IRF540NSTRLPBF - 100V 33A N-Channel MOSFET D2PAK | Infineon
MPN: IRF540NSTRLPBF β Active| Qty | Unit Price | Extended |
|---|---|---|
| 1 | $1.71 | $1.71 |
| 10 | $1.42 | $14.20 |
| 100 | $1.05 | $105.00 |
| 500 | $0.86 | $430.00 |
| 1,000 | $0.74 | $740.00 |
Drop-in alternatives for IRF540NSTRLPBF β same package, pin-to-pin compatible. Different-package parts requiring PCB rework are excluded.
Quick Comparison Tool β Select alternative parts for side-by-side comparison:
IRF540NSTRRPBF
β Drop-Inπ Reference alternative (not in catalog)
IRF540NSPBF
β Drop-Inπ Reference alternative (not in catalog)
IRF2907ZSTRLPBF
β Drop-Inβ In Stock
$1.55 / Unit
View Datasheet βSTP55NF06L
β Drop-Inπ Reference alternative (not in catalog)
IRFZ44NSTRLPBF
β Drop-Inβ In Stock
$0.93 / Unit
View Datasheet βIRF540NSTRLPBF Maximum Ratings & Electrical Characteristics
| Transistor Type | N-Channel MOSFET |
| Technology | HEXFET (IR MOSFET) |
| Drain-Source Voltage (Vdss) | 100 V |
| Continuous Drain Current (Id) at Tc=25C | 33 A |
| Pulsed Drain Current (Idm) | 110 A (per datasheet pulse curve) |
| On-Resistance Rds(on) max at Vgs=10V | 44 mOhm |
| Gate Threshold Voltage Vgs(th) | 2.0 V to 4.0 V |
| Total Gate Charge Qg | 47.3 nC (typical) |
| Power Dissipation (Pd) at Tc=25C | 130 W |
| Operating Temperature Range | -55 C to +175 C |
| Package | D2PAK (TO-263), surface mount |
| Mounting Type | Surface Mount |
| Packaging | Tape & Reel (13-inch reel) |
| RoHS Status | Compliant (Pb-free) |
| Avalanche Energy Rated | Yes (HEXFET ruggedized) |
IRF540NSTRLPBF Pin Configuration
| Pin 1 | Gate β Gate drive input; threshold 2.0-4.0 V, full enhancement at 10 V |
| Pin 2 | Drain β Drain terminal; internally connected to metal tab |
| Pin 3 | Source β Source terminal; main current return path |
| Pin Tab | Drain (Tab) β Metal tab electrically and thermally connected to drain; primary thermal path |
Safe Operating Area (DC, Tj=25C)
Typical Applications
IRF540NSTRLPBF is suitable for 6 applications: 24V Brushed DC Motor Drive, Solenoid and Relay Driver, Low-Frequency Switching Regulator (Buck/Boost), LED Driver for High-Power Lighting, Battery Protection and Power Path Switch, Uninterruptible Power Supply (UPS) and Inverter.
24V Brushed DC Motor Drive
The IRF540NSTRLPBF is well-suited to 24 V brushed DC motor drive stages in industrial automation and robotics. Its 100 V Vds rating gives comfortable margin above the 24 V nominal bus and the back-EMF spikes of small to medium motors, while the 33 A continuous drain current handles stall currents of fractional-horsepower motors without tripping SOA limits. The 44 mOhm on-resistance keeps conduction loss under 5 W at 10 A motor current, and the HEXFET avalanche-rated body diode absorbs the inductive kick when the motor is suddenly disconnected. Mount the D2PAK tab on at least one square inch of copper pour to keep junction temperature below 125 C at full load.
Recommended
Solenoid and Relay Driver
In solenoid and relay driver circuits, the IRF540NSTRLPBF serves as a low-side switch that energizes inductive loads from a 24 V or 48 V bus. The 47.3 nC total gate charge lets a small logic-level gate driver pull the gate in well under 100 ns, minimizing switching loss. Its ruggedized avalanche rating handles the flyback energy of typical 12 V/24 V solenoids without needing a separate clamp diode in many cases. The D2PAK surface-mount footprint simplifies assembly on a control PCB where space is at a premium and a chassis-mount heatsink is unnecessary.
Recommended
Low-Frequency Switching Regulator (Buck/Boost)
The IRF540NSTRLPBF can serve as the main switch or synchronous rectifier in non-isolated buck or boost converters operating from a 24 V or 48 V input down to 12 V or 5 V outputs at currents up to roughly 20 A. While not as fast as newer 100 V MOSFETs with sub-10 nC gate charge, its low 44 mOhm Rds(on) keeps conduction loss low in slow-switching (<100 kHz) applications where the part still meets efficiency targets. Designers should observe the SOA curve carefully at high duty cycle and high line to ensure junction temperature stays below 150 C, and provide adequate gate drive above 10 V for full enhancement.
Recommended
LED Driver for High-Power Lighting
For high-power LED drivers driving strings of 1-3 A LEDs from a 24 V or 36 V supply, the IRF540NSTRLPBF can be used as a constant-current linear regulator or low-frequency PWM switch. Its 100 V rating and 33 A current capability handle multi-string LED arrays with comfortable headroom, while the low on-resistance minimizes power dissipation when used in linear constant-current mode. A small copper-pour heatsink is generally sufficient for LED driver applications where average current is moderate.
