IRF3205ZSTRLPBF - 55V 110A N-Channel HEXFET MOSFET | Infineon
MPN: IRF3205ZSTRLPBF β Active| Qty | Unit Price | Extended |
|---|---|---|
| 1 | $2.85 | $2.85 |
| 10 | $2.55 | $25.50 |
| 100 | $2.2 | $220.00 |
| 500 | $1.95 | $975.00 |
| 1,000 | $1.72 | $1,720.00 |
| 3,000 | $1.45 | $4,350.00 |
IRF3205ZSTRLPBF Overview
A power MOSFET (Metal-Oxide-Semiconductor Field-Effect Transistor) is a voltage-controlled three-terminal device (gate, drain, source) that switches or amplifies power in a system. N-channel MOSFETs are the workhorses of low-voltage, high-current switching because electron mobility is roughly 2-3x higher than hole mobility in silicon, giving lower RDS(on) for the same die area. They sit at the bottom of the power-management hierarchy: power MOSFET -> discrete semiconductor -> power switch -> power conversion building block.
Key features of the IRF3205ZSTRLPBF include 55 V drain-source breakdown, 110 A continuous drain current at 25 deg C case, a maximum RDS(on) of 6.5 mOhm at VGS = 10 V, total gate charge of 76 nC, and 170 W maximum power dissipation at Tc = 25 deg C. The D2PAK package provides a low thermal resistance path to the PCB copper pour, which is essential for sustained high-current operation. The Z-suffix variant of the IRF3205 family adds the latest-generation process improvements for lower conduction loss.
The internal HEXFET structure uses multiple paralleled N-channel cells to share current and reduce on-resistance, with the trench/planar process tuned for low gate charge and fast body-diode recovery. A low gate charge of 76 nC simplifies gate-driver design and minimizes switching losses at moderate PWM frequencies. The avalanche-rated body diode allows unclamped inductive switching events such as motor phase commutation and transformer demagnetization.
Typical applications for the IRF320ZSTRLPBF include high-current DC motor drives in e-bikes, power tools, robotics, and small EVs; synchronous-rectifier or low-side switch positions in 24 V / 48 V DC-DC buck converters; battery management for 12 V / 24 V lead-acid and Li-ion packs; solenoid and relay drivers; and industrial welding or plasma-cut pilot stages. It is widely used as a drop-in upgrade for older IRF3205 designs where lower RDS(on) and higher avalanche energy are desired.
When designing with this device, ensure the gate is driven to at least 10 V for full enhancement and that PCB copper area is sized to keep Tj below 150 deg C under worst-case load. A 10 kohm gate-source resistor is recommended to prevent unwanted turn-on from drain dv/dt induced Miller coupling, and a TVS clamp across the drain-source path is advisable for highly inductive loads.
This page synthesizes distributor pricing, drop-in alternatives, and practical design notes not found in the manufacturer datasheet, giving engineers a one-stop reference for BOM decision-making.
Drop-in alternatives for IRF3205ZSTRLPBF β same package, pin-to-pin compatible. Different-package parts requiring PCB rework are excluded.
Variants in this series
Same-series models that are drop-in compatible with IRF3205ZSTRLPBF (same form factor and footprint) β differing in Drain-Source Voltage (VDS), Mounting Type, Lead-Free / RoHS, MSL Level, On-Resistance RDS(on) max @ VGS=10V.
Quick Comparison Tool β Select alternative parts for side-by-side comparison:
AUIRF3205ZSTRL
β Drop-Inπ Reference alternative (not in catalog)
IRF3205ZS
β Drop-Inπ Reference alternative (not in catalog)
IRF3205ZLPBF
β Drop-Inπ Reference alternative (not in catalog)
IRFB3207ZPBF
β Drop-In β οΈ εζ°εΎ ιͺθ―β In Stock
$1.62 / Unit
View Datasheet βIRLB4132PBF
β Drop-In β οΈ εζ°εΎ ιͺθ―β In Stock
$0.62 / Unit
View Datasheet βHUF75345S3ST
β Drop-Inπ Reference alternative (not in catalog)
STP55NF06
β Drop-Inπ Reference alternative (not in catalog)
IRF3205ZSTRLPBF Maximum Ratings & Electrical Characteristics
| FET Type | N-Channel |
| Technology | HEXFET (IR MOSFET) |
| Drain-Source Voltage (VDS) | 55 V |
| Continuous Drain Current (ID) at Tc=25C | 110 A |
| On-Resistance RDS(on) max @ VGS=10V | 6.5 mOhm |
| Gate-Source Voltage (VGS) max | +/- 20 V |
| Total Gate Charge (Qg) | 76 nC |
| Power Dissipation (PD) at Tc=25C | 170 W |
| Operating Junction Temperature | -55C to +175C |
| Package | D2PAK (TO-263) |
| Mounting Type | Surface Mount |
| Packaging | Tape & Reel (left reel) |
| RoHS Status | Compliant |
| MSL Level | 1 |
| Body Diode | Avalanche-rated intrinsic |
IRF3205ZSTRLPBF Pin Configuration
| Pin 1 | Gate β Gate control input; drive to 10 V for full enhancement |
| Pin 2 | Drain β Drain terminal; also tied to the back-side metal tab (thermal pad) |
| Pin 3 | Source β Source terminal; low-side reference for gate drive |
Safe Operating Area (SOA) - IRF3205ZSTRLPBF
Typical Applications
IRF3205ZSTRLPBF is suitable for 7 applications: E-Bike and E-Scooter Motor Control, Synchronous Rectifier in 24 V DC-DC Buck Converters, Battery Management and BMS Discharge Control, Power Tool and Cordless Drill Motor Drive, Industrial Solenoid and Relay Driver, Solar Charge Controller and Load Switch, Inverter Welding Pilot and Plasma Cut Trigger.
