IRF3205ZSTRLPBF vs IRF1010ZPBF Vergleich

Detaillierter Direktvergleich von IRF3205ZSTRLPBF von Infineon und IRF1010ZPBF von Infineon. Vergleichen Sie die wichtigsten Spezifikationen, elektrischen Parameter, Gehäuse, Lebenszyklusstatus, Preise und Verfügbarkeit, um das beste Bauteil für Ihre Designanforderungen zu ermitteln.

Spezifikationsvergleich

Parameter IRF3205ZSTRLPBF IRF1010ZPBF
Marke Infineon Infineon
Kategorie MOSFETs MOSFETs
Lebenszyklusstatus Aktiv Aktiv
Lagerstatus In Stock In Stock
Stückpreis (USD) $1,45 $1,36
FET Type N-Channel —
Technology HEXFET (IR MOSFET) —
Drain-Source Voltage (VDS) 55 V —
Continuous Drain Current (ID) at Tc=25C 110 A —
Continuous Drain Current (ID) at Tc=100C [DATA_NEEDED: ID at Tc=100C] —
Pulsed Drain Current (IDM) [DATA_NEEDED: IDM] —
On-Resistance RDS(on) max @ VGS=10V 6.5 mOhm —
Gate-Source Voltage (VGS) max +/- 20 V —
Gate Threshold Voltage (VGS(th)) [DATA_NEEDED: VGS(th)] —
Total Gate Charge (Qg) 76 nC 63 nC (typ, per Mouser listing)
Power Dissipation (PD) at Tc=25C 170 W —
Betriebs-Sperrschichttemperatur -55C to +175C —
Gehäuse D2PAK (TO-263) TO-220AB (3-pin + tab), Through Hole
Montageart Surface Mount Through Hole
Packaging Tape & Reel (left reel) —
RoHS-Status Compliant Compliant (PBF = Pb-free)
MSL-Level 1 —
Body Diode Avalanche-rated intrinsic —
Polarity — N-Channel
Drain-Source Voltage (Vdss) — 55 V
Continuous Drain Current (Id) at Tc — 75 A (Tc=25C)
Power Dissipation (Pd) at Tc — 140 W (Tc=25C)
On-Resistance (Rds on) Max — [DATA_NEEDED: Rds(on) max at 10V] (typ approx. 7.5 mOhm per Mouser listing)
MOSFET Operating Mode — Enhancement
Configuration — Single MOSFET
Maximum Junction Temperature — 175 C
Qualification — JEDEC industry standard qualification
Avalanche Rating — Improved repetitive avalanche rated
Lead Status — Lead Free
Gate Threshold Voltage (Vgs th) — [DATA_NEEDED: gate threshold voltage range]

Datenblätter & Ressourcen

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