IRF4905LPBF vs IRFB3306PBF Perbandingan
Perbandingan bersamaan detil IRF4905LPBF dari Infineon dan IRFB3306PBF dari Infineon. Bandingkan spesifikasi penting, parameter listrik, pengemasan, status cycle, harga, dan ketersediaan untuk menentukan komponen terbaik untuk kebutuhan desain Anda.
Perbandingan Spesifikasi
| Parameter Umum | IRF4905LPBF | IRFB3306PBF |
|---|---|---|
| Merek | Infineon | Infineon |
| Kategori | MOSFETs | MOSFETs |
| Status Lingkungan Hidup | Aktif | Aktif |
| Polarity | P-Channel | — |
| Drain-Source Voltage (Vds) | -55 V | — |
| Continuous Drain Current (Id) @ Tc=25C | -74 A | — |
| Pulsed Drain Current (Idm) | [DATA_NEEDED: pulsed drain current] | [DATA_NEEDED: pulsed drain current] |
| On-Resistance Rds(on) max @ Vgs=-10V | 20 mOhm | — |
| Gate Threshold Voltage Vgs(th) typ | [DATA_NEEDED: Vgs(th) typical] | — |
| Gate-Source Voltage (Vgs) max | ±20 V | ±20 V |
| Total Power Dissipation (Ptot) @ Tc=25C | 200 W | — |
| Suhu Hubung Kerja | -55C to +150C | -55°C to +175°C |
| Thermal Resistance Junction-to-Case (RthJC) | [DATA_NEEDED: RthJC value] | — |
| Rise Time (tr) typ | [DATA_NEEDED: rise time] | — |
| Fall Time (tf) typ | [DATA_NEEDED: fall time] | — |
| Paket | TO-262 (I2PAK), through-hole, 3-pin | TO-220AB (through-hole) |
| Technology | HEXFET (IR MOSFET) | IR HEXFET (MOSFET) |
| Tipe Mounting | Through Hole | Through Hole |
| Lead-Free / RoHS | Yes (PbF suffix) | — |
| Avalanche Rated | Yes | Yes |
| FET Type | — | N-Channel |
| Drain-Source Voltage (Vdss) | — | 60 V |
| Continuous Drain Current (Id) at Tc=25°C | — | 120 A |
| Rds(on) max @ Vgs=10V | — | 4.2 mΩ |
| Gate Threshold Voltage (Vgs(th)) | — | [DATA_NEEDED: Vgs(th) typical value] |
| Total Gate Charge (Qg) typ | — | [DATA_NEEDED: total gate charge Qg] |
| Gate-Drain Charge (Qgd) typ | — | 26 nC (nominal) |
| Power Dissipation (Pd) at Tc=25°C | — | 230 W |
| RoHS / Lead-Free (PbF) | — | Yes (PbF suffix indicates lead-free, RoHS compliant) |
| Body Diode | — | Intrinsic (avalanche-rated) |