IRF3205ZSTRLPBF vs IRF1010ZPBF Comparison

Detailed side-by-side comparison of IRF3205ZSTRLPBF by Infineon and IRF1010ZPBF by Infineon. Compare key specifications, electrical parameters, packaging, lifecycle status, pricing, and availability to determine the best component for your design requirements.

Specification Comparison

Parameter IRF3205ZSTRLPBF IRF1010ZPBF
Brand Infineon Infineon
Category MOSFETs MOSFETs
Lifecycle Status Active Active
Stock Status In Stock In Stock
Unit Price (USD) $1.45 $1.36
FET Type N-Channel —
Technology HEXFET (IR MOSFET) —
Drain-Source Voltage (VDS) 55 V —
Continuous Drain Current (ID) at Tc=25C 110 A —
Continuous Drain Current (ID) at Tc=100C [DATA_NEEDED: ID at Tc=100C] —
Pulsed Drain Current (IDM) [DATA_NEEDED: IDM] —
On-Resistance RDS(on) max @ VGS=10V 6.5 mOhm —
Gate-Source Voltage (VGS) max +/- 20 V —
Gate Threshold Voltage (VGS(th)) [DATA_NEEDED: VGS(th)] —
Total Gate Charge (Qg) 76 nC 63 nC (typ, per Mouser listing)
Power Dissipation (PD) at Tc=25C 170 W —
Operating Junction Temperature -55C to +175C —
Package D2PAK (TO-263) TO-220AB (3-pin + tab), Through Hole
Mounting Type Surface Mount Through Hole
Packaging Tape & Reel (left reel) —
RoHS Status Compliant Compliant (PBF = Pb-free)
MSL Level 1 —
Body Diode Avalanche-rated intrinsic —
Polarity — N-Channel
Drain-Source Voltage (Vdss) — 55 V
Continuous Drain Current (Id) at Tc — 75 A (Tc=25C)
Power Dissipation (Pd) at Tc — 140 W (Tc=25C)
On-Resistance (Rds on) Max — [DATA_NEEDED: Rds(on) max at 10V] (typ approx. 7.5 mOhm per Mouser listing)
MOSFET Operating Mode — Enhancement
Configuration — Single MOSFET
Maximum Junction Temperature — 175 C
Qualification — JEDEC industry standard qualification
Avalanche Rating — Improved repetitive avalanche rated
Lead Status — Lead Free
Gate Threshold Voltage (Vgs th) — [DATA_NEEDED: gate threshold voltage range]

Datasheets & Resources

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