IRFB3207ZPBF vs IRFB4020PBF Comparison

Detailed side-by-side comparison of IRFB3207ZPBF by Infineon and IRFB4020PBF by Infineon. Compare key specifications, electrical parameters, packaging, lifecycle status, pricing, and availability to determine the best component for your design requirements.

Specification Comparison

Parameter IRFB3207ZPBF IRFB4020PBF
Brand Infineon Infineon
Category MOSFETs MOSFETs
Lifecycle Status Active Active
Stock Status In Stock In Stock
Unit Price (USD) $1.62 $1.38
Manufacturer Infineon Technologies (formerly International Rectifier) β€”
Part Number IRFB3207ZPBF β€”
Series HEXFET β€”
Technology N-Channel MOSFET (HEXFET, Z-suffix ruggedized) IR MOSFET (HEXFET)
Drain-Source Voltage (VDS) 75 V 200 V
Continuous Drain Current (ID) at TC=25C 120 A β€”
Silicon-Limited Drain Current 170 A β€”
Pulsed Drain Current (IDM) [DATA_NEEDED: pulsed drain current value] β€”
On-Resistance RDS(on) typ @ VGS=10V 3.3 mOhm β€”
On-Resistance RDS(on) max @ VGS=10V 4.1 mOhm β€”
Gate Threshold Voltage VGS(th) [DATA_NEEDED: typical VGS(th)] β€”
Total Gate Charge Qg [DATA_NEEDED: total gate charge] β€”
Power Dissition (PD) at TC=25C 300 W β€”
Operating Junction Temperature -55 C to +175 C 175 C (max)
Package TO-220AB (3-lead through-hole) TO-220AB (through-hole)
Mounting Type Through Hole Through Hole
Lead-Free / RoHS Yes (PBF suffix = lead-free) β€”
MSL Level N/A (through-hole) β€”
Avalanche Rated Yes (improved Z-variant ruggedness) β€”
FET Type β€” N-Channel
Continuous Drain Current (ID) at TC β€” 18 A
Power Dissipation (PD) at TC β€” 100 W
RDS(on) Maximum β€” 100 mOhm
Gate-Source Voltage (VGS) Maximum β€” 20 V
Thermal Resistance, Junction-to-Case (RthJC) β€” 1.43 C/W
Pin Count β€” 3 (Gate, Drain, Source)
Lead-Free (PbF suffix) β€” Yes
Market Qualification β€” Consumer
Recommended Use β€” Class-D audio amplifier and high-efficiency switching applications

Datasheets & Resources

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