IRF150P220AKMA1 - 150V 203A StrongIRFET Power MOSFET | Infineon
MPN: IRF150P220AKMA1 ✓ Active| Qty | Unit Price | Extended |
|---|---|---|
| 1 | $5.63 | $5.63 |
| 10 | $5.07 | $50.70 |
| 100 | $4.51 | $451.00 |
| 500 | $3.95 | $1,975.00 |
| 1,000 | $3.55 | $3,550.00 |
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View Datasheet →IRF150P220AKMA1 Maximum Ratings & Electrical Characteristics
| Manufacturer | Infineon Technologies |
| Part Number | IRF150P220AKMA1 |
| Technology | StrongIRFET |
| Transistor Type | N-Channel MOSFET |
| Drain-Source Voltage (VDS max) | 150 V |
| Continuous Drain Current (ID) at Tc=25C | 203 A |
| On-Resistance (RDS(on) max) at VGS=10V | 2.7 mOhm |
| Power Dissipation (Pd) at Tc=25C | 556 W |
| Power Dissipation (Pd) at Ta=25C | 3.8 W |
| Operating Temperature Range | -55C to +175C |
| Package | TO-247-3 (PG-TO247-3) |
| Mounting Type | Through Hole |
| Terminal Finish | Tin (Sn) |
| JESD-609 Code | e3 |
| RoHS Status | Compliant |
| Lead-Free | Yes |
IRF150P220AKMA1 Pin Configuration
| Pin 1 | Gate — MOSFET gate drive input |
| Pin 2 | Drain — MOSFET drain (also connected to metal tab) |
| Pin 3 | Source — MOSFET source |
Safe Operating Area (SOA) - DC
Typical Applications
IRF150P220AKMA1 is suitable for 6 applications: High-Current Synchronous Rectification, Brushless DC Motor Drives, Solar Inverter Power Stages, Uninterruptible Power Supplies (UPS), Industrial Switch-Mode Power Supplies (SMPS), Battery Protection and Load Switching.
High-Current Synchronous Rectification
The IRF150P220AKMA1 excels in secondary-side synchronous rectification in high-power telecom and server SMPS where 48V-100V rails must be rectified at 100A+ continuous current. With 2.7 mOhm RDS(on) and 150V VDS rating, it provides safe headroom above 100V rails while minimizing conduction loss (P = I^2 x R). At 100A load, conduction loss is only 27W per device - half that of competing 5 mOhm MOSFETs. The TO-247-3 package allows direct mounting to a heatsink with thermal compound, supporting the 556W power dissipation capability at elevated case temperatures. Compared to using Schottky diodes, two parallel IRF150P220AKMA1 devices cut rectifier losses by 70%, dramatically improving system efficiency at full load.
Recommended
Brushless DC Motor Drives
In 48V-96V brushless DC (BLDC) motor drives for industrial automation, robotics, and e-mobility, the IRF150P220AKMA1 serves as the low-side or high-side switch in three-phase inverter bridges. Its 203A continuous current capability easily handles motor inrush and stall conditions, while the 150V VDS rating tolerates back-EMF spikes from aggressive deceleration. The 2.7 mOhm RDS(on) keeps conduction loss under 15W per switch at 75A continuous motor current, limiting heatsink size. StrongIRFET technology provides the avalanche energy rating needed for motor regenerative braking events, where the body diode must absorb energy during freewheeling. The TO-247-3 package is industry-standard for motor drive modules, simplifying mechanical integration.
Recommended
Solar Inverter Power Stages
The IRF150P220AKMA1 is well-suited for string inverters and central solar inverters where 100V-150V PV input is converted to grid-tie AC. Acting as the primary-side switch in a boost PFC or full-bridge topology, the 150V VDS rating covers open-circuit PV voltages up to 145V (including cold-temperature Voc rise). The 2.7 mOhm RDS(on) yields >98.5% efficiency at typical 50A operating current, critical for solar inverter cost-per-watt metrics. StrongIRFET avalanche capability absorbs the energy from PV panel capacitive discharge during switching transients. The TO-247-3 package and 556W power dissipation allow fan-less operation at 5kW power levels with proper heatsinking.
Recommended
Uninterruptible Power Supplies (UPS)
In online UPS systems rated 5kVA-20kVA, the IRF150P220AKMA1 functions as the battery-side switch in bidirectional converters and the inverter-stage switch for 48V/96V DC bus architectures. The 203A current capability supports battery discharge currents up to 5000W from a 24V battery stack, while the 150V VDS rating accommodates 96V DC bus systems with substantial transient margin. During grid-to-battery charging mode, low RDS(on) reduces heat generation, allowing smaller heatsinks. The avalanche rating protects against inductive kickback during abrupt load steps typical of UPS transfer events. The TO-247-3 through-hole package simplifies manufacturing and provides superior thermal performance for industrial UPS enclosures.
