IRF5305STRRPBF vs BSC060P03NS3EGATMA1 Comparison

Detailed side-by-side comparison of IRF5305STRRPBF by Infineon and BSC060P03NS3EGATMA1 by Infineon. Compare key specifications, electrical parameters, packaging, lifecycle status, pricing, and availability to determine the best component for your design requirements.

Infineon
IRF5305STRRPBF IRF5305STRRPBF - P-CH 55V 31A HEXFET MOSFET D2PAK | Infineon

IRF5305STRRPBF - P-CH 55V 31A HEXFET MOSFET D2PAK | Infineon

IRF5305STRRPBF βœ“ Active

Specification Comparison

Parameter IRF5305STRRPBF BSC060P03NS3EGATMA1
Brand Infineon Infineon
Category MOSFETs MOSFETs
Lifecycle Status Active Active
Stock Status In Stock In Stock
Unit Price (USD) $0.62 $0.38
Transistor Type P-Channel MOSFET β€”
Technology HEXFET (Advanced Process) OptiMOSβ„’ P-channel Trench
Drain-to-Source Voltage (VDS) -55 V β€”
Continuous Drain Current (ID) at TC -31 A β€”
Pulsed Drain Current (IDM) [DATA_NEEDED: pulsed drain current] β€”
Gate-to-Source Voltage (VGS) max Β±20 V β€”
RDS(on) max @ VGS=-10V 60 mOhm β€”
Gate Threshold Voltage (VGS(th)) [DATA_NEEDED: VGS(th) typical/min] β€”
Power Dissipation (TC) 110 W β€”
Power Dissipation (TA) 3.8 W β€”
Operating Junction Temperature -55C to +175C β€”
Package D2PAK (TO-263) Surface Mount PG-TDSON-8-1 (SuperSO8 5x6)
Mounting Type Surface Mount Surface Mount
Lead-Free / RoHS Yes (Pb-free suffix) β€”
Packaging Tape & Reel (TR) β€”
Polarity P-Channel P-Channel
Drain-Source Voltage (VDS) β€” -30 V
Continuous Drain Current (Ta) β€” 17.7 A
Continuous Drain Current (Tc) β€” 100 A
On-State Resistance RDS(on) max @ VGS=10V β€” 6 mΞ©
Gate Threshold Voltage VGS(th) typ β€” -2.5 V
Total Gate Charge Qg @ VGS=10V β€” 81 nC
Input Capacitance Ciss β€” 6.02 nF
Output Capacitance Coss β€” 2.81 nF
Reverse Transfer Capacitance Crss β€” 220 pF
Power Dissipation (Ta) β€” 2.5 W
Power Dissipation (Tc) β€” 83 W
Operating Temperature Range β€” -55Β°C to +150Β°C
RoHS Status β€” Compliant

Datasheets & Resources

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