IRF520NPBF vs IRF530NSTRLPBF Comparison
Detailed side-by-side comparison of IRF520NPBF by Infineon and IRF530NSTRLPBF by Infineon. Compare key specifications, electrical parameters, packaging, lifecycle status, pricing, and availability to determine the best component for your design requirements.
Specification Comparison
| Parameter | IRF520NPBF | IRF530NSTRLPBF |
|---|---|---|
| Brand | Infineon | Infineon |
| Category | MOSFETs | MOSFETs |
| Lifecycle Status | Active | Active |
| Stock Status | In Stock | In Stock |
| Unit Price (USD) | $0.66 | $0.89 |
| Manufacturer | Infineon Technologies | β |
| Series | HEXFET | β |
| FET Type | N-Channel | β |
| Drain-to-Source Voltage (V_DSS) | 100 V | β |
| Continuous Drain Current (I_D) at Tc | 9.7 A | β |
| Pulsed Drain Current (I_DM) | [DATA_NEEDED: pulsed drain current value] | β |
| Gate-to-Source Voltage (V_GS) max | Β±20 V | β |
| R_DS(on) max at V_GS=10V | 200 mOhm | β |
| Total Gate Charge (Q_g) | 16.7 nC | β |
| Power Dissipation (P_D) at Tc | 48 W | β |
| Operating Temperature Range | -55C to +175C | -55C to +175C |
| Package | TO-220AB (through-hole) | β |
| Mounting Type | Through Hole | Surface Mount |
| MSL Level | 1 (unlimited) | β |
| RoHS Status | Compliant (Pb-free) | β |
| Lead-Free Finish | Yes (PBF suffix) | β |
| Technology | HEXFET (vertical DMOS) | HEXFET (Planar Stripe Cell) |
| Polarity | β | N-Channel |
| MOSFET Operating Mode | β | Enhancement |
| Drain-Source Breakdown Voltage (V(BR)DSS) | β | 100 V |
| Continuous Drain Current (ID) at Tc=25C | β | 17 A |
| Static Drain-Source On-Resistance (RDS(on)) max at VGS=10V | β | 90 mOhm |
| Total Gate Charge (Qg) | β | 24.7 nC |
| Power Dissipation (Pd) at Tc=25C | β | 70 W |
| Power Dissipation (Pd) at Ta=25C | β | 3.8 W |
| Gate-Source Voltage (VGS) max | β | +/- 20 V |
| Package Type | β | D2PAK (TO-263), 3-pin (2 + tab) |
| Lead-Free / RoHS Status | β | Lead-Free / RoHS Compliant |
| Qualification Market | β | Industrial |