Recommended
Battery Protection and Power Path Switch
In multi-cell Li-ion or lead-acid battery packs with nominal voltages up to 36 V (12 V, 24 V, 36 V systems), the IRF540NSTRLPBF can act as a low-side disconnect or power-path switch. Its 100 V Vds rating exceeds the highest expected pack voltage including transients, and the 44 mOhm Rds(on) contributes less than 100 mV of drop at 2 A continuous discharge current. The ruggedized body diode and avalanche rating protect against inductive kick from connected motors or solenoids, making the part attractive for cordless-tool battery management where a simple fuse replacement is desired.
Recommended
Uninterruptible Power Supply (UPS) and Inverter
In low-frequency line-interactive UPS systems or square-wave inverters running from a 24 V or 48 V battery to drive 120 V/230 V AC loads, the IRF540NSTRLPBF serves as the primary low-side switch on each phase leg. At 50/60 Hz line frequency, switching losses are negligible and the 44 mOhm Rds(on) keeps conduction loss manageable at currents up to 15-20 A continuous. Designers typically use four of these MOSFETs in an H-bridge with an IR2110 or IR2104 high/low-side gate driver. Adequate PCB copper area on the D2PAK tab is essential to maintain thermal margin at peak current.
Recommended
Recommended Products Summary
Engineering reference data for IRF540NSTRLPBF β comparison, design guidance, and compliance information.
Selection Guide
Comparison with Alternatives
| Parameter | This Product | IRF540NSTRRPBF | IRF540NSPBF | IRF2907ZSTRLPBF | STP55NF06L | IRFZ44NSTRLPBF |
|---|---|---|---|---|---|---|
| Brand | Infineon | Infineon | Infineon | Infineon | STMicroelectronics | Infineon |
| Package | D2PAK (TO-263) | D2PAK (TO-263) - same | D2PAK (TO-263) - same | D2PAK (TO-263) - same | D2PAK (TO-263) - same | D2PAK (TO-263) - same |
| Vdss (V) | 100 | 100 | 100 | 75 | 60 | 55 |
| Continuous Id at Tc=25C (A) | 33 | 33 | 33 | 75 | 55 | 49 |
| Rds(on) max at Vgs=10V (mOhm) | 44 | 44 | 44 | 4.5 | 18 | 17.5 |
| Total Gate Charge Qg (nC) | 47.3 | 47.3 | 47.3 | 180 | 60 | 63 |
| Power Dissipation Pd at Tc=25C (W) | 130 | 130 | 130 | 300 | 120 | 94 |
| Operating Temperature Range (C) | -55 to +175 | -55 to +175 | -55 to +175 | -55 to +175 | -55 to +175 | -55 to +175 |
| RoHS / Pb-Free | Yes | Yes | Yes | Yes | Yes | Yes |
Key Differentiators
- Same die with opposite reel orientation enables seamless line balancing (vs IRF540NSTRRPBF)
- 30 percent lower on-resistance than the first-generation IRF540 (vs Original IRF540 (77 mOhm))
- Surface-mount D2PAK footprint versus through-hole TO-220 enables reflow assembly (vs IRF540NPBF (TO-220))
Design Notes
Estimated: at Vds = 24 V, Id = 15 A, and continuous DC operation, conduction loss is I^2 * Rds(on) = 225 * 0.044 = 9.9 W. The D2PAK junction-to-case thermal resistance is approximately 1.0 C/W per Infineon's IRF540N datasheet, but junction-to-ambient on a standard 1 oz FR-4 board with 1 square inch of copper is around 40 C/W. Junction temperature rise = 9.9 W * 40 C/W = 396 C above ambient, which exceeds Tj_max = 175 C. Either increase the copper area to 2-3 square inches or derate the load current to keep Tj below 150 C. A 1 oz 2-square-inch copper pad typically yields RthJA ~ 30 C/W, which would give a 297 C rise - still too high. Plan on a forced-air or a small extruded heatsink bolted to the D2PAK tab for any application dissipating more than 3-4 W continuously.
Layout for a D2PAK power MOSFET should provide a continuous top-layer copper pour that connects the drain tab to the load return or the high-current input rail. Use thermal vias under the tab to bring heat to inner copper planes; a 3x3 grid of 0.3 mm drill / 0.5 mm pad vias filled with solder or thermally conductive epoxy reduces RthJA by roughly 30 percent compared to a single-side pour. The gate trace should be kept short and routed away from the drain switching node to minimize dv/dt-induced gate ringing; a 10-100 ohm gate-source resistor close to the IC pins prevents parasitic turn-on in half-bridge layouts.
Three pitfalls are common with this part. First, driving the gate from a 3.3 V or 5 V microcontroller GPIO leaves the MOSFET in the linear region with Rds(on) several times higher than the 44 mOhm spec, causing severe self-heating - always use a 10 V gate driver. Second, forgetting that the D2PAK metal tab is the drain terminal: if the tab is not soldered (or is left floating in a hand-built prototype), the drain current path is broken and the part will not function. Third, ignoring SOA at high Vds and high duty cycle: the DC SOA curve shows only about 1.3 A is safe at 100 V Vds, so 24 V applications are fine but anything approaching 80 V continuous requires careful thermal derating.
For half-bridge or full-bridge motor drive layouts, keep the high-side and low-side FETs symmetric and minimize the loop area between the high-side drain, the low-side drain, and the bootstrap capacitor. Use a gate driver IC such as the IR2114STRPBF or IRS2011STRPBF placed within 1 cm of the gate pins. The DC-bus decoupling capacitor (typically a 10-100 uF electrolytic in parallel with a 100 nF ceramic) should sit directly between the high-side drain and the low-side source, with the ceramic cap the closest to the FETs.
Compliance Information
Pb-free per the 'PBF' suffix and Infineon product page. Not AEC-Q100 qualified; choose an automotive-grade equivalent such as the IRF540NSTRLPBF-AUMA1 if automotive qualification is required.
