IRF530NSTRLPBF - 100V 17A N-Channel HEXFET MOSFET | Infineon
MPN: IRF530NSTRLPBF ✓ Active| Qty | Unit Price | Extended |
|---|---|---|
| 1 | $1.85 | $1.85 |
| 10 | $1.62 | $16.20 |
| 100 | $1.38 | $138.00 |
| 500 | $1.18 | $590.00 |
| 1,000 | $1.02 | $1,020.00 |
| 3,000 | $0.89 | $2,670.00 |
Drop-in alternatives for IRF530NSTRLPBF — same package, pin-to-pin compatible. Different-package parts requiring PCB rework are excluded.
Quick Comparison Tool — Select alternative parts for side-by-side comparison:
IRF540NSTRLPBF
✅ Drop-In✓ In Stock
$0.74 / Unit
View Datasheet →IRF530NSTRRPBF
✅ Drop-In📋 Reference alternative (not in catalog)
IRF530NSPBF
✅ Drop-In ⚠️ 参数待验证📋 Reference alternative (not in catalog)
IRF520NPBF
✅ Drop-In ⚠️ 参数待验证✓ In Stock
$0.66 / Unit
View Datasheet →IRFZ44NPBF
✅ Drop-In ⚠️ 参数待验证✓ In Stock
$0.65 / Unit
View Datasheet →NTD4906N-1G
✅ Drop-In📋 Reference alternative (not in catalog)
IRF530NSTRLPBF Maximum Ratings & Electrical Characteristics
| Polarity | N-Channel |
| MOSFET Operating Mode | Enhancement |
| Drain-Source Breakdown Voltage (V(BR)DSS) | 100 V |
| Continuous Drain Current (ID) at Tc=25C | 17 A |
| Static Drain-Source On-Resistance (RDS(on)) max at VGS=10V | 90 mOhm |
| Total Gate Charge (Qg) | 24.7 nC |
| Power Dissipation (Pd) at Tc=25C | 70 W |
| Power Dissipation (Pd) at Ta=25C | 3.8 W |
| Gate-Source Voltage (VGS) max | +/- 20 V |
| Package Type | D2PAK (TO-263), 3-pin (2 + tab) |
| Mounting Type | Surface Mount |
| Technology | HEXFET (Planar Stripe Cell) |
| Operating Temperature Range | -55C to +175C |
| Lead-Free / RoHS Status | Lead-Free / RoHS Compliant |
| Qualification Market | Industrial |
IRF530NSTRLPBF Pin Configuration
| Pin 1 | Gate — Gate control input (drive to 10V for full enhancement) |
| Pin 2 | Drain — Drain terminal (electrically connected to rear tab/heat-sink pad) |
| Pin 3 | Source — Source terminal (return path for load current) |
Safe Operating Area (DC, TC=25C)
Typical Applications
IRF530NSTRLPBF is suitable for 6 applications: Switched-Mode Power Supply (SMPS), DC Motor Speed Control (PWM Drive), Uninterruptible Power Supply (UPS) Battery Switch, Solenoid and Relay Driver, Automotive 12V/24V Load Switching, Class-D Audio Amplifier Output Stage.
Switched-Mode Power Supply (SMPS)
The IRF530NSTRLPBF's 100V V(BR)DSS rating and 24.7 nC total gate charge make it well-suited as the main switching element in 48V-input telecom and industrial SMPS designs. Its 90 mOhm RDS(on) at VGS=10V balances conduction and switching losses in 100 kHz-class converters delivering 300-600W output. Compared to higher-RDS(on) parts, the IRF530N cuts conduction loss by roughly 30% at 10A load, reducing heatsink requirements.
Recommended
DC Motor Speed Control (PWM Drive)
In DC brushed motor speed controls, the IRF530NSTRLPBF serves as the low-side switching element in H-bridge or single-switch topologies. Its 17A continuous current rating covers motors up to approximately 200W at 12V or 400W at 24V, while the 100V breakdown easily tolerates back-EMF transients from inductive loads. The HEXFET planar technology gives fast switching edges, minimizing torque ripple and audible switching noise in PWM motor drives.
Recommended
Uninterruptible Power Supply (UPS) Battery Switch
The IRF530NSTRLPBF is deployed as a low-loss battery disconnect switch in UPS and solar battery backup systems. With 17A continuous rating and 100V VDS, it comfortably handles 48V battery banks at charge/discharge currents up to 17A (about 800W). Its low 90 mOhm RDS(on) keeps voltage drop under 1.5V at full load, preserving battery efficiency. The D2PAK surface-mount package allows automated assembly in volume production UPS modules.
Recommended
Solenoid and Relay Driver
Industrial solenoid valves, latching relays, and contactor coils are easily driven by the IRF530NSTRLPBF in low-side configurations. The 17A pulsed current capability handles inrush on large DC solenoids, while the 100V rating tolerates the flyback voltage generated when de-energizing inductive loads (a flyback/clamp diode is still required). The D2PAK tab provides the thermal capacity to handle repetitive switching transients in production automation lines.
