IRF520NPBF vs IRFZ44NPBF Vergleich

Detaillierter Direktvergleich von IRF520NPBF von Infineon und IRFZ44NPBF von Infineon. Vergleichen Sie die wichtigsten Spezifikationen, elektrischen Parameter, Gehäuse, Lebenszyklusstatus, Preise und Verfügbarkeit, um das beste Bauteil für Ihre Designanforderungen zu ermitteln.

Spezifikationsvergleich

Parameter IRF520NPBF IRFZ44NPBF
Marke Infineon Infineon
Kategorie MOSFETs MOSFETs
Lebenszyklusstatus Aktiv Aktiv
Lagerstatus In Stock In Stock
Stückpreis (USD) $0,66 $0,65
Manufacturer Infineon Technologies —
Series HEXFET —
FET Type N-Channel N-Channel
Drain-to-Source Voltage (V_DSS) 100 V —
Continuous Drain Current (I_D) at Tc 9.7 A —
Pulsed Drain Current (I_DM) [DATA_NEEDED: pulsed drain current value] —
Gate-to-Source Voltage (V_GS) max ±20 V —
R_DS(on) max at V_GS=10V 200 mOhm —
Total Gate Charge (Q_g) 16.7 nC —
Power Dissipation (P_D) at Tc 48 W —
Betriebstemperaturbereich -55C to +175C —
Gehäuse TO-220AB (through-hole) TO-220AB (3-pin + tab)
Montageart Through Hole Through Hole
MSL-Level 1 (unlimited) —
RoHS-Status Compliant (Pb-free) Compliant
Lead-Free Finish Yes (PBF suffix) —
Technology HEXFET (vertical DMOS) HEXFET (Advanced Process)
Drain-to-Source Voltage (VDS) — 55 V
Continuous Drain Current (ID) at Tc=25C — 49 A
Continuous Drain Current (ID) at Tc=100C — [DATA_NEEDED: ID at Tc=100C]
Pulsed Drain Current (IDM) — [DATA_NEEDED: pulsed drain current]
Gate-to-Source Voltage (VGS) max — +/- 20 V
Static Drain-Source On-Resistance (RDS(on)) at VGS=10V — 17.5 mOhm
Total Gate Charge (Qg) — 42 nC
Power Dissipation (PD) at Tc=25C — 94 W
Thermal Resistance Junction-to-Case (RthJC) — 1.0 C/W
Thermal Resistance Junction-to-Ambient (RthJA) — 62 C/W
Betriebs-Sperrschichttemperatur — -55C to +175C
Avalanche Energy Rating (EAS) — [DATA_NEEDED: EAS rating]

Datenblätter & Ressourcen

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