Recommended
Industrial Switch-Mode Power Supplies (SMPS)
For high-power industrial SMPS in the 3kW-10kW range, the IRF150P220AKMA1 is an excellent primary-side switch in full-bridge or half-bridge topologies operating from 200-400V rectified DC. The 150V VDS rating is suitable for 96V input stages, while multiple devices in series can be used for higher-voltage applications. The 2.7 mOhm RDS(on) translates to 75% lower conduction loss vs. older-generation 10 mOhm MOSFETs at the same current, allowing higher switching frequencies (up to 100kHz) without thermal runaway. StrongIRFET technology provides the ruggedness required for industrial environments with frequent load transients and short-circuit events, where the device must survive unclamped inductive switching (UIS) tests.
Recommended
Battery Protection and Load Switching
In 48V-96V battery packs for e-mobility, telecom backup, and energy storage systems (ESS), the IRF150P220AKMA1 functions as a high-side disconnect switch, pre-charge MOSFET, or active balancing element. Its 203A continuous rating handles peak discharge currents during high-power demand events, while the 2.7 mOhm RDS(on) minimizes voltage drop across the protection path - critical for accurate battery monitoring and maximizing usable capacity. The 150V VDS rating tolerates transients from inductive loads and DC bus capacitors during switching. The TO-247-3 package allows straightforward integration into battery management system (BMS) assemblies with standard heatsink mounting.
Recommended
Recommended Products Summary
Engineering reference data for IRF150P220AKMA1 — comparison, design guidance, and compliance information.
Selection Guide
Comparison with Alternatives
| Parameter | This Product | IRF150P220 | IRFP2907PBF | IRFP250MPBF | IRF1405PBF | IRFB4110PBF |
|---|---|---|---|---|---|---|
| Package | TO-247-3 | TO-247-3 | TO-247-3 | TO-247-3 | TO-247-3 | TO-247-3 |
| Brand | Infineon Technologies | Infineon Technologies | Infineon Technologies | Infineon Technologies | Infineon Technologies | Infineon Technologies |
| Drain-Source Voltage (VDS) | 150 V | 150 V | 75 V | 200 V | 55 V | 100 V |
| Continuous Drain Current (ID) | 203 A | 203 A | 209 A | 30 A | 169 A | 180 A |
| On-Resistance (RDS(on) max) | 2.7 mOhm | 2.7 mOhm | 4.5 mOhm | 75 mOhm | 5.3 mOhm | 3.7 mOhm |
| Power Dissipation (Tc=25C) | 556 W | 556 W | 470 W | 200 W | 330 W | 370 W |
| Technology Family | StrongIRFET | StrongIRFET | HEXFET | HEXFET | HEXFET | HEXFET |
| Typical Price (qty 1) | $5.63 | ~$5.00 | ~$3.50 | ~$2.80 | ~$3.20 | ~$4.00 |
Key Differentiators
- Highest current capability in 150V TO-247 class from Infineon (vs IRFB4110PBF)
- StrongIRFET trench technology vs older HEXFET planar (vs IRFP2907PBF)
- Tab connected to Drain (Infineon convention) for clean gate drive return (vs IRFP250MPBF)
Design Notes
At continuous 200A operation with 2.7 mOhm RDS(on), conduction loss is approximately 108W. Use a TO-247 heatsink rated for 2 C/W or better (e.g., Fischer SK129 or Aavid 531102B02500). Apply thermal compound (Wakefield 120-2 or similar) with 5-7 mil bondline thickness. Mount torque 0.7-0.9 N-m to avoid case cracking. Forced-air cooling at 200 LFM reduces thermal resistance by 30-40%. Estimate: RthJA = RthJC + RthCS + RthSA. For junction temp calculation, P_total = I^2 x RDS(on) x 1.3 (including switching loss factor) at 20 kHz. With 100A load and 150V bus: P ~ 13W per device, well within TO-247 capability even with passive cooling.
Minimize the high-current loop area between drain-source switching node and the gate drive return. Keep gate drive traces short and use a Kelvin connection to the source pin where possible. Use 2 oz copper on inner layers for 100A+ current paths. Place gate-source 10kohm pull-down resistor and 100ohm series gate resistor within 5mm of the gate pin to prevent parasitic oscillation. For parallel operation, ensure symmetric PCB layout and use individual gate resistors for each device to prevent current imbalance. Estimated: trace inductance of 10mm x 2mm trace ~ 7 nH, which at 1000 A/us di/dt produces 7V spike - derate switching speed or add snubber.
Do not exceed VGS=20V absolute maximum - use a 15V Zener gate protection clamp. The body diode has limited reverse recovery; in bridge topologies use schottky or SiC anti-parallel diodes to prevent shoot-through. Verify VDS margin: for a 96V nominal bus, transient ringing can reach 130V - keep below 150V max rating. When using multiple in parallel, gate resistors (5-10 ohm each) prevent oscillation. Do not rely on the metal tab for source connection in TO-247 -3 (Infineon TO-247-3 has tab connected to DRAIN, unlike some competitors where tab is source).
Compliance Information
RoHS compliant per Infineon product page. JESD-609 Code e3 (tin finish) confirms lead-free. Not AEC-Q100 qualified - this is an industrial-grade part. Halogen-free status not explicitly stated in retrieved data.
