IRF5305STRRPBF - P-CH 55V 31A HEXFET MOSFET D2PAK | Infineon
MPN: IRF5305STRRPBF β Active| Qty | Unit Price | Extended |
|---|---|---|
| 1 | $1.45 | $1.45 |
| 10 | $1.28 | $12.80 |
| 100 | $1.05 | $105.00 |
| 500 | $0.88 | $440.00 |
| 1,000 | $0.74 | $740.00 |
| 2,500 | $0.62 | $1,550.00 |
Drop-in alternatives for IRF5305STRRPBF β same package, pin-to-pin compatible. Different-package parts requiring PCB rework are excluded.
Quick Comparison Tool β Select alternative parts for side-by-side comparison:
IRF5305STRLPBF
β Drop-Inβ In Stock
$0.92 / Unit
View Datasheet βIRF5305SPBF
β Drop-Inπ Reference alternative (not in catalog)
IRFR5305TRLPBF
β Drop-Inβ In Stock
$0.38 / Unit
View Datasheet βIRFR5305TRPBF
β Drop-Inβ In Stock
$0.32 / Unit
View Datasheet βIRF5305PBF
β Drop-Inπ Reference alternative (not in catalog)
NTP85P03P5G
β Drop-Inπ Reference alternative (not in catalog)
IRF5305STRRPBF Maximum Ratings & Electrical Characteristics
| Transistor Type | P-Channel MOSFET |
| Technology | HEXFET (Advanced Process) |
| Drain-to-Source Voltage (VDS) | -55 V |
| Continuous Drain Current (ID) at TC | -31 A |
| Gate-to-Source Voltage (VGS) max | Β±20 V |
| RDS(on) max @ VGS=-10V | 60 mOhm |
| Power Dissipation (TC) | 110 W |
| Power Dissipation (TA) | 3.8 W |
| Operating Junction Temperature | -55C to +175C |
| Package | D2PAK (TO-263) Surface Mount |
| Mounting Type | Surface Mount |
| Lead-Free / RoHS | Yes (Pb-free suffix) |
| Packaging | Tape & Reel (TR) |
| Polarity | P-Channel |
IRF5305STRRPBF Pin Configuration
| Pin 1 | Gate β MOSFET gate - drive to -10V relative to source for full enhancement |
| Pin 2 | Drain β Drain terminal - connected to the load/lower potential in P-channel high-side configuration |
| Pin 3 | Source β Source terminal - connected to the higher potential (battery+) in P-channel high-side configuration |
| Pin Tab | Drain (Tab) β Drain connected to the metal tab/backside - main thermal path, must be soldered to PCB copper pad |
Safe Operating Area (DC)
Typical Applications
IRF5305STRRPBF is suitable for 6 applications: Automotive Reverse-Battery Protection, DC Motor Speed Control (PWM), Synchronous Rectification in Buck Converters, Solenoid and Valve Drivers, Power OR-ing for Redundant Supplies, Uninterruptible Power Supply (UPS) Battery Switching.
Automotive Reverse-Battery Protection
The IRF5305STRRPBF is widely used as the blocking element in 12 V and 24 V automotive reverse-battery protection circuits. With the source tied to the battery positive terminal and the drain to the downstream load, a gate-source short or actively driven -10 V VGS holds the MOSFET off when battery polarity reverses, interrupting the fault current within microseconds and protecting ECUs, infotainment, and ADAS modules from reverse-polarity damage. The 55 V VDS rating provides comfortable headroom against ISO 7637-2 load-dump transients up to 35 V, and the -31 A continuous current comfortably handles 200-300 A engine-cranking surges when pulsed. The D2PAK package mounts directly to chassis ground or to a flooded PCB copper area, providing sufficient thermal dissipation for underhood environments at up to 85C ambient.
Recommended
DC Motor Speed Control (PWM)
The IRF5305STRRPBF drives brushed DC motors in power tools, robotics, and small electric vehicles when configured as a high-side switch with PWM gating at 1-25 kHz. The P-channel polarity allows direct low-side NPN-transistor gate drive from a 5 V or 3.3 V microcontroller without level shifting. The 60 mOhm RDS(on) minimizes I2R conduction loss during the PWM on-time, while the HEXFET die handles repetitive avalanche events from the motor's inductive kickback. Continuous 31 A current supports motors up to roughly 350 W at 12 V, and the 110 W power dissipation envelope with adequate copper heatsinking prevents thermal runaway during stalled-rotor conditions.
Recommended
Synchronous Rectification in Buck Converters
The IRF5305STRRPBF functions as the low-side synchronous rectifier in buck converters where the controller IC cannot drive an N-channel MOSFET efficiently. While N-channel rectifiers require a bootstrap or charge-pump gate-drive supply above the switching node, a P-channel device can be driven directly from the input rail with a simple level-shifter, reducing component count and improving low-duty-cycle efficiency. The 60 mOhm RDS(on) yields synchronous-rectifier conduction loss comparable to a Schottky diode at full load, while eliminating diode reverse-recovery loss. The device is rated for the body-diode forward conduction that occurs during dead-time transitions, simplifying the timing design.
Recommended
Solenoid and Valve Drivers
Industrial solenoid and hydraulic/pneumatic valve drivers benefit from the IRF5305STRRPBF's 31 A continuous current and 55 V VDS rating, which together cover 24 V DC industrial valves and 24 VDC proportional solenoids with substantial margin. The P-channel configuration supports high-side drive with direct microcontroller logic-level gate control. HEXFET avalanche ruggedness absorbs the inductive kickback when the solenoid is de-energized, allowing the use of minimal or no snubber networks. The 175C maximum junction temperature suits enclosed control cabinets where ambient temperatures can reach 70-85C.
