IRF520NPBF vs IRF540NSTRLPBF Comparison
Detailed side-by-side comparison of IRF520NPBF by Infineon and IRF540NSTRLPBF by Infineon. Compare key specifications, electrical parameters, packaging, lifecycle status, pricing, and availability to determine the best component for your design requirements.
Specification Comparison
| Parameter | IRF520NPBF | IRF540NSTRLPBF |
|---|---|---|
| Brand | Infineon | Infineon |
| Category | MOSFETs | MOSFETs |
| Lifecycle Status | Active | Active |
| Stock Status | In Stock | In Stock |
| Unit Price (USD) | $0.66 | $0.74 |
| Manufacturer | Infineon Technologies | β |
| Series | HEXFET | β |
| FET Type | N-Channel | β |
| Drain-to-Source Voltage (V_DSS) | 100 V | β |
| Continuous Drain Current (I_D) at Tc | 9.7 A | β |
| Pulsed Drain Current (I_DM) | [DATA_NEEDED: pulsed drain current value] | β |
| Gate-to-Source Voltage (V_GS) max | Β±20 V | β |
| R_DS(on) max at V_GS=10V | 200 mOhm | β |
| Total Gate Charge (Q_g) | 16.7 nC | β |
| Power Dissipation (P_D) at Tc | 48 W | β |
| Operating Temperature Range | -55C to +175C | -55 C to +175 C |
| Package | TO-220AB (through-hole) | D2PAK (TO-263), surface mount |
| Mounting Type | Through Hole | Surface Mount |
| MSL Level | 1 (unlimited) | β |
| RoHS Status | Compliant (Pb-free) | Compliant (Pb-free) |
| Lead-Free Finish | Yes (PBF suffix) | β |
| Technology | HEXFET (vertical DMOS) | HEXFET (IR MOSFET) |
| Transistor Type | β | N-Channel MOSFET |
| Drain-Source Voltage (Vdss) | β | 100 V |
| Continuous Drain Current (Id) at Tc=25C | β | 33 A |
| Pulsed Drain Current (Idm) | β | 110 A (per datasheet pulse curve) |
| On-Resistance Rds(on) max at Vgs=10V | β | 44 mOhm |
| Gate Threshold Voltage Vgs(th) | β | 2.0 V to 4.0 V |
| Total Gate Charge Qg | β | 47.3 nC (typical) |
| Power Dissipation (Pd) at Tc=25C | β | 130 W |
| Packaging | β | Tape & Reel (13-inch reel) |
| Avalanche Energy Rated | β | Yes (HEXFET ruggedized) |