IRF1405PBF vs IRF150P220AKMA1 比較

詳細並排比較 IRF1405PBF 由 Infineon 與 IRF150P220AKMA1 由 Infineon. 比較關鍵規格、電氣參數、封裝、生命週期狀態、價格與供貨情況,以找出最符合您設計需求的元件。

規格比較

參數 IRF1405PBF IRF150P220AKMA1
品牌 Infineon Infineon
類別 MOSFETs MOSFETs
生命週期狀態 啟用中 啟用中
Manufacturer Infineon Technologies (formerly International Rectifier) Infineon Technologies
Part Number Suffix PbF (lead-free, RoHS compliant) —
電晶體類型 N-Channel MOSFET N-Channel MOSFET
Technology HEXFET (Stripe Planar cell structure) StrongIRFET
Drain-Source Voltage (V_DS) 55 V —
Continuous Drain Current (I_D, Tc=25C) 169 A —
Continuous Drain Current (I_D, Tc=100C) [DATA_NEEDED: I_D at Tc=100C] —
Pulsed Drain Current (I_DM) [DATA_NEEDED: pulsed drain current rating] —
Maximum Power Dissipation (P_D, Tc=25C) 330 W —
R_DS(on) Maximum 5.3 mOhm @ V_GS = 10 V —
Gate Threshold Voltage (V_GS(th)) 2.0 V to 4.0 V —
Maximum Gate-Source Voltage (V_GS) [DATA_NEEDED: maximum V_GS rating] —
Operating Junction Temperature (T_J max) 175 C —
Storage Temperature Range [DATA_NEEDED: storage temperature range] —
封裝 TO-220AB (through-hole) TO-247-3 (PG-TO247-3)
安裝類型 Through Hole Through Hole
Qualification JEDEC qualified, optimized for switching below 100 kHz —
RoHS 狀態 PbF suffix indicates lead-free / RoHS compliant Compliant
Single Pulse Avalanche Energy (E_AS) [DATA_NEEDED: avalanche energy rating] —
Thermal Resistance Junction-to-Case (R_theta_JC) [DATA_NEEDED: thermal resistance R_theta_JC] —
Part Number — IRF150P220AKMA1
Drain-Source Voltage (VDS max) — 150 V
Continuous Drain Current (ID) at Tc=25C — 203 A
On-Resistance (RDS(on) max) at VGS=10V — 2.7 mOhm
Gate-Source Voltage (VGS max) — [DATA_NEEDED: VGS max]
Gate Threshold Voltage (VGS(th) typ) — [DATA_NEEDED: VGS(th) typ]
Power Dissipation (Pd) at Tc=25C — 556 W
Power Dissipation (Pd) at Ta=25C — 3.8 W
工作溫度範圍 — -55C to +175C
Terminal Finish — Tin (Sn)
JESD-609 Code — e3
Lead-Free — Yes

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