IRF4905LPBF vs IRFB3306PBF Ikinahambing

Detalyadong pagkakahiwalay na pagkakahambing ng IRF4905LPBF sa pamamagitan ng Infineon at IRFB3306PBF sa pamamagitan ng Infineon. Ikinahambing ang mga pangunahing paglalarawan, mga tama ng elektriko, paakay, kalagayan ng buhay, presyo, at pagkakaroon upang makita ang pinakamahusay na komponente para sa iyong mga kinakailangang pang disenyo.

Pagsanggunian na paghahambing

Parametro IRF4905LPBF IRFB3306PBF
Brand Infineon Infineon
Kategorya MOSFETs MOSFETs
Katayuan ng Lifecycle Aktibo Aktibo
Polarity P-Channel —
Drain-Source Voltage (Vds) -55 V —
Continuous Drain Current (Id) @ Tc=25C -74 A —
Pulsed Drain Current (Idm) [DATA_NEEDED: pulsed drain current] [DATA_NEEDED: pulsed drain current]
On-Resistance Rds(on) max @ Vgs=-10V 20 mOhm —
Gate Threshold Voltage Vgs(th) typ [DATA_NEEDED: Vgs(th) typical] —
Gate-Source Voltage (Vgs) max ±20 V ±20 V
Total Power Dissipation (Ptot) @ Tc=25C 200 W —
Temperature ng Junction na Operasyon -55C to +150C -55°C to +175°C
Thermal Resistance Junction-to-Case (RthJC) [DATA_NEEDED: RthJC value] —
Rise Time (tr) typ [DATA_NEEDED: rise time] —
Fall Time (tf) typ [DATA_NEEDED: fall time] —
Packhaging TO-262 (I2PAK), through-hole, 3-pin TO-220AB (through-hole)
Technology HEXFET (IR MOSFET) IR HEXFET (MOSFET)
Uri ng Pagpapasok Through Hole Through Hole
Lead-Free / RoHS Yes (PbF suffix) —
Avalanche Rated Yes Yes
FET Type — N-Channel
Drain-Source Voltage (Vdss) — 60 V
Continuous Drain Current (Id) at Tc=25°C — 120 A
Rds(on) max @ Vgs=10V — 4.2 mΩ
Gate Threshold Voltage (Vgs(th)) — [DATA_NEEDED: Vgs(th) typical value]
Total Gate Charge (Qg) typ — [DATA_NEEDED: total gate charge Qg]
Gate-Drain Charge (Qgd) typ — 26 nC (nominal)
Power Dissipation (Pd) at Tc=25°C — 230 W
RoHS / Lead-Free (PbF) — Yes (PbF suffix indicates lead-free, RoHS compliant)
Body Diode — Intrinsic (avalanche-rated)

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