IRF640NPBF vs IRF1310NPBF 对比
详细并排对比 IRF640NPBF 出自 Infineon 和 IRF1310NPBF 出自 Infineon。对比关键规格、电气参数、封装、生命周期状态、价格和供货情况，以确定最适合您设计需求的元器件。
规格对比
| 参数 | IRF640NPBF | IRF1310NPBF |
|---|---|---|
| 品牌 | Infineon | Infineon |
| 分类 | MOSFETs | MOSFETs |
| 生命周期状态 | 有效 | 有效 |
| 库存状态 | 有库存 | 有库存 |
| 单价（USD） | $0.88 | $0.98 |
| Drain-to-Source Voltage (VDS) | 200 V | — |
| Continuous Drain Current (ID) at Tc | 18 A | — |
| Pulsed Drain Current (IDM) | [DATA_NEEDED: pulsed drain current] | [DATA_NEEDED: IDM value] |
| Gate-to-Source Voltage (VGS) max | ±20 V | — |
| Static Drain-to-Source On-Resistance (RDS(on)) | 150 mOhm max at VGS = 10 V | — |
| Power Dissipation (PD) at Tc=25C | 150 W | — |
| Total Gate Charge (Qg) | 44.7 nC | 73.3 nC |
| 工作结温 | -55C to +150C | — |
| Technology | HEXFET (5th Generation) | HEXFET |
| 晶体管类型 | N-Channel Enhancement Mode | — |
| 封装 | TO-220AB (through-hole, 3-pin) | TO-220AB (through-hole) |
| 安装类型 | Through Hole | Through Hole |
| Avalanche Energy Rated | Yes | — |
| dv/dt Rating | Dynamic, rated | — |
| RoHS 状态 | Compliant | Compliant (PBF suffix) |
| Lead-Free | Yes (PBF suffix) | — |
| Manufacturer | Infineon (formerly International Rectifier) | — |
| FET Type | — | N-Channel |
| Drain-Source Voltage (VDS) | — | 100 V |
| Continuous Drain Current (ID) at TC=25C | — | 42 A |
| Gate-Source Voltage (VGS) max | — | ±20 V |
| Static Drain-Source On-Resistance (RDS(on)) max at VGS=10V | — | 36 mOhm |
| Gate-Source Charge (Qgs) | — | [DATA_NEEDED: Qgs value] |
| Gate-Drain Charge (Qgd) | — | [DATA_NEEDED: Qgd value] |
| Power Dissipation (PD) at TC=25C | — | 160 W |
| Maximum Junction Temperature | — | 175 C |
| 工作温度范围 | — | -55 C to +175 C |