IRFB4110PBF vs AUIRFB8409 Comparison

Detailed side-by-side comparison of IRFB4110PBF by Infineon and AUIRFB8409 by Infineon. Compare key specifications, electrical parameters, packaging, lifecycle status, pricing, and availability to determine the best component for your design requirements.

Specification Comparison

Parameter IRFB4110PBF AUIRFB8409
Brand Infineon Infineon
Category MOSFETs MOSFETs
Lifecycle Status Active Active
Stock Status In Stock In Stock
Unit Price (USD) $1.55 $1.80
Transistor Type N-Channel MOSFET —
Drain-Source Voltage (VDS) 100 V —
Continuous Drain Current (ID) at TC=25°C 120 A (bond-wire limited) —
Pulsed Drain Current (IDM) [DATA_NEEDED: pulsed drain current] —
Gate-Source Voltage (VGS) max ±20 V —
Gate Threshold Voltage (VGS(th)) [DATA_NEEDED: VGS(th) typical/min/max] —
On-Resistance RDS(on) max at VGS=10V 4.5 mΩ —
On-Resistance RDS(on) typ at VGS=10V 3.7 mΩ —
Power Dissipation (PD) at TC=25°C 370 W —
Operating Junction Temperature -55 °C to +175 °C -55 °C to +175 °C
Package TO-220AB (through-hole) TO-220AB (through-hole, 3 leads)
Technology HEXFET (planar DMOS) HEXFET (planar-trench MOSFET)
Mounting Type Through Hole Through Hole
RoHS Status Compliant (Pb-free suffix) [DATA_NEEDED: explicit RoHS statement in datasheet]
Lead-Free Yes (PBF suffix denotes Pb-free) —
FET Type — N-Channel
Drain-Source Voltage (V<sub>DS</sub>) — 40 V
Continuous Drain Current (I<sub>D</sub>, T<sub>C</sub>=25°C) — 195 A
Pulsed Drain Current — [DATA_NEEDED: pulsed ID value]
R<sub>DS(on)</sub> max (V<sub>GS</sub>=10V) — 1.2 mΩ (Infineon page) / 0.97 mΩ (Mouser title)
Gate Threshold Voltage (V<sub>GS(th)</sub>) — [DATA_NEEDED: Vgs(th) typical]
Maximum Power Dissipation (P<sub>D</sub>, T<sub>C</sub>=25°C) — 375 W
Maximum Junction Temperature — 175 °C
Qualification — Automotive Grade (AEC-Q101 family)
Manufacturer — Infineon Technologies (formerly International Rectifier)

Datasheets & Resources

Browse All Products Create BOM Request Quote