Recommended
Power OR-ing for Redundant Supplies
In redundant -48 V telecom or 12 V/24 V industrial power systems, two IRF5305STRRPBF MOSFETs wired with sources facing the load and drains toward each supply implement active OR-ing, replacing Schottky-OR diodes and their associated 0.5-1.0 V forward-voltage drop. With VGS held at 0 V, the MOSFET conducts only in the reverse direction when its supply is active and reverse-biases when the other supply takes over, achieving near-zero power dissipation. The 55 V VDS comfortably covers -48 V telecom rails with adequate transient margin, and the HEXFET process provides tight RDS(on) matching between parallel devices.
Recommended
Uninterruptible Power Supply (UPS) Battery Switching
UPS systems use the IRF5305STRRPBF to switch between mains-powered supply and battery backup, with the P-channel MOSFET configured to disconnect the battery when mains power is present and connect it when mains fails. The 31 A continuous current rating supports battery packs delivering several hundred watts, while the 55 V VDS rating covers 24 V and 36 V battery stacks with safety margin. HEXFET avalanche ruggedness absorbs the inductive transients from inverter transformer leakage during load-step transitions, and the D2PAK package supports the thermal dissipation required for continuous battery-trickle-charge currents.
Recommended
Recommended Products Summary
Engineering reference data for IRF5305STRRPBF β comparison, design guidance, and compliance information.
Selection Guide
Comparison with Alternatives
| Parameter | This Product | IRF5305STRLPBF | IRF5305SPBF | IRFR5305TRLPBF | IRF5305PBF | NTP85P03P5G |
|---|---|---|---|---|---|---|
| Brand | Infineon | Infineon | Infineon | Infineon | Infineon | onsemi |
| Package | D2PAK (TO-263) | D2PAK (TO-263) - same | D2PAK (TO-263) - same | DPAK (TO-252) - different | TO-220 - different | D2PAK (TO-263) - same |
| Polarity | P-Channel | P-Channel | P-Channel | P-Channel | P-Channel | P-Channel |
| VDS max | -55 V | -55 V | -55 V | -55 V | -55 V | -55 V |
| Continuous Drain Current (TC) | -31 A | -31 A | -31 A | -31 A | -31 A | -30 A |
| RDS(on) max @ VGS=-10V | 60 mOhm | 60 mOhm | 60 mOhm | 60 mOhm | 60 mOhm | ~65 mOhm |
| Power Dissipation (TC) | 110 W | 110 W | 110 W | ~50 W | ~110 W | ~110 W |
| Technology | HEXFET | HEXFET | HEXFET | HEXFET | HEXFET | onsemi Trench |
| Lead-Free / RoHS | Yes | Yes | Yes | Yes | Yes | Yes |
Key Differentiators
- Industry-standard drop-in pin-out in D2PAK footprint (vs NTP85P03P5G (onsemi))
- Higher continuous current at TC than competing P-channel parts (vs IRFR5305TRPBF (DPAK))
- Lower on-resistance for the same die size (vs NTP85P03P5G (onsemi))
- Avalanche-rated HEXFET process technology (vs Generic P-channel MOSFETs)
Design Notes
Estimated: At continuous 20 A load with VGS=-10V, conduction loss = I^2 x RDS(on) = 400 x 0.060 = 24 W. With D2PAK thermal resistance (theta_JA) of approximately 40 C/W on 1 square inch of 2-oz copper, the junction temperature rise is 24 x 40 = 960C above ambient, which is impossible - this confirms continuous 20 A requires a much larger copper area or an external heatsink. For 10 A continuous operation the loss is 6 W and the same PCB would see a 240C rise, still excessive. Use the datasheet SOA curves to derate current for your specific PCB layout and ambient temperature.
The D2PAK metal tab is the primary thermal dissipation path and must be soldered to a substantial PCB copper pour. Use a minimum 1 x 1 inch footprint of 2-oz copper (about 70 um thickness) on the top layer, with thermal vias to inner planes for additional spreading. For sustained operation above 15 A, expand the copper area to 2-3 square inches or attach an external TO-220-style clip-on heatsink. Do not rely on the drain pins (pin 2) for thermal dissipation - the tab is the dominant path.
P-channel MOSFETs turn on when VGS is driven below the source voltage - a common mistake is to drive the gate to 0 V (relative to ground) rather than below the source potential, which can leave the device partially enhanced. Always compute VGS with reference to the source pin, not ground. Add a 10 kOhm gate-source resistor to prevent unintended turn-on from dv/dt transients, and place a TVS diode across the gate-source for ESD protection during handling and assembly.
Keep the high-current source and drain loops as short as possible to minimize parasitic inductance that can cause voltage overshoot during switching. For high-side switching with the source at battery+, place the MOSFET's source pin close to the battery positive terminal and the drain pin close to the load. The gate-drive trace should be kept short and routed away from the drain node to avoid dv/dt-induced Miller turn-on. Use a ground-referenced gate driver with a level-shifter for low-side gate control.
Compliance Information
Pb-free suffix (PBF) confirms RoHS compliance per Infineon product page. Not AEC-Q100 qualified - for automotive-grade qualification verify part marking and request PPAP documentation from Infineon.
