IRF4905LPBF vs IRFB3306PBF Comparison
Detailed side-by-side comparison of IRF4905LPBF by Infineon and IRFB3306PBF by Infineon. Compare key specifications, electrical parameters, packaging, lifecycle status, pricing, and availability to determine the best component for your design requirements.
Specification Comparison
| Parameter | IRF4905LPBF | IRFB3306PBF |
|---|---|---|
| Brand | Infineon | Infineon |
| Category | MOSFETs | MOSFETs |
| Lifecycle Status | Active | Active |
| Polarity | P-Channel | — |
| Drain-Source Voltage (Vds) | -55 V | — |
| Continuous Drain Current (Id) @ Tc=25C | -74 A | — |
| Pulsed Drain Current (Idm) | [DATA_NEEDED: pulsed drain current] | [DATA_NEEDED: pulsed drain current] |
| On-Resistance Rds(on) max @ Vgs=-10V | 20 mOhm | — |
| Gate Threshold Voltage Vgs(th) typ | [DATA_NEEDED: Vgs(th) typical] | — |
| Gate-Source Voltage (Vgs) max | ±20 V | ±20 V |
| Total Power Dissipation (Ptot) @ Tc=25C | 200 W | — |
| Operating Junction Temperature | -55C to +150C | -55°C to +175°C |
| Thermal Resistance Junction-to-Case (RthJC) | [DATA_NEEDED: RthJC value] | — |
| Rise Time (tr) typ | [DATA_NEEDED: rise time] | — |
| Fall Time (tf) typ | [DATA_NEEDED: fall time] | — |
| Package | TO-262 (I2PAK), through-hole, 3-pin | TO-220AB (through-hole) |
| Technology | HEXFET (IR MOSFET) | IR HEXFET (MOSFET) |
| Mounting Type | Through Hole | Through Hole |
| Lead-Free / RoHS | Yes (PbF suffix) | — |
| Avalanche Rated | Yes | Yes |
| FET Type | — | N-Channel |
| Drain-Source Voltage (Vdss) | — | 60 V |
| Continuous Drain Current (Id) at Tc=25°C | — | 120 A |
| Rds(on) max @ Vgs=10V | — | 4.2 mΩ |
| Gate Threshold Voltage (Vgs(th)) | — | [DATA_NEEDED: Vgs(th) typical value] |
| Total Gate Charge (Qg) typ | — | [DATA_NEEDED: total gate charge Qg] |
| Gate-Drain Charge (Qgd) typ | — | 26 nC (nominal) |
| Power Dissipation (Pd) at Tc=25°C | — | 230 W |
| RoHS / Lead-Free (PbF) | — | Yes (PbF suffix indicates lead-free, RoHS compliant) |
| Body Diode | — | Intrinsic (avalanche-rated) |