IRFB7545PBF vs IRFB3207ZPBF 비교
다음의 상세 나란히 비교: IRFB7545PBF 제조: Infineon 및 IRFB3207ZPBF 제조: Infineon. 주요 사양, 전기적 파라미터, 패키징, 수명 주기 상태, 가격 및 재고를 비교하여 설계 요구 사항에 가장 적합한 부품을 결정하십시오.
사양 비교
| 파라미터 | IRFB7545PBF | IRFB3207ZPBF |
|---|---|---|
| 브랜드 | Infineon | Infineon |
| 카테고리 | MOSFETs | MOSFETs |
| 수명 주기 상태 | 활성 | 활성 |
| 재고 상태 | In Stock | In Stock |
| 단가 (USD) | $0.95 | $1.62 |
| Manufacturer | Infineon Technologies | Infineon Technologies (formerly International Rectifier) |
| Part Number | IRFB7545PBF | IRFB3207ZPBF |
| Technology | StrongIRFET™ (HEXFET, N-Channel) | N-Channel MOSFET (HEXFET, Z-suffix ruggedized) |
| Polarity | N-Channel | — |
| VDS (Drain-Source Voltage) max | 60 V | — |
| VGS (Gate-Source Voltage) max | ±20 V | — |
| RDS(on) max at VGS=10V | 5.9 mOhm | — |
| Continuous Drain Current (ID) at Tc=25C | 95 A | — |
| Pulsed Drain Current (IDM) | 380 A | [DATA_NEEDED: pulsed drain current value] |
| Single-Pulse Avalanche Current (IAS) | 57 A | — |
| Power Dissipation (PD) at Tc=25C | 125 W | — |
| Thermal Resistance Junction-to-Case (RthJC) | 1.0 C/W | — |
| 동작 접합 온도 | -55C to +175C | -55 C to +175 C |
| 패키지 | TO-220AB (Through-Hole) | TO-220AB (3-lead through-hole) |
| 실장 유형 | Through Hole (THT) | Through Hole |
| Lead-Free / RoHS | Yes (Lead-Free, PBF suffix) | Yes (PBF suffix = lead-free) |
| MSL 레벨 | N/A (Through-Hole) | N/A (through-hole) |
| Gate Drive Voltage (typical) | 10 V | — |
| Avalanche Energy Rated | Yes | — |
| Series | — | HEXFET |
| Drain-Source Voltage (VDS) | — | 75 V |
| Continuous Drain Current (ID) at TC=25C | — | 120 A |
| Silicon-Limited Drain Current | — | 170 A |
| On-Resistance RDS(on) typ @ VGS=10V | — | 3.3 mOhm |
| On-Resistance RDS(on) max @ VGS=10V | — | 4.1 mOhm |
| Gate Threshold Voltage VGS(th) | — | [DATA_NEEDED: typical VGS(th)] |
| Total Gate Charge Qg | — | [DATA_NEEDED: total gate charge] |
| Power Dissition (PD) at TC=25C | — | 300 W |
| Avalanche Rated | — | Yes (improved Z-variant ruggedness) |