Recommended
Automotive 12V/24V Load Switching
For automotive body electronics and 24V truck electrical systems, the IRF530NSTRLPBF switches lamps, motors, and resistive heaters with its 100V rating providing wide transient margin against load-dump surges. The 17A current rating covers high-power headlamps and seat-heater loads. While not AEC-Q100 qualified, the IRF530N is widely used in non-safety automotive applications where the operating temperature range of -55C to +175C exceeds typical automotive thermal requirements.
Recommended
Class-D Audio Amplifier Output Stage
In high-power Class-D audio amplifiers, the IRF530NSTRLPBF functions as a complementary switching element for the output bridge, particularly in 100V rails for pro-audio and subwoofer amplifiers. Its 24.7 nC gate charge enables fast switching at audio PWM frequencies (250-500 kHz), while the 90 mOhm RDS(on) minimizes output stage conduction losses for cooler operation. The D2PAK package handles the high peak currents (up to 68A pulsed per SOA) that bass transients demand.
Recommended
Recommended Products Summary
Engineering reference data for IRF530NSTRLPBF — comparison, design guidance, and compliance information.
Selection Guide
Comparison with Alternatives
| Parameter | This Product | IRF540NSTRLPBF | IRF530NSTRRPBF | IRF520NPBF | IRFZ44NPBF | NTD4906N-1G |
|---|---|---|---|---|---|---|
| Brand | Infineon Technologies | Infineon Technologies | Infineon Technologies | Infineon Technologies | Infineon Technologies | onsemi |
| Package | D2PAK (TO-263) | D2PAK (TO-263) - same | D2PAK (TO-263) - same | D2PAK (TO-263) - same | D2PAK (TO-263) - same | DPAK - compatible footprint |
| V(BR)DSS | 100 V | 100 V | 100 V | 100 V | 55 V | 60 V |
| Continuous Drain Current (ID) at Tc=25C | 17 A | 33 A | 17 A | 17 A | 49 A | 74 A |
| RDS(on) max at VGS=10V | 90 mOhm | 44 mOhm | 90 mOhm | 180 mOhm | 17.5 mOhm | 5.6 mOhm |
| Total Gate Charge (Qg) | 24.7 nC | 71 nC | 24.7 nC | 16 nC | 63 nC | 45 nC |
| Power Dissipation (Tc=25C) | 70 W | 130 W | 70 W | 60 W | 94 W | 75 W |
| Price (qty 1, USD, as of 2026-09-14) | 1.85 | 2.10 | 1.85 | 1.50 | 1.65 | 0.95 |
Key Differentiators
- Industry-standard 100V/17A/90mOhm baseline with proven HEXFET reliability (vs NTD4906N-1G (onsemi))
- Lower on-resistance than IRF520N at same voltage and current rating (vs IRF520NPBF (Infineon))
- Lower gate charge enables higher switching frequency than IRF540N (vs IRF540NSTRLPBF (Infineon))
Design Notes
Estimated: At full 17A load with 100V V(BR)DSS rating, the practical dissipation limit is set by PCB copper area. The D2PAK tab dissipates 70W only at Tc=25C; in practice the case temperature must be held below 100C for reliability, so design for case temperature <= 75C. Minimum 1 sq inch of 2 oz copper on the drain pad is recommended for continuous 30W operation, scaling up to 4-6 sq inches for the full 70W. Without adequate copper, expect to de-rate the IRF530NSTRLPBF to roughly 5-8A continuous current at ambient 25C.
Route the gate drive trace directly from the gate driver IC output to pin 1 (Gate) with minimum loop area. Use a 10-100 ohm gate resistor to damp ringing caused by the gate-source capacitance and the parasitic inductance of the gate-source loop. Place a 10 kohm gate-source pull-down resistor on every IRF530N to ensure the MOSFET stays off during controller startup, preventing accidental turn-on from Miller-induced dV/dt on the drain.
The IRF530NSTRLPBF is NOT a logic-level MOSFET: applying VGS=5V from a microcontroller GPIO will leave it partially enhanced with RDS(on) well above spec and likely in linear dissipation during switching. Use a dedicated gate driver (e.g. IRS2004STRPBF or TC4420) that swings the gate to at least 10V. Also verify VGS polarity: applying -10V to the gate can cause parametric drift over time even if absolute max +/-20V is respected.
Keep the high-current drain-source loop as physically small as possible to minimize parasitic inductance, which otherwise generates voltage spikes above 100V V(BR)DSS during turn-off and can destroy the device. In half-bridge or synchronous-rectifier topologies, use a low-ESR ceramic bypass capacitor (1-10 uF) right across the upper and lower MOSFET drain-source terminals of each phase leg. Add a TVS or RC snubber if reverse-recovery from the body diode causes excessive ringing.
Compliance Information
RoHS compliant and Pb-free (PBF suffix) per Infineon product designation. Qualified for industrial market per Infineon qualification standards. AEC-Q100 automotive qualification is NOT applicable - use Infineon automotive-grade parts for safety-critical automotive designs.
