standard level)
Qualification — JEDEC standard qualified
Structure — Planar cell (wide SOA)
Avalanche Testing — 100% avalanche energy tested
Sourcing — Multi-vendor, broad distribution availability
Pb-Free / RoHS — PBF (Pb-free) suffix

Datasheets & Resources

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