IRF1407PBF vs IRF1010NPBF-VB 比較
詳細な並列比較: IRF1407PBF メーカー: Infineon および IRF1010NPBF-VB メーカー: VBsemi Elec。主要仕様、電気的特性、パッケージ、ライフサイクルステータス、価格、在庫状況を比較して、設計要件に最適な部品を判断してください。
仕様比較
| パラメータ | IRF1407PBF | IRF1010NPBF-VB |
|---|---|---|
| ブランド | Infineon | VBsemi Elec |
| カテゴリ | MOSFETs | MOSFETs |
| ライフサイクル状態 | 有効 | 有効 |
| 在庫状況 | In Stock | In Stock |
| 単価（USD） | $0.86 | $0.25 |
| FET Type | N-Channel | — |
| Technology | HEXFET (stripe-planar MOSFET) | — |
| Drain-Source Voltage (VDS) | 75 V | — |
| Continuous Drain Current (ID) at TC=25C | 130 A | — |
| Pulsed Drain Current (IDM) | [DATA_NEEDED: pulsed drain current] | — |
| Power Dissipation (PD) at TC=25C | 330 W | — |
| On-Resistance RDS(on) at VGS=10V | 7.8 mOhm (typical) | — |
| Gate-Source Threshold Voltage (VGS(th)) | [DATA_NEEDED: VGS threshold typical/min/max] | — |
| Gate Charge (Qg) | 160 nC (typical) | — |
| Maximum Junction Temperature | 175 C | — |
| 動作温度範囲 | -55 C to +175 C | — |
| パッケージ | TO-220AB (through-hole, 3 leads) | TO-220AB (Through Hole) |
| 実装タイプ | Through Hole | Through Hole |
| Lead-Free / RoHS | Lead-free, RoHS compliant (PBF suffix) | — |
| Avalanche Rating | Repetitive avalanche rated | — |
| Transistor Polarity | — | N-Channel |
| Drain-Source Voltage VDSS | — | 55 V |
| Continuous Drain Current ID | — | 85 A (Tc) |
| Power Dissipation PD | — | 180 W (Tc) |
| On-Resistance RDS(on) | — | 0.014 Ohm (14 mOhm) |
| Total Gate Charge Qg | — | 80 nC |
| Gate-Source Voltage VGSS | — | +/-20 V |
| Operating Mode | — | Enhancement |
| Number of Channels | — | 1 |
| Configuration | — | Single FET |
| Process Technology | — | Planar HEXFET, Advanced Process Technology |
| Recommended Switching Frequency | — | Below 100 kHz |
| Market Qualification | — | Industrial |
| RoHS ステータス | — | Compliant (Pb-free suffix) |