IRFB7545PBF vs IRFB3207ZPBF Comparison
Detailed side-by-side comparison of IRFB7545PBF by Infineon and IRFB3207ZPBF by Infineon. Compare key specifications, electrical parameters, packaging, lifecycle status, pricing, and availability to determine the best component for your design requirements.
Specification Comparison
| Parameter | IRFB7545PBF | IRFB3207ZPBF |
|---|---|---|
| Brand | Infineon | Infineon |
| Category | MOSFETs | MOSFETs |
| Lifecycle Status | Active | Active |
| Stock Status | In Stock | In Stock |
| Unit Price (USD) | $0.95 | $1.62 |
| Manufacturer | Infineon Technologies | Infineon Technologies (formerly International Rectifier) |
| Part Number | IRFB7545PBF | IRFB3207ZPBF |
| Technology | StrongIRFETβ’ (HEXFET, N-Channel) | N-Channel MOSFET (HEXFET, Z-suffix ruggedized) |
| Polarity | N-Channel | β |
| VDS (Drain-Source Voltage) max | 60 V | β |
| VGS (Gate-Source Voltage) max | Β±20 V | β |
| RDS(on) max at VGS=10V | 5.9 mOhm | β |
| Continuous Drain Current (ID) at Tc=25C | 95 A | β |
| Pulsed Drain Current (IDM) | 380 A | [DATA_NEEDED: pulsed drain current value] |
| Single-Pulse Avalanche Current (IAS) | 57 A | β |
| Power Dissipation (PD) at Tc=25C | 125 W | β |
| Thermal Resistance Junction-to-Case (RthJC) | 1.0 C/W | β |
| Operating Junction Temperature | -55C to +175C | -55 C to +175 C |
| Package | TO-220AB (Through-Hole) | TO-220AB (3-lead through-hole) |
| Mounting Type | Through Hole (THT) | Through Hole |
| Lead-Free / RoHS | Yes (Lead-Free, PBF suffix) | Yes (PBF suffix = lead-free) |
| MSL Level | N/A (Through-Hole) | N/A (through-hole) |
| Gate Drive Voltage (typical) | 10 V | β |
| Avalanche Energy Rated | Yes | β |
| Series | β | HEXFET |
| Drain-Source Voltage (VDS) | β | 75 V |
| Continuous Drain Current (ID) at TC=25C | β | 120 A |
| Silicon-Limited Drain Current | β | 170 A |
| On-Resistance RDS(on) typ @ VGS=10V | β | 3.3 mOhm |
| On-Resistance RDS(on) max @ VGS=10V | β | 4.1 mOhm |
| Gate Threshold Voltage VGS(th) | β | [DATA_NEEDED: typical VGS(th)] |
| Total Gate Charge Qg | β | [DATA_NEEDED: total gate charge] |
| Power Dissition (PD) at TC=25C | β | 300 W |
| Avalanche Rated | β | Yes (improved Z-variant ruggedness) |