IRF640NPBF vs IRF1310NPBF Comparison
Detailed side-by-side comparison of IRF640NPBF by Infineon and IRF1310NPBF by Infineon. Compare key specifications, electrical parameters, packaging, lifecycle status, pricing, and availability to determine the best component for your design requirements.
Specification Comparison
| Parameter | IRF640NPBF | IRF1310NPBF |
|---|---|---|
| Brand | Infineon | Infineon |
| Category | MOSFETs | MOSFETs |
| Lifecycle Status | Active | Active |
| Stock Status | In Stock | In Stock |
| Unit Price (USD) | $0.88 | $0.98 |
| Drain-to-Source Voltage (VDS) | 200 V | — |
| Continuous Drain Current (ID) at Tc | 18 A | — |
| Pulsed Drain Current (IDM) | [DATA_NEEDED: pulsed drain current] | [DATA_NEEDED: IDM value] |
| Gate-to-Source Voltage (VGS) max | ±20 V | — |
| Static Drain-to-Source On-Resistance (RDS(on)) | 150 mOhm max at VGS = 10 V | — |
| Power Dissipation (PD) at Tc=25C | 150 W | — |
| Total Gate Charge (Qg) | 44.7 nC | 73.3 nC |
| Operating Junction Temperature | -55C to +150C | — |
| Technology | HEXFET (5th Generation) | HEXFET |
| Transistor Type | N-Channel Enhancement Mode | — |
| Package | TO-220AB (through-hole, 3-pin) | TO-220AB (through-hole) |
| Mounting Type | Through Hole | Through Hole |
| Avalanche Energy Rated | Yes | — |
| dv/dt Rating | Dynamic, rated | — |
| RoHS Status | Compliant | Compliant (PBF suffix) |
| Lead-Free | Yes (PBF suffix) | — |
| Manufacturer | Infineon (formerly International Rectifier) | — |
| FET Type | — | N-Channel |
| Drain-Source Voltage (VDS) | — | 100 V |
| Continuous Drain Current (ID) at TC=25C | — | 42 A |
| Gate-Source Voltage (VGS) max | — | ±20 V |
| Static Drain-Source On-Resistance (RDS(on)) max at VGS=10V | — | 36 mOhm |
| Gate-Source Charge (Qgs) | — | [DATA_NEEDED: Qgs value] |
| Gate-Drain Charge (Qgd) | — | [DATA_NEEDED: Qgd value] |
| Power Dissipation (PD) at TC=25C | — | 160 W |
| Maximum Junction Temperature | — | 175 C |
| Operating Temperature Range | — | -55 C to +175 C |