IRF1010ZSTRLPBF vs IRF1010ESTRLPBF 对比
详细并排对比 IRF1010ZSTRLPBF 出自 Infineon 和 IRF1010ESTRLPBF 出自 Infineon。对比关键规格、电气参数、封装、生命周期状态、价格和供货情况，以确定最适合您设计需求的元器件。
规格对比
| 参数 | IRF1010ZSTRLPBF | IRF1010ESTRLPBF |
|---|---|---|
| 品牌 | Infineon | Infineon |
| 分类 | MOSFETs | MOSFETs |
| 生命周期状态 | 有效 | 有效 |
| 库存状态 | 有库存 | 有库存 |
| 单价（USD） | $0.00 | $0.00 |
| Polarity | N-Channel | — |
| Operating Mode | Enhancement | Enhancement |
| Drain-Source Breakdown Voltage (V(BR)DSS) | 55 V | — |
| Continuous Drain Current (Id) | 75 A at Tc | — |
| Continuous Drain Current (Id, distributor listing) | 94 A | — |
| Drain-Source On-Resistance (RDS(on)) | 7.5 mOhm | — |
| RDS(on) (alternate condition) | 14.0 mOhm | — |
| Total Gate Charge (Qg) | 63 nC | 86.6 nC |
| Power Dissipation (Pd) | 140 W at Tc | — |
| Junction Operating Temperature | 175 C (max) | — |
| 封装 | D2PAK (TO-263), Surface Mount | D2PAK (TO-263) |
| 安装类型 | Surface Mount | Surface Mount |
| Technology | HEXFET Advanced Process Technology | HEXFET planar |
| Avalanche Rating | Improved repetitive avalanche rating | — |
| Gate-Source Voltage (Vgs) | [DATA_NEEDED: gate-source voltage] | — |
| RoHS 状态 | RoHS3 Compliant (PBF lead-free suffix) | — |
| Gate Threshold Voltage (Vgs(th)) | [DATA_NEEDED: gate threshold voltage] | — |
| FET Type | — | N-Channel |
| Drain-Source Voltage (Vdss) | — | 60 V |
| Continuous Drain Current (Id) @ Tc | — | 84 A |
| Power Dissipation (Pd) @ Tc | — | 200 W |
| On-Resistance (RDS on) @ VGS=10V | — | 12 mOhm |
| Drive Voltage | — | 10 V (standard level) |
| Qualification | — | JEDEC standard qualified |
| Structure | — | Planar cell (wide SOA) |
| Avalanche Testing | — | 100% avalanche energy tested |
| Sourcing | — | Multi-vendor, broad distribution availability |
| Pb-Free / RoHS | — | PBF (Pb-free) suffix |