IRF3007STRLPBF vs IPB019N08N3GATMA1 Comparison

Detailed side-by-side comparison of IRF3007STRLPBF by Infineon and IPB019N08N3GATMA1 by Infineon. Compare key specifications, electrical parameters, packaging, lifecycle status, pricing, and availability to determine the best component for your design requirements.

Specification Comparison

Parameter IRF3007STRLPBF IPB019N08N3GATMA1
Brand Infineon Infineon
Category MOSFETs MOSFETs
Lifecycle Status Active Active
Polarity N-Channel —
MOSFET Operating Mode Enhancement —
Drain-to-Source Breakdown Voltage (V(BR)DSS) 75 V —
Continuous Drain Current (Id) at Tc=25°C 62 A —
Pulsed Drain Current (Idm) 250 A —
Static Drain-to-Source On-Resistance (RDS(on)) 12.6 mΩ typical at VGS=10V —
Gate-to-Source Threshold Voltage (VGS(th)) 2.0 V to 4.0 V —
Total Gate Charge (Qg) 110 nC typical —
Maximum Power Dissipation (Pd) 120 W at Tc=25°C —
Operating Junction Temperature -55°C to +175°C —
Thermal Resistance Junction-to-Case (RθJC) 1.0 °C/W —
Thermal Resistance Junction-to-Ambient (RθJA) 40 °C/W —
Package Type D2PAK (TO-263), 3-pin (2+Tab), Surface Mount —
Mounting Type Surface Mount Surface Mount
RoHS Status Compliant (Lead-Free, PBF suffix) Compliant
Avalanche Rated Yes (Repetitive Avalanche Allowed up to Tjmax) —
Manufacturer — Infineon Technologies
Series — OptiMOS 3
FET Type — N-Channel
Technology — MOSFET (Metal Oxide)
Drain-to-Source Voltage (Vdss) — 80 V
Continuous Drain Current (Id) @ Tc=25°C — 180 A
Power Dissipation (Pd) @ Tc=25°C — 300 W
On-Resistance RDS(on) Max @ VGS=10V — 1.9 mΩ
Gate Threshold Voltage (Vgs(th)) — 3.5 V
Drive Voltage (Rds On Max) — 6 V, 10 V
Total Gate Charge (Qg) @ VGS=10V — 206 nC
Input Capacitance (Ciss) — 14.2 nF
Output Capacitance (Coss) — 3.84 nF
Reverse Transfer Capacitance (Crss) — 3.84 nF
Operating Temperature Range — -55 °C to +175 °C
Package — PG-TO263-7 (D2PAK-6, surface mount)

Datasheets & Resources

Browse All Products Create BOM Request Quote