E-Bike and E-Scooter Motor Control
The IRF3205ZSTRLPBF fits 24 V / 36 V e-bike motor controllers because its 55 V VDS provides 13 V headroom above a fully-charged 42 V Li-ion pack, while 110 A continuous ID supports 500-1500 W BLDC or brushed-DC motor stages. The 6.5 mOhm RDS(on) at VGS=10 V keeps conduction loss around 79 W at 110 A, which the D2PAK thermal pad dissipates via a 1 sq-in copper pour without forced air. Infineon's HEXFET process delivers fast switching for 20-50 kHz PWM at modest gate-driver cost (a single IR2104 half-bridge driver is sufficient).
Recommended
Synchronous Rectifier in 24 V DC-DC Buck Converters
In a 24 V-to-12 V or 24 V-to-5 V synchronous buck converter, the IRF3205ZSTRLPBF can serve as the low-side synchronous rectifier MOSFET, taking advantage of its 6.5 mOhm RDS(on) and 76 nC total gate charge. The low Qg simplifies gate-driver losses at switching frequencies up to 100 kHz, while the 55 V VDS rating comfortably handles a 24 V nominal bus with transients to 36 V. The avalanche-rated body diode supports dead-time conduction without requiring an external Schottky clamp, lowering BOM cost.
Recommended
Battery Management and BMS Discharge Control
The IRF3205ZSTRLPBF can act as the main discharge-path MOSFET in 12 V / 24 V lead-acid or Li-ion battery management systems, where its 110 A ID rating covers heavy inrush from inverters and motor starters. The 6.5 mOhm on-resistance keeps voltage drop under 50 mV at 50 A continuous discharge, preserving battery capacity and reducing thermal stress. Its 55 V VDS comfortably exceeds 24 V pack voltages, and the 175C Tj rating supports under-hood automotive environments when paired with the AUIRF3205ZSTRL Q-100 variant.
Recommended
Power Tool and Cordless Drill Motor Drive
The IRF3205ZSTRLPBF suits 18 V / 20 V cordless power-tool motor drives because its 6.5 mOhm RDS(on) at VGS=10 V keeps conduction loss low during stall conditions where motor current can spike to 100 A peak. The 55 V VDS rating handles 20 V Li-ion pack transients with margin, and the D2PAK package's exposed thermal pad enables PCB-side heat-sinking without a discrete heatsink. Pair with a small gate-driver IC for brushed-DC reverse-polarity switching, or two of these parts in half-bridge for brushless-DC tools.
Recommended
Industrial Solenoid and Relay Driver
The IRF3205ZSTRLPBF works as a low-side switch for 24 V industrial solenoids and large relay coils, replacing mechanical contactors with silent, arc-free solid-state switching. The 110 A ID rating exceeds typical solenoid inrush currents of 30-60 A, and the 6.5 mOhm RDS(on) minimizes steady-state dissipation when the solenoid is held. The avalanche-rated body diode absorbs flyback energy from the solenoid inductance, eliminating the need for an external freewheeling diode in many cases.
Recommended
Solar Charge Controller and Load Switch
The IRF3205ZSTRLPBF fits off-grid solar charge controllers as a load-disconnect or battery-charge path MOSFET for 12 V / 24 V lead-acid and Li-ion battery banks. Its 55 V VDS handles 24 V solar panel Voc transients with margin, while the 110 A ID rating supports 1.2-2 kW charge controllers. The 6.5 mOhm RDS(on) reduces self-consumption losses by 30-40% versus larger Rds-on alternatives, improving overall system efficiency in solar applications where every watt counts.
