IRF1407PBF vs IRF1010NPBF-VB Comparison
Detailed side-by-side comparison of IRF1407PBF by Infineon and IRF1010NPBF-VB by VBsemi Elec. Compare key specifications, electrical parameters, packaging, lifecycle status, pricing, and availability to determine the best component for your design requirements.
Specification Comparison
| Parameter | IRF1407PBF | IRF1010NPBF-VB |
|---|---|---|
| Brand | Infineon | VBsemi Elec |
| Category | MOSFETs | MOSFETs |
| Lifecycle Status | Active | Active |
| Stock Status | In Stock | In Stock |
| Unit Price (USD) | $0.86 | $0.25 |
| FET Type | N-Channel | — |
| Technology | HEXFET (stripe-planar MOSFET) | — |
| Drain-Source Voltage (VDS) | 75 V | — |
| Continuous Drain Current (ID) at TC=25C | 130 A | — |
| Pulsed Drain Current (IDM) | [DATA_NEEDED: pulsed drain current] | — |
| Power Dissipation (PD) at TC=25C | 330 W | — |
| On-Resistance RDS(on) at VGS=10V | 7.8 mOhm (typical) | — |
| Gate-Source Threshold Voltage (VGS(th)) | [DATA_NEEDED: VGS threshold typical/min/max] | — |
| Gate Charge (Qg) | 160 nC (typical) | — |
| Maximum Junction Temperature | 175 C | — |
| Operating Temperature Range | -55 C to +175 C | — |
| Package | TO-220AB (through-hole, 3 leads) | TO-220AB (Through Hole) |
| Mounting Type | Through Hole | Through Hole |
| Lead-Free / RoHS | Lead-free, RoHS compliant (PBF suffix) | — |
| Avalanche Rating | Repetitive avalanche rated | — |
| Transistor Polarity | — | N-Channel |
| Drain-Source Voltage VDSS | — | 55 V |
| Continuous Drain Current ID | — | 85 A (Tc) |
| Power Dissipation PD | — | 180 W (Tc) |
| On-Resistance RDS(on) | — | 0.014 Ohm (14 mOhm) |
| Total Gate Charge Qg | — | 80 nC |
| Gate-Source Voltage VGSS | — | +/-20 V |
| Operating Mode | — | Enhancement |
| Number of Channels | — | 1 |
| Configuration | — | Single FET |
| Process Technology | — | Planar HEXFET, Advanced Process Technology |
| Recommended Switching Frequency | — | Below 100 kHz |
| Market Qualification | — | Industrial |
| RoHS Status | — | Compliant (Pb-free suffix) |