IRFB4110PBF vs AUIRFB8409 比較
詳細な並列比較: IRFB4110PBF メーカー: Infineon および AUIRFB8409 メーカー: Infineon。主要仕様、電気的特性、パッケージ、ライフサイクルステータス、価格、在庫状況を比較して、設計要件に最適な部品を判断してください。
仕様比較
| パラメータ | IRFB4110PBF | AUIRFB8409 |
|---|---|---|
| ブランド | Infineon | Infineon |
| カテゴリ | MOSFETs | MOSFETs |
| ライフサイクル状態 | 有効 | 有効 |
| 在庫状況 | In Stock | In Stock |
| 単価（USD） | $1.55 | $1.80 |
| トランジスタタイプ | N-Channel MOSFET | — |
| Drain-Source Voltage (VDS) | 100 V | — |
| Continuous Drain Current (ID) at TC=25°C | 120 A (bond-wire limited) | — |
| Pulsed Drain Current (IDM) | [DATA_NEEDED: pulsed drain current] | — |
| Gate-Source Voltage (VGS) max | ±20 V | — |
| Gate Threshold Voltage (VGS(th)) | [DATA_NEEDED: VGS(th) typical/min/max] | — |
| On-Resistance RDS(on) max at VGS=10V | 4.5 mΩ | — |
| On-Resistance RDS(on) typ at VGS=10V | 3.7 mΩ | — |
| Power Dissipation (PD) at TC=25°C | 370 W | — |
| 動作接合温度 | -55 °C to +175 °C | -55 °C to +175 °C |
| パッケージ | TO-220AB (through-hole) | TO-220AB (through-hole, 3 leads) |
| Technology | HEXFET (planar DMOS) | HEXFET (planar-trench MOSFET) |
| 実装タイプ | Through Hole | Through Hole |
| RoHS ステータス | Compliant (Pb-free suffix) | [DATA_NEEDED: explicit RoHS statement in datasheet] |
| Lead-Free | Yes (PBF suffix denotes Pb-free) | — |
| FET Type | — | N-Channel |
| Drain-Source Voltage (V<sub>DS</sub>) | — | 40 V |
| Continuous Drain Current (I<sub>D</sub>, T<sub>C</sub>=25°C) | — | 195 A |
| パルスドレイン電流 | — | [DATA_NEEDED: pulsed ID value] |
| R<sub>DS(on)</sub> max (V<sub>GS</sub>=10V) | — | 1.2 mΩ (Infineon page) / 0.97 mΩ (Mouser title) |
| Gate Threshold Voltage (V<sub>GS(th)</sub>) | — | [DATA_NEEDED: Vgs(th) typical] |
| Maximum Power Dissipation (P<sub>D</sub>, T<sub>C</sub>=25°C) | — | 375 W |
| Maximum Junction Temperature | — | 175 °C |
| Qualification | — | Automotive Grade (AEC-Q101 family) |
| Manufacturer | — | Infineon Technologies (formerly International Rectifier) |