Recommended
Inverter Welding Pilot and Plasma Cut Trigger
The IRF3205ZSTRLPBF can drive the pilot-arc stage in low-power inverter welding machines and the trigger circuits in plasma-cut pilot stages, where its 55 V VDS and 110 A ID support 100-200 A pilot currents. The avalanche rating absorbs the inductive kick from the pilot transformer without requiring a snubber network, simplifying the power stage. The 76 nC Qg is low enough for 20-50 kHz PWM operation in some pilot-arc designs.
Recommended
Recommended Products Summary
Engineering reference data for IRF3205ZSTRLPBF β comparison, design guidance, and compliance information.
Selection Guide
Comparison with Alternatives
| Parameter | This Product | AUIRF3205ZSTRL | IRF3205ZS | IRF3205ZLPBF | IRFB3207ZPBF | HUF75345S3ST |
|---|---|---|---|---|---|---|
| Brand | Infineon | Infineon | Infineon | Infineon | Infineon | onsemi |
| Package | D2PAK (TO-263) SMD | D2PAK (TO-263) SMD - same | D2PAK (TO-263) SMD - same | TO-262 through-hole | TO-220 through-hole | D2PAK (TO-263) SMD - same |
| Drain-Source Voltage (VDS) | 55 V | 55 V | 55 V | 55 V | 75 V | 55 V |
| Continuous Drain Current (ID) | 110 A | 110 A | 110 A | 110 A | 120 A | 75 A |
| On-Resistance RDS(on) max @ VGS=10V | 6.5 mOhm | 6.5 mOhm | 6.5 mOhm | 6.5 mOhm | 5.7 mOhm | 9 mOhm |
| Power Dissipation (PD) | 170 W | 170 W | 170 W | 170 W | 300 W | 200 W |
| Automotive Grade (AEC-Q100) | No | Yes (AEC-Q100) | No | No | No | No |
Key Differentiators
- Z-suffix process upgrade over original IRF3205 (vs IRF3205PBF (classic))
- Same die available in AEC-Q100 automotive variant (vs IRFB3207ZPBF (TO-220 upgrade))
- D2PAK surface-mount for high-density designs (vs HUF75345S3ST (onsemi cross))
- Lower Qg enables higher switching frequency (vs IRFB3207ZPBF)
Design Notes
Estimated: At 110 A continuous drain current and 6.5 mOhm RDS(on), conduction loss is approximately P = I^2 x R = 110^2 x 0.0065 = 78.6 W. With the D2PAK package mounted on a 1 sq-in copper pour (theta_JA ~ 35 C/W), the junction-to-ambient temperature rise is about 78.6 x 35 = 2750 C/W equivalent. Sustained 110 A operation requires either a forced-air heatsink, liquid cooling, or significant derating. For continuous operation above 50 A, plan copper pours of at least 4 sq-in on both sides of the PCB, or use the through-hole IRF3205ZLPBF/IRFB3207ZPBF variants on a clip-mount heatsink.
Place the IRF3205ZSTRLPBF so the D2PAK thermal pad sits on a top-layer copper pour of at least 1 sq-in (645 sq-mm), with thermal vias to inner-layer copper spreading the heat. The gate-drive trace should be kept short and routed away from the drain switching node to minimize dv/dt-induced Miller turn-on. A 10 kohm gate-source resistor is mandatory to bleed off accumulated gate charge during off-state and to prevent false triggering. Add a 100 V TVS diode across drain-source for inductive loads that exceed the avalanche rating.
Do not operate the IRF3205ZSTRLPBF at VGS below 10 V for full-load switching - partial enhancement dramatically increases RDS(on) and causes thermal runaway. Do not exceed +/- 20 V on the gate, even briefly, or the gate oxide will fail. Do not parallel IRF3205ZSTRLPBFs without external gate-source balancing resistors, because matched RDS(on) is not guaranteed across units. Do not rely on the body diode for high-frequency synchronous-rectifier switching above 100 kHz without verifying reverse-recovery behavior in the datasheet.
Use a minimum of 2 oz copper (70 um) on the PCB layers carrying the IRF3205ZSTRLPBF drain and source traces, with thermal via arrays of 0.3 mm diameter spaced 1.2 mm apart under the D2PAK thermal pad. The recommended D2PAK footprint per IPC-7525 uses a 6.5 mm x 5.0 mm thermal pad with 8-12 thermal vias. Route the gate drive with a 0.2 mm-wide microstrip on the opposite side of the drain switching node, separated by a continuous ground plane for noise immunity.
Compliance Information
RoHS compliant per Infineon product page (PBF suffix indicates lead-free finish). AEC-Q100 not qualified for standard IRF3205ZSTRLPBF - choose AUIRF3205ZSTRL for automotive. REACH compliant per EU regulatory data.
