IRFB3207ZPBF vs IRFB4020PBF 对比
详细并排对比 IRFB3207ZPBF 出自 Infineon 和 IRFB4020PBF 出自 Infineon。对比关键规格、电气参数、封装、生命周期状态、价格和供货情况，以确定最适合您设计需求的元器件。
规格对比
| 参数 | IRFB3207ZPBF | IRFB4020PBF |
|---|---|---|
| 品牌 | Infineon | Infineon |
| 分类 | MOSFETs | MOSFETs |
| 生命周期状态 | 有效 | 有效 |
| 库存状态 | 有库存 | 有库存 |
| 单价（USD） | $1.62 | $1.38 |
| Manufacturer | Infineon Technologies (formerly International Rectifier) | — |
| Part Number | IRFB3207ZPBF | — |
| Series | HEXFET | — |
| Technology | N-Channel MOSFET (HEXFET, Z-suffix ruggedized) | IR MOSFET (HEXFET) |
| Drain-Source Voltage (VDS) | 75 V | 200 V |
| Continuous Drain Current (ID) at TC=25C | 120 A | — |
| Silicon-Limited Drain Current | 170 A | — |
| Pulsed Drain Current (IDM) | [DATA_NEEDED: pulsed drain current value] | — |
| On-Resistance RDS(on) typ @ VGS=10V | 3.3 mOhm | — |
| On-Resistance RDS(on) max @ VGS=10V | 4.1 mOhm | — |
| Gate Threshold Voltage VGS(th) | [DATA_NEEDED: typical VGS(th)] | — |
| Total Gate Charge Qg | [DATA_NEEDED: total gate charge] | — |
| Power Dissition (PD) at TC=25C | 300 W | — |
| 工作结温 | -55 C to +175 C | 175 C (max) |
| 封装 | TO-220AB (3-lead through-hole) | TO-220AB (through-hole) |
| 安装类型 | Through Hole | Through Hole |
| Lead-Free / RoHS | Yes (PBF suffix = lead-free) | — |
| MSL 等级 | N/A (through-hole) | — |
| Avalanche Rated | Yes (improved Z-variant ruggedness) | — |
| FET Type | — | N-Channel |
| Continuous Drain Current (ID) at TC | — | 18 A |
| Power Dissipation (PD) at TC | — | 100 W |
| RDS(on) Maximum | — | 100 mOhm |
| Gate-Source Voltage (VGS) Maximum | — | 20 V |
| Thermal Resistance, Junction-to-Case (RthJC) | — | 1.43 C/W |
| 引脚数量 | — | 3 (Gate, Drain, Source) |
| Lead-Free (PbF suffix) | — | Yes |
| Market Qualification | — | Consumer |
| Recommended Use | — | Class-D audio amplifier and high-efficiency switching applications |