IRFB7545PBF vs IRFH5015TRPBF Comparison

Detailed side-by-side comparison of IRFB7545PBF by Infineon and IRFH5015TRPBF by Infineon. Compare key specifications, electrical parameters, packaging, lifecycle status, pricing, and availability to determine the best component for your design requirements.

Infineon
IRFH5015TRPBF

IRFH5015TRPBF - 150V N-Ch 31mOhm HEXFET MOSFET | Infineon

IRFH5015TRPBF βœ“ Active

Specification Comparison

Parameter IRFB7545PBF IRFH5015TRPBF
Brand Infineon Infineon
Category MOSFETs MOSFETs
Lifecycle Status Active Active
Stock Status In Stock In Stock
Unit Price (USD) $0.95 $0.62
Manufacturer Infineon Technologies β€”
Part Number IRFB7545PBF β€”
Technology StrongIRFETβ„’ (HEXFET, N-Channel) IR MOSFET (HEXFET)
Polarity N-Channel β€”
VDS (Drain-Source Voltage) max 60 V β€”
VGS (Gate-Source Voltage) max Β±20 V β€”
RDS(on) max at VGS=10V 5.9 mOhm β€”
Continuous Drain Current (ID) at Tc=25C 95 A β€”
Pulsed Drain Current (IDM) 380 A β€”
Single-Pulse Avalanche Current (IAS) 57 A β€”
Power Dissipation (PD) at Tc=25C 125 W β€”
Thermal Resistance Junction-to-Case (RthJC) 1.0 C/W β€”
Operating Junction Temperature -55C to +175C β€”
Package TO-220AB (Through-Hole) 8-PQFN (5x6) SuperSO8
Mounting Type Through Hole (THT) Surface Mount
Lead-Free / RoHS Yes (Lead-Free, PBF suffix) β€”
MSL Level N/A (Through-Hole) β€”
Gate Drive Voltage (typical) 10 V β€”
Avalanche Energy Rated Yes β€”
FET Type β€” N-Channel
Drain-Source Voltage (VDS) β€” 150 V
Continuous Drain Current (ID) at TA=25C β€” 10 A
Continuous Drain Current (ID) at TC=25C β€” 56 A
On-Resistance (RDS(on)) max β€” 31 mOhm
Total Gate Charge (Qg) β€” 33 nC
Power Dissipation (TA=25C) β€” 3.6 W
Power Dissipation (TC=25C) β€” 156 W
Gate Drive Voltage (VGS recommended) β€” 10 V
Configuration β€” Single with built-in body diode
Operating Temperature β€” -55C to +150C (TJ max)
RoHS Status β€” Compliant

Datasheets & Resources

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