IRFB4110PBF vs AUIRFB8409 对比
详细并排对比 IRFB4110PBF 出自 Infineon 和 AUIRFB8409 出自 Infineon。对比关键规格、电气参数、封装、生命周期状态、价格和供货情况，以确定最适合您设计需求的元器件。
规格对比
| 参数 | IRFB4110PBF | AUIRFB8409 |
|---|---|---|
| 品牌 | Infineon | Infineon |
| 分类 | MOSFETs | MOSFETs |
| 生命周期状态 | 有效 | 有效 |
| 库存状态 | 有库存 | 有库存 |
| 单价（USD） | $1.55 | $1.80 |
| 晶体管类型 | N-Channel MOSFET | — |
| Drain-Source Voltage (VDS) | 100 V | — |
| Continuous Drain Current (ID) at TC=25°C | 120 A (bond-wire limited) | — |
| Pulsed Drain Current (IDM) | [DATA_NEEDED: pulsed drain current] | — |
| Gate-Source Voltage (VGS) max | ±20 V | — |
| Gate Threshold Voltage (VGS(th)) | [DATA_NEEDED: VGS(th) typical/min/max] | — |
| On-Resistance RDS(on) max at VGS=10V | 4.5 mΩ | — |
| On-Resistance RDS(on) typ at VGS=10V | 3.7 mΩ | — |
| Power Dissipation (PD) at TC=25°C | 370 W | — |
| 工作结温 | -55 °C to +175 °C | -55 °C to +175 °C |
| 封装 | TO-220AB (through-hole) | TO-220AB (through-hole, 3 leads) |
| Technology | HEXFET (planar DMOS) | HEXFET (planar-trench MOSFET) |
| 安装类型 | Through Hole | Through Hole |
| RoHS 状态 | Compliant (Pb-free suffix) | [DATA_NEEDED: explicit RoHS statement in datasheet] |
| Lead-Free | Yes (PBF suffix denotes Pb-free) | — |
| FET Type | — | N-Channel |
| Drain-Source Voltage (V<sub>DS</sub>) | — | 40 V |
| Continuous Drain Current (I<sub>D</sub>, T<sub>C</sub>=25°C) | — | 195 A |
| 脉冲漏极电流 | — | [DATA_NEEDED: pulsed ID value] |
| R<sub>DS(on)</sub> max (V<sub>GS</sub>=10V) | — | 1.2 mΩ (Infineon page) / 0.97 mΩ (Mouser title) |
| Gate Threshold Voltage (V<sub>GS(th)</sub>) | — | [DATA_NEEDED: Vgs(th) typical] |
| Maximum Power Dissipation (P<sub>D</sub>, T<sub>C</sub>=25°C) | — | 375 W |
| Maximum Junction Temperature | — | 175 °C |
| Qualification | — | Automotive Grade (AEC-Q101 family) |
| Manufacturer | — | Infineon Technologies (formerly International Rectifier) |