IRF520NPBF vs IRFZ44NPBF Comparison

Detailed side-by-side comparison of IRF520NPBF by Infineon and IRFZ44NPBF by Infineon. Compare key specifications, electrical parameters, packaging, lifecycle status, pricing, and availability to determine the best component for your design requirements.

Specification Comparison

Parameter IRF520NPBF IRFZ44NPBF
Brand Infineon Infineon
Category MOSFETs MOSFETs
Lifecycle Status Active Active
Stock Status In Stock In Stock
Unit Price (USD) $0.66 $0.65
Manufacturer Infineon Technologies β€”
Series HEXFET β€”
FET Type N-Channel N-Channel
Drain-to-Source Voltage (V_DSS) 100 V β€”
Continuous Drain Current (I_D) at Tc 9.7 A β€”
Pulsed Drain Current (I_DM) [DATA_NEEDED: pulsed drain current value] β€”
Gate-to-Source Voltage (V_GS) max Β±20 V β€”
R_DS(on) max at V_GS=10V 200 mOhm β€”
Total Gate Charge (Q_g) 16.7 nC β€”
Power Dissipation (P_D) at Tc 48 W β€”
Operating Temperature Range -55C to +175C β€”
Package TO-220AB (through-hole) TO-220AB (3-pin + tab)
Mounting Type Through Hole Through Hole
MSL Level 1 (unlimited) β€”
RoHS Status Compliant (Pb-free) Compliant
Lead-Free Finish Yes (PBF suffix) β€”
Technology HEXFET (vertical DMOS) HEXFET (Advanced Process)
Drain-to-Source Voltage (VDS) β€” 55 V
Continuous Drain Current (ID) at Tc=25C β€” 49 A
Continuous Drain Current (ID) at Tc=100C β€” [DATA_NEEDED: ID at Tc=100C]
Pulsed Drain Current (IDM) β€” [DATA_NEEDED: pulsed drain current]
Gate-to-Source Voltage (VGS) max β€” +/- 20 V
Static Drain-Source On-Resistance (RDS(on)) at VGS=10V β€” 17.5 mOhm
Total Gate Charge (Qg) β€” 42 nC
Power Dissipation (PD) at Tc=25C β€” 94 W
Thermal Resistance Junction-to-Case (RthJC) β€” 1.0 C/W
Thermal Resistance Junction-to-Ambient (RthJA) β€” 62 C/W
Operating Junction Temperature β€” -55C to +175C
Avalanche Energy Rating (EAS) β€” [DATA_NEEDED: EAS rating]

Datasheets & Resources

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