IRF1407PBF vs IRF1010NPBF-VB Vergleich

Detaillierter Direktvergleich von IRF1407PBF von Infineon und IRF1010NPBF-VB von VBsemi Elec. Vergleichen Sie die wichtigsten Spezifikationen, elektrischen Parameter, Gehäuse, Lebenszyklusstatus, Preise und Verfügbarkeit, um das beste Bauteil für Ihre Designanforderungen zu ermitteln.

VBsemi Elec
IRF1010NPBF-VB IRF1010NPBF-VB - 55V 85A N-Channel Power MOSFET | VBsemi

IRF1010NPBF-VB - 55V 85A N-Channel Power MOSFET | VBsemi

IRF1010NPBF-VB ✓ Aktiv

Spezifikationsvergleich

Parameter IRF1407PBF IRF1010NPBF-VB
Marke Infineon VBsemi Elec
Kategorie MOSFETs MOSFETs
Lebenszyklusstatus Aktiv Aktiv
Lagerstatus In Stock In Stock
Stückpreis (USD) $0,86 $0,25
FET Type N-Channel —
Technology HEXFET (stripe-planar MOSFET) —
Drain-Source Voltage (VDS) 75 V —
Continuous Drain Current (ID) at TC=25C 130 A —
Pulsed Drain Current (IDM) [DATA_NEEDED: pulsed drain current] —
Power Dissipation (PD) at TC=25C 330 W —
On-Resistance RDS(on) at VGS=10V 7.8 mOhm (typical) —
Gate-Source Threshold Voltage (VGS(th)) [DATA_NEEDED: VGS threshold typical/min/max] —
Gate Charge (Qg) 160 nC (typical) —
Maximum Junction Temperature 175 C —
Betriebstemperaturbereich -55 C to +175 C —
Gehäuse TO-220AB (through-hole, 3 leads) TO-220AB (Through Hole)
Montageart Through Hole Through Hole
Lead-Free / RoHS Lead-free, RoHS compliant (PBF suffix) —
Avalanche Rating Repetitive avalanche rated —
Transistor Polarity — N-Channel
Drain-Source Voltage VDSS — 55 V
Continuous Drain Current ID — 85 A (Tc)
Power Dissipation PD — 180 W (Tc)
On-Resistance RDS(on) — 0.014 Ohm (14 mOhm)
Total Gate Charge Qg — 80 nC
Gate-Source Voltage VGSS — +/-20 V
Operating Mode — Enhancement
Number of Channels — 1
Configuration — Single FET
Process Technology — Planar HEXFET, Advanced Process Technology
Recommended Switching Frequency — Below 100 kHz
Market Qualification — Industrial
RoHS-Status — Compliant (Pb-free suffix)

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