IRF1405PBF vs IRF150P220AKMA1 तुलना
विस्तृत दोनों ओर की तुलना IRF1405PBF द्वारा Infineon और IRF150P220AKMA1 द्वारा Infineon. मुख्य विशेषताओं, इलेक्ट्रिकल पैरामीटर, पैकेजिंग, चक्र स्थिति, मूल्यांकन और उपलब्धता को तुलना करके अपनी डिजाइन की आवश्यकताओं के लिए सबसे अच्छा घटक निर्धारित करें。
विशेषता तुलना
| पैरामीटर | IRF1405PBF | IRF150P220AKMA1 |
|---|---|---|
| ब्रांड | Infineon | Infineon |
| श्रेणी | MOSFETs | MOSFETs |
| लाइफसाइकिल स्थिति | सक्रिय | सक्रिय |
| Manufacturer | Infineon Technologies (formerly International Rectifier) | Infineon Technologies |
| Part Number Suffix | PbF (lead-free, RoHS compliant) | — |
| ट्रांज़िस्टर प्रकार | N-Channel MOSFET | N-Channel MOSFET |
| Technology | HEXFET (Stripe Planar cell structure) | StrongIRFET |
| Drain-Source Voltage (V_DS) | 55 V | — |
| Continuous Drain Current (I_D, Tc=25C) | 169 A | — |
| Continuous Drain Current (I_D, Tc=100C) | [DATA_NEEDED: I_D at Tc=100C] | — |
| Pulsed Drain Current (I_DM) | [DATA_NEEDED: pulsed drain current rating] | — |
| Maximum Power Dissipation (P_D, Tc=25C) | 330 W | — |
| R_DS(on) Maximum | 5.3 mOhm @ V_GS = 10 V | — |
| Gate Threshold Voltage (V_GS(th)) | 2.0 V to 4.0 V | — |
| Maximum Gate-Source Voltage (V_GS) | [DATA_NEEDED: maximum V_GS rating] | — |
| Operating Junction Temperature (T_J max) | 175 C | — |
| Storage Temperature Range | [DATA_NEEDED: storage temperature range] | — |
| पैकेज | TO-220AB (through-hole) | TO-247-3 (PG-TO247-3) |
| माउंटिंग प्रकार | Through Hole | Through Hole |
| Qualification | JEDEC qualified, optimized for switching below 100 kHz | — |
| RoHS स्थिति | PbF suffix indicates lead-free / RoHS compliant | Compliant |
| Single Pulse Avalanche Energy (E_AS) | [DATA_NEEDED: avalanche energy rating] | — |
| Thermal Resistance Junction-to-Case (R_theta_JC) | [DATA_NEEDED: thermal resistance R_theta_JC] | — |
| Part Number | — | IRF150P220AKMA1 |
| Drain-Source Voltage (VDS max) | — | 150 V |
| Continuous Drain Current (ID) at Tc=25C | — | 203 A |
| On-Resistance (RDS(on) max) at VGS=10V | — | 2.7 mOhm |
| Gate-Source Voltage (VGS max) | — | [DATA_NEEDED: VGS max] |
| Gate Threshold Voltage (VGS(th) typ) | — | [DATA_NEEDED: VGS(th) typ] |
| Power Dissipation (Pd) at Tc=25C | — | 556 W |
| Power Dissipation (Pd) at Ta=25C | — | 3.8 W |
| ऑपरेटिंग तापमान रेंज | — | -55C to +175C |
| Terminal Finish | — | Tin (Sn) |
| JESD-609 Code | — | e3 |
| Lead-Free | — | Yes |