IRF3007STRLPBF vs IPB019N08N3GATMA1 比較

詳細並排比較 IRF3007STRLPBF 由 Infineon 與 IPB019N08N3GATMA1 由 Infineon. 比較關鍵規格、電氣參數、封裝、生命週期狀態、價格與供貨情況,以找出最符合您設計需求的元件。

Infineon
IRF3007STRLPBF IRF3007STRLPBF - 75V N-Channel MOSFET, 62A, D2PAK | Infineon

IRF3007STRLPBF - 75V N-Channel MOSFET, 62A, D2PAK | Infineon

IRF3007STRLPBF ✓ 啟用中

規格比較

參數 IRF3007STRLPBF IPB019N08N3GATMA1
品牌 Infineon Infineon
類別 MOSFETs MOSFETs
生命週期狀態 啟用中 啟用中
Polarity N-Channel —
MOSFET Operating Mode Enhancement —
Drain-to-Source Breakdown Voltage (V(BR)DSS) 75 V —
Continuous Drain Current (Id) at Tc=25°C 62 A —
Pulsed Drain Current (Idm) 250 A —
Static Drain-to-Source On-Resistance (RDS(on)) 12.6 mΩ typical at VGS=10V —
Gate-to-Source Threshold Voltage (VGS(th)) 2.0 V to 4.0 V —
Total Gate Charge (Qg) 110 nC typical —
Maximum Power Dissipation (Pd) 120 W at Tc=25°C —
工作接面溫度 -55°C to +175°C —
Thermal Resistance Junction-to-Case (RθJC) 1.0 °C/W —
Thermal Resistance Junction-to-Ambient (RθJA) 40 °C/W —
Package Type D2PAK (TO-263), 3-pin (2+Tab), Surface Mount —
安裝類型 Surface Mount Surface Mount
RoHS 狀態 Compliant (Lead-Free, PBF suffix) Compliant
Avalanche Rated Yes (Repetitive Avalanche Allowed up to Tjmax) —
Manufacturer — Infineon Technologies
Series — OptiMOS 3
FET Type — N-Channel
Technology — MOSFET (Metal Oxide)
Drain-to-Source Voltage (Vdss) — 80 V
Continuous Drain Current (Id) @ Tc=25°C — 180 A
Power Dissipation (Pd) @ Tc=25°C — 300 W
On-Resistance RDS(on) Max @ VGS=10V — 1.9 mΩ
Gate Threshold Voltage (Vgs(th)) — 3.5 V
Drive Voltage (Rds On Max) — 6 V, 10 V
Total Gate Charge (Qg) @ VGS=10V — 206 nC
Input Capacitance (Ciss) — 14.2 nF
Output Capacitance (Coss) — 3.84 nF
Reverse Transfer Capacitance (Crss) — 3.84 nF
工作溫度範圍 — -55 °C to +175 °C
封裝 — PG-TO263-7 (D2PAK-6, surface mount)

資料表與資源

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