IRF1405PBF vs IRF150P220AKMA1 Comparison
Detailed side-by-side comparison of IRF1405PBF by Infineon and IRF150P220AKMA1 by Infineon. Compare key specifications, electrical parameters, packaging, lifecycle status, pricing, and availability to determine the best component for your design requirements.
Specification Comparison
| Parameter | IRF1405PBF | IRF150P220AKMA1 |
|---|---|---|
| Brand | Infineon | Infineon |
| Category | MOSFETs | MOSFETs |
| Lifecycle Status | Active | Active |
| Stock Status | In Stock | In Stock |
| Unit Price (USD) | $1.42 | $3.55 |
| Manufacturer | Infineon Technologies (formerly International Rectifier) | Infineon Technologies |
| Part Number Suffix | PbF (lead-free, RoHS compliant) | β |
| Transistor Type | N-Channel MOSFET | N-Channel MOSFET |
| Technology | HEXFET (Stripe Planar cell structure) | StrongIRFET |
| Drain-Source Voltage (V_DS) | 55 V | β |
| Continuous Drain Current (I_D, Tc=25C) | 169 A | β |
| Continuous Drain Current (I_D, Tc=100C) | [DATA_NEEDED: I_D at Tc=100C] | β |
| Pulsed Drain Current (I_DM) | [DATA_NEEDED: pulsed drain current rating] | β |
| Maximum Power Dissipation (P_D, Tc=25C) | 330 W | β |
| R_DS(on) Maximum | 5.3 mOhm @ V_GS = 10 V | β |
| Gate Threshold Voltage (V_GS(th)) | 2.0 V to 4.0 V | β |
| Maximum Gate-Source Voltage (V_GS) | [DATA_NEEDED: maximum V_GS rating] | β |
| Operating Junction Temperature (T_J max) | 175 C | β |
| Storage Temperature Range | [DATA_NEEDED: storage temperature range] | β |
| Package | TO-220AB (through-hole) | TO-247-3 (PG-TO247-3) |
| Mounting Type | Through Hole | Through Hole |
| Qualification | JEDEC qualified, optimized for switching below 100 kHz | β |
| RoHS Status | PbF suffix indicates lead-free / RoHS compliant | Compliant |
| Single Pulse Avalanche Energy (E_AS) | [DATA_NEEDED: avalanche energy rating] | β |
| Thermal Resistance Junction-to-Case (R_theta_JC) | [DATA_NEEDED: thermal resistance R_theta_JC] | β |
| Part Number | β | IRF150P220AKMA1 |
| Drain-Source Voltage (VDS max) | β | 150 V |
| Continuous Drain Current (ID) at Tc=25C | β | 203 A |
| On-Resistance (RDS(on) max) at VGS=10V | β | 2.7 mOhm |
| Gate-Source Voltage (VGS max) | β | [DATA_NEEDED: VGS max] |
| Gate Threshold Voltage (VGS(th) typ) | β | [DATA_NEEDED: VGS(th) typ] |
| Power Dissipation (Pd) at Tc=25C | β | 556 W |
| Power Dissipation (Pd) at Ta=25C | β | 3.8 W |
| Operating Temperature Range | β | -55C to +175C |
| Terminal Finish | β | Tin (Sn) |
| JESD-609 Code | β | e3 |
| Lead-Free | β | Yes |