IRF1310NSTRLPBF vs IRFB7545PBF Comparison

Detailed side-by-side comparison of IRF1310NSTRLPBF by Infineon and IRFB7545PBF by Infineon. Compare key specifications, electrical parameters, packaging, lifecycle status, pricing, and availability to determine the best component for your design requirements.

Specification Comparison

Parameter IRF1310NSTRLPBF IRFB7545PBF
Brand Infineon Infineon
Category MOSFETs MOSFETs
Lifecycle Status Active Active
Transistor Type N-Channel MOSFET —
Drain-Source Voltage (VDS) 100 V —
Continuous Drain Current (ID) at TC=25C 42 A —
Pulsed Drain Current (IDM) [DATA_NEEDED: pulsed drain current] 380 A
On-Resistance RDS(on) max at VGS=10V 36 mOhm —
Gate-Source Voltage (VGS) max [DATA_NEEDED: VGS max rating] —
Gate Threshold Voltage (VGS(th)) [DATA_NEEDED: VGS(th) typical] —
Total Gate Charge (Qg) 73.3 nC —
Power Dissipation (PD) at TC=25C 160 W —
Power Dissipation (PD) at TA=25C 3.8 W —
Operating Temperature Range -55C to +175C —
Package D2PAK (TO-263AB) TO-220AB (Through-Hole)
Mounting Type Surface Mount Through Hole (THT)
Technology IR MOSFET (HEXFET) StrongIRFET™ (HEXFET, N-Channel)
Built-in Diode Yes (intrinsic body diode) —
Lead-Free / RoHS Yes (PBF suffix) Yes (Lead-Free, PBF suffix)
Configuration Single with built-in diode —
Manufacturer — Infineon Technologies
Part Number — IRFB7545PBF
Polarity — N-Channel
VDS (Drain-Source Voltage) max — 60 V
VGS (Gate-Source Voltage) max — ±20 V
RDS(on) max at VGS=10V — 5.9 mOhm
Continuous Drain Current (ID) at Tc=25C — 95 A
Single-Pulse Avalanche Current (IAS) — 57 A
Power Dissipation (PD) at Tc=25C — 125 W
Thermal Resistance Junction-to-Case (RthJC) — 1.0 C/W
Operating Junction Temperature — -55C to +175C
MSL Level — N/A (Through-Hole)
Gate Drive Voltage (typical) — 10 V
Avalanche Energy Rated — Yes

Datasheets & Resources

Browse All Products Create BOM Request Quote