IRFB3207ZPBF vs IRFB4020PBF Vergleich

Detaillierter Direktvergleich von IRFB3207ZPBF von Infineon und IRFB4020PBF von Infineon. Vergleichen Sie die wichtigsten Spezifikationen, elektrischen Parameter, Gehäuse, Lebenszyklusstatus, Preise und Verfügbarkeit, um das beste Bauteil für Ihre Designanforderungen zu ermitteln.

Spezifikationsvergleich

Parameter IRFB3207ZPBF IRFB4020PBF
Marke Infineon Infineon
Kategorie MOSFETs MOSFETs
Lebenszyklusstatus Aktiv Aktiv
Lagerstatus In Stock In Stock
Stückpreis (USD) $1,62 $1,38
Manufacturer Infineon Technologies (formerly International Rectifier) —
Part Number IRFB3207ZPBF —
Series HEXFET —
Technology N-Channel MOSFET (HEXFET, Z-suffix ruggedized) IR MOSFET (HEXFET)
Drain-Source Voltage (VDS) 75 V 200 V
Continuous Drain Current (ID) at TC=25C 120 A —
Silicon-Limited Drain Current 170 A —
Pulsed Drain Current (IDM) [DATA_NEEDED: pulsed drain current value] —
On-Resistance RDS(on) typ @ VGS=10V 3.3 mOhm —
On-Resistance RDS(on) max @ VGS=10V 4.1 mOhm —
Gate Threshold Voltage VGS(th) [DATA_NEEDED: typical VGS(th)] —
Total Gate Charge Qg [DATA_NEEDED: total gate charge] —
Power Dissition (PD) at TC=25C 300 W —
Betriebs-Sperrschichttemperatur -55 C to +175 C 175 C (max)
Gehäuse TO-220AB (3-lead through-hole) TO-220AB (through-hole)
Montageart Through Hole Through Hole
Lead-Free / RoHS Yes (PBF suffix = lead-free) —
MSL-Level N/A (through-hole) —
Avalanche Rated Yes (improved Z-variant ruggedness) —
FET Type — N-Channel
Continuous Drain Current (ID) at TC — 18 A
Power Dissipation (PD) at TC — 100 W
RDS(on) Maximum — 100 mOhm
Gate-Source Voltage (VGS) Maximum — 20 V
Thermal Resistance, Junction-to-Case (RthJC) — 1.43 C/W
Pin-Anzahl — 3 (Gate, Drain, Source)
Lead-Free (PbF suffix) — Yes
Market Qualification — Consumer
Recommended Use — Class-D audio amplifier and high-efficiency